초록 ▼

A method for removing the edge bead from a substrate by applying an impinging stream of a medium that is not a solvent for the material to be removed. The medium is applied to the periphery of the substrate with sufficient force to remove the material. Also an apparatus to perform the inventive meth

A method for removing the edge bead from a substrate by applying an impinging stream of a medium that is not a solvent for the material to be removed. The medium is applied to the periphery of the substrate with sufficient force to remove the material. Also an apparatus to perform the inventive method.

대표청구항 ▼

1. A method of non-chemically removing an edge bead of a material layer from a semiconductor substrate having opposing first and second surfaces and an outer edge surface therebetween, said material layer and the edge bead overlying and situated on the first surface of the semiconductor substrate, s

1. A method of non-chemically removing an edge bead of a material layer from a semiconductor substrate having opposing first and second surfaces and an outer edge surface therebetween, said material layer and the edge bead overlying and situated on the first surface of the semiconductor substrate, said edge bead situated proximate to the outer edge surface, the method comprising: while spinning the semiconductor substrate, non-chemically removing said edge bead without applying a liquid solvent by contacting said edge bead of the material layer with a stream consisting of a non-dissolving, non-aerosol gas medium under pressure directed toward said edge bead to impinge upon and non-chemically remove said edge bead. 2. The method of claim 1, wherein the material layer comprises a photoresist material. 3. The method of claim 1, wherein the material layer comprises a polymeric material. 4. A method of non-chemically removing an edge bead of a material layer from a semiconductor substrate having opposing first and second surfaces and an outer edge surface therebetween, said material layer and the edge bead overlying and situated on the first surface of the semiconductor substrate, said edge bead situated proximate to the outer edge surface, the method, comprising: while spinning the semiconductor substrate, non-chemically removing said edge bead without applying a liquid solvent by contacting said edge bead of the material layer with a stream consisting of a non-dissolving, non-aerosol gas medium under pressure directed toward said edge bead to impinge and non-chemically remove said edge bead, wherein the gas medium is a gas selected from the group consisting of air, a noble gas and nitrogen gas. 5. A method of non-chemically removing an edge bead of a material layer from a semiconductor substrate having opposing first and second surfaces and an outer edge surface therebetween, said material layer and the edge bead overlying and situated on the first surface of the semiconductor substrate and said edge bead situated proximate to the outer edge, the method comprising: while spinning the semiconductor substrate, non-chemically removing said edge bead without applying a liquid solvent by contacting said edge bead of the material layer with a stream consisting of a non-dissolving, non-aerosol gas under pressure directed toward said edge bead to impinge upon and non-chemically remove said edge bead. 6. A method of non-chemically removing an edge bead of a material layer from a semiconductor substrate having opposing first and second surfaces and an outer edge surface therebetween, said material layer and the edge bead overlying and situated on the first surface of the semiconductor substrate, said edge bead situated proximate to the outer edge, the method comprising: while spinning the semiconductor substrate, non-chemically removing said edge bead without applying a liquid solvent by contacting said edge bead of the material layer with a stream consisting of a non-dissolving, non-aerosol gas medium under pressure directed toward said edge bead to impinge upon and non-chemically remove said edge bead and expose the first surface of the semiconductor substrate. 7. A method of non-chemically removing an edge bead of a material layer from a semiconductor substrate having opposing first and second surfaces and an outer edge surface therebetween, said material layer and the edge bead overlying and situated on the first surface of the semiconductor substrate, said edge bead situated proximate to the outer edge, the method comprising: while spinning the semiconductor substrate, non-chemically removing said edge bead without applying a liquid solvent by contacting said edge bead of the material layer with a stream consisting of a non-dissolving, non-aerosol gas medium under pressure directed toward said edge bead to impinge upon and non-chemically remove said edge bead and expose said first surface and outer edge of the semiconductor substrate. 8. A method of non-chemically removing an edge bead of a material layer from a semiconductor substrate having opposing first and second surfaces and an outer edge surface therebetween, said material layer and the edge bead overlying and situated on the first surface of the semiconductor substrate, said edge bead situated proximate to the outer edge, the method comprising: while spinning the semiconductor substrate, non-chemically removing said edge bead without applying a liquid solvent by contacting said edge bead of the material layer with a stream consisting of a non-dissolving, non-aerosol gas medium under pressure directed toward said edge bead to impinge upon and non-chemically remove material from said edge bead. 9. A method of non-chemically removing a portion of a material layer overlying and situated on a first surface of a semiconductor substrate having opposing first and second surfaces and an outer edge surface therebetween, comprising: while spinning the semiconductor substrate, non-chemically removing said portion of the material layer without applying a liquid solvent by applying a stream consisting of a non-dissolving, non-aerosol gas medium under pressure directed toward the material layer proximate to said outer edge surface of the substrate to impinge upon said material layer and non-chemically remove a thickness of said material layer. 10. The method of claim 9, wherein the gas medium is a gas selected from the group consisting of air, a noble gas and nitrogen gas. 11. A method of non-chemically removing a portion of a material layer overlying and situated on a surface of a semiconductor substrate and proximate to an edge surface of the semiconductor substrate, comprising: while spinning the semiconductor substrate, non-chemically removing said portion of the material layer without applying a liquid solvent by applying a stream consisting of a non-dissolving, non-aerosol gas medium under pressure directed toward the material layer to impinge upon said material layer and non-chemically remove a thickness of said material layer. 12. A method of non-chemically removing an undesired thickness of a material layer overlying and situated on a surface and proximate to an outer edge surface of a semiconductor substrate having opposing first and second surfaces and said outer edge surface therebetween, the method comprising: while spinning the semiconductor substrate, non-chemically removing said thickness of said material layer without applying a liquid solvent by contacting the material layer with a stream consisting of a non-dissolving, non-aerosol gas medium under pressure directed toward said material layer to impinge upon said material layer and non-chemically remove said thickness of the material layer. 13. A method of non-chemically removing a thickness of an edge bead of a material layer overlying and situated on a first surface and proximate to an outer edge surface of a semiconductor substrate having opposing first and second surfaces and said outer edge surface therebetween, the method comprising: while spinning the semiconductor substrate, non-chemically removing said thickness of said edge bead without applying a liquid solvent by applying a stream consisting of a non-dissolving, non-aerosol gas medium under pressure directed toward said edge bead to impinge upon the edge bead to non-chemically remove said thickness of said edge bead. 14. A method of non-chemically removing an edge bead of a material layer overlying and situated on a surface of a semiconductor substrate, the edge bead on said surface and proximate to an outer edge surface of the semiconductor substrate, the method comprising: while spinning the semiconductor substrate, non-chemically removing said edge bead without applying a liquid solvent by contacting said edge bead of the material layer with a stream consisting of a non-dissolving, non-aerosol gas medium under pressure directed toward said edge bead to impinge upon and non-chemically remove said edge bead and expose the substrate; andapplying a cleaning solution to remove residue from the semiconductor substrate. 15. The method of claim 14, wherein the cleaning solution is chemically reactive with said residue. 16. A method of non-chemically removing an edge bead of a material layer overlying and situated on a surface of a semiconductor substrate, the edge bead overlying and on said surface and proximate to an outer edge surface of the semiconductor substrate, the method comprising: while spinning the semiconductor substrate, non-chemically removing said edge bead without applying a liquid solvent by contacting said edge bead of the material layer with a stream consisting of a non-dissolving, non-aerosol gas medium under pressure directed toward said edge bead to impinge upon and non-chemically remove said edge bead and expose the substrate; andapplying a wet cleaning to remove residue from the semiconductor substrate. 17. A method of non-chemically removing an edge bead of a material layer overlying and situated on a surface of a semiconductor substrate, the edge bead on said surface and proximate to an outer edge surface of the semiconductor substrate, the method comprising: while spinning the semiconductor substrate, non-chemically removing said edge bead without applying a liquid solvent by contacting said edge bead of the material layer with a stream consisting of a non-dissolving, non-aerosol gas medium under pressure directed toward said edge bead to impinge upon and non-chemically remove said edge bead and expose the substrate; andapplying a cleaning solution to remove residue from the exposed semiconductor substrate and a backside of the semiconductor substrate. 18. A method of non-chemically removing a portion of a material layer overlying and situated on a first surface of a semiconductor substrate, comprising: while spinning the semiconductor substrate, non-chemically removing said portion of the material layer without applying a liquid solvent by applying a stream consisting of a non-dissolving, non-aerosol gas medium under pressure directed toward said material layer proximate to an outer edge surface of the substrate to impinge upon said material layer and non-chemically remove a thickness of said material layer and expose the first surface of the substrate; andapplying a cleaning solution to remove residue from the exposed first surface of the semiconductor substrate and an opposing second surface of the semiconductor substrate. 19. A method of non-chemically removing a thickness of an edge bead of a material layer overlying and situated on a surface of a semiconductor substrate proximal to an outer edge of the semiconductor substrate, comprising: while spinning the semiconductor substrate, non-chemically removing said thickness of said edge bead without applying a liquid solvent by applying a stream consisting of a non-dissolving, non-aerosol gas medium under pressure directed toward said edge bead to impinge upon the edge bead to non-chemically remove said thickness of said edge bead and expose the semiconductor substrate; andapplying a cleaning solution to remove residue from the exposed semiconductor substrate and a backside of the semiconductor substrate.