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The invention is directed to mixtures of polysilanes macroscopically solid at ambient temperature wherein the individual components of the composition SinH2n and/or SinH2n+2 of which decompose before they are boiling at an applied process pressure and which are produced from the hydrogenation of pla

The invention is directed to mixtures of polysilanes macroscopically solid at ambient temperature wherein the individual components of the composition SinH2n and/or SinH2n+2 of which decompose before they are boiling at an applied process pressure and which are produced from the hydrogenation of plasmachemically generated largely chlorinated polysilane mixtures. These mixtures of polysilanes are especially suited to be applied onto surfaces as solutions or dispersions and to obtain silicon-based structures or layers in subsequent process steps. Furthermore, they are especially safe in handling and can be additionally made up into transport forms in suitable transport containers.

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1. A process for producing solid mixtures of polysilanes comprising the steps of: producing largely halogenated, polysilane mixtures by plasmachemical methods, and hydrogenating said largely halogenated polysilane mixtures. 2. The process for producing solid mixtures of polysilanes according to clai

1. A process for producing solid mixtures of polysilanes comprising the steps of: producing largely halogenated, polysilane mixtures by plasmachemical methods, and hydrogenating said largely halogenated polysilane mixtures. 2. The process for producing solid mixtures of polysilanes according to claim 1 wherein the used mixtures of largely halogenated polysilanes are hydrogenated without selection of compounds with suitable molecular masses from the mixtures. 3. The process for producing solid mixtures of polysilanes according to claim 1 wherein solid components of the composition SinH2n or SinH2n+2 with n>10, are separated at ambient temperature from the polysilane mixtures obtained by the hydrogenation. 4. The process for producing solid mixtures of polysilanes according to claim 1 wherein the largely halogenated polysilane mixtures produced by plasmachemical methods are fractionated before the hydrogenation so that the hydrogenation of the used fractions results in polysilanes solid at ambient temperature. 5. The process for producing solid mixtures of polysilanes according to claim 4 wherein the largely halogenated polysilane mixtures produced by plasmachemical methods are fractionated before the hydrogenation so that the hydrogenation of the used fractions results exclusively in polysilanes solid at ambient temperature. 6. The process for producing solid mixtures of polysilanes according to claim 1 wherein the hydrogenation of the used largely halogenated polysilane mixtures is carried out by metal hydrides or metalloid hydrides. 7. The process for producing solid mixtures of polysilanes according to claim 1 wherein the hydrogenation of the used largely halogenated polysilane mixtures is carried out by a catalytic method. 8. The process for producing solid mixtures of polysilanes according to claim 1 wherein compounds of further elements are mixed with the solid polysilane mixtures for the subsequent production of silicon with defined electronic characteristics. 9. The process for producing solid mixtures of polysilanes according to claim 8 wherein the admixed compounds contain at least one element of the main groups III or V of the periodic system. 10. The process for producing solid mixtures of polysilanes according to claim 8 wherein the solid polysilane mixtures in the form of solutions or dispersions are mixed with compounds of further elements for the subsequent production of silicon with defined electronic characteristics. 11. The process for producing solid mixtures of polysilanes according to claim 10 wherein the admixed compounds contain at least one element of the main groups III or V of the periodic system. 12. The process for producing solid mixtures of polysilanes according to claim 1 wherein formed parts are produced from the polysilane mixtures. 13. The process for producing solid mixtures of polysilanes according to claim 12 wherein the formed parts are produced through melting of portions of the polysilane mixtures. 14. The process for producing solid mixtures of polysilanes according to claim 12 wherein formed parts of polysilane mixtures are produced with the addition of additives. 15. The process for producing solid mixtures of polysilanes according to claim 14 wherein the additives improve the coherence of the formed parts. 16. The process for producing solid mixtures of polysilanes according to claim 14 wherein the additives reduce the oxidation sensitivity of the formed parts. 17. The process for producing solid mixtures of polysilanes according to claim 12 wherein the formed parts are coated with a material layer after their production. 18. The process for producing solid mixtures of polysilanes according to claim 17 wherein the material layer improves the coherence of the formed parts. 19. The process for producing solid mixtures of polysilanes according to claim 17 wherein the material layer improves the abrasion of the formed parts. 20. The process for producing solid mixtures of polysilanes according to claim 17 wherein the material layer reduces the oxidation sensitivity of the formed parts. 21. The process for producing solid mixtures of polysilanes according to claim 1 wherein these mixtures, prior to their use, can be stored and transported in light-proof transport containers applied with inert gas. 22. The process for producing solid mixtures of polysilanes according to claim 21 wherein the transport containers have discharge means by means of which the mixture can be supplied to further processing or to a hydrogen reactor. 23. A process for preparing a solid mixture of polysilanes, which comprises the steps of: (a) generating a mixture of halogenated polysilanes by reaction of SiX4, wherein X is F, Cl, Br or I, with H2 through a plasmachemical method; and(b) hydrogenating the mixture of halogenated polysilanes generated according to step (a) to obtain the solid mixture of polysilanes. 24. The process defined in claim 23, wherein following step (b), solid components of the composition SinH2n or SinH2n+2 with n>10, are separated at ambient temperature from the polysilane mixtures obtained by the hydrogenation. 25. The process defined in claim 23, wherein prior to step (b) the polysilane mixtures produced by plasmachemical methods are fractionated before the hydrogenation so that the hydrogenation of the used fractions results in polysilane solid at room temperature. 26. The process defined in claim 23, wherein according to step (b), the hydrogenation of the used polysilane mixtures is carried out by metal hydrides or metalloid hydrides. 27. The process defined in claim 23 wherein following step (b), compounds of further elements are mixed with the solid polysilane mixtures for the subsequent production of silicon with defined electrostatic characteristics. 28. The process defined in claim 27 wherein the admixed compounds of further elements contain at least one element of Groups III or Group V of the periodic system. 29. A method for preparing a formed part comprising a solid mixture of polysilanes, which comprises the steps of: (a) generating a mixture of halogenated polysilanes by reaction of SiX4, wherein X is F, Cl, Br or I, with H2 through a plasmachemical method;(b) hydrogenating the mixture of halogenated polysilanes generated according to step (a) to obtain the solid mixture of polysilanes; and(c) preparing a formed part of the solid mixture of polysilanes obtained according to step (b). 30. The method for preparing a formed part comprising a solid mixture of polysilanes defined in claim 29, further comprising the step of coating the formed part with a material layer. 31. A method for producing a solution or a dispersion of a solid mixture of polysilanes on a substrate, which comprises the steps of: (a) generating a mixture of halogenated polysilanes by reaction of SiX4, wherein X is F, Cl, Br or I, with H2 through a plasmachemical method;(b) hydrogenating the mixture of halogenated polysilanes generated according to step (a) to obtain the solid mixture of polysilanes; and(c) dissolving or dispersing the solid mixture of polysilanes in a solvent. 32. A method of depositing a polysilane layer on a substrate which comprises the steps of: (a) generating a mixture of halogenated polysilanes by reaction of SiX4, wherein X is F, Cl, Br or I, with H2 through a plasmachemical method;(b) hydrogenating the mixture of halogenated polysilanes generated according to step (a) to obtain the solid mixture of polysilanes;(c) dissolving or dispersing the solid mixture of polysilanes in a solvent; and(d) applying the solution or dispersion of the solid mixture of polysilanes in a solvent to a substrate to form a layer on the substrate.