Near-infrared photodetectors, image sensors employing the same, and methods of manufacturing the same
원문보기
IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
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출원번호 |
US-0656684
(2010-02-12)
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등록번호 |
US-8193497
(2012-06-05)
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발명자
/ 주소 |
- Park, Yoon-dong
- Miller, David Andrew Barclay
- Jin, Young-gu
- Joe, In-sung
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출원인 / 주소 |
- Samsung Electronics Co., Ltd.
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대리인 / 주소 |
Harness, Dickey & Pierce, P.L.C.
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인용정보 |
피인용 횟수 :
2 인용 특허 :
3 |
초록
▼
Silicon photodetectors using near-infrared dipole antennas. The photodetectors include a silicon region formed on a semiconductor substrate, dipole antenna forming two arms that are spaced apart with the silicon region therebetween and inducing an electromagnetic wave signal of incident light, and e
Silicon photodetectors using near-infrared dipole antennas. The photodetectors include a silicon region formed on a semiconductor substrate, dipole antenna forming two arms that are spaced apart with the silicon region therebetween and inducing an electromagnetic wave signal of incident light, and electrodes disposed in a vertical direction of the dipole antenna and spaced apart with the silicon region therebetween, where a critical bias voltage is applied to the electrodes to induce an avalanche gain operation in the silicon region.
대표청구항
▼
1. A photodetector, comprising: a substrate;a semiconductor region on the substrate;an antenna including first and second arms on the substrate, the semiconductor region between the arms; andfirst and second electrodes on the substrate, the semiconductor region between the electrodes, the electrodes
1. A photodetector, comprising: a substrate;a semiconductor region on the substrate;an antenna including first and second arms on the substrate, the semiconductor region between the arms; andfirst and second electrodes on the substrate, the semiconductor region between the electrodes, the electrodes configured to induce an avalanche gain in the semiconductor region upon application of a bias voltage. 2. The photodetector of claim 1, wherein the photodetector is configured to convert near-infrared light into an electrical signal. 3. The photodetector of claim 2, wherein the antenna is a dipole antenna, and the first and second arms each have a length corresponding to a quarter of a near-infrared wavelength. 4. The photodetector of claim 1, further comprising: a silicon oxide layer on the substrate, the antenna on the silicon oxide layer. 5. The photodetector of claim 1, wherein a surface area of the semiconductor region is about 100 nm in a direction of the antenna by about 200 nm in a direction of the electrodes. 6. The photodetector of claim 1, wherein the bias voltage is in a range of about 3 V to about 5 V. 7. A device-to-device communication device comprising: the photodetector of claim 1,wherein the photodetector is configured for infrared optical communication. 8. An image sensor including a plurality of pixels arranged on a semiconductor substrate, one of the plurality of pixels comprising: a photodetector configured to convert incident light into an electrical signal, the photodetector including, a silicon region on the substrate,a dipole antenna having two arms on the substrate, the silicon region between the two arms, andelectrodes separated from the dipole antenna on the substrate, the silicon region between the electrodes, the electrodes configured to induce avalanche gain in the silicon region upon application of a bias voltage to the electrodes; anda signal transmitting unit configured to output the electrical signal as a pixel data signal. 9. The image sensor of claim 8, wherein the photodetector and the signal transmitting unit are simultaneously manufactured by a metal oxide semiconductor (MOS) manufacturing process. 10. The image sensor of claim 8, wherein the two arms of the dipole antenna have lengths according to a wavelength of light to be detected, and the photodetector in the one of the plurality of pixels has arm lengths different from a photodetector in a different one of the plurality of pixels. 11. The image sensor of claim 10, wherein the two arms of the dipole antenna each have a length corresponding to a quarter of the wavelength of light to be detected. 12. The image sensor of claim 8, wherein the photodetector further includes a silicon oxide layer on the substrate, the dipole antenna on the silicon oxide layer. 13. The image sensor of claim 8, wherein a surface area of the silicon region is about 100 nm in a direction of the dipole antenna by about 200 nm in a direction of the electrodes. 14. The image sensor of claim 8, wherein the bias voltage is in a range of about 3 V to about 5 V. 15. The image sensor of claim 8, wherein the signal transmitting unit includes a transfer transistor configured to transmit optical charges generated in the photodetector to a floating diffusion region; a reset transistor configured to reset the floating diffusion region to a power source voltage level and to discharge charges stored in the floating diffusion region;a drive transistor configured to generate the pixel data signal corresponding to charges accumulated in the floating diffusion region; anda select transistor configured to receive switching and addressing signals and transmit the pixel data signal to an output terminal.
이 특허에 인용된 특허 (3)
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Norton Paul R. (Santa Barbara CA), Integrated IR and mm-wave detector.
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Komiyama, Susumu; Oleg, Astafiev; Vladimir, Antonov; Hirai, Hiroshi; Kutsuwa, Takeshi, Millimeter wave and far-infrared detector.
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Luukanen,Arttu, Superconducting antenna-coupled hot-spot microbolometer, methods for its manufacture and use, and a bolometric imaging arrangement.
이 특허를 인용한 특허 (2)
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Lee, HyunSeok; Jung, Jung-Kyu; Park, Yoondong; Lee, Taeyon, Photodetector and image sensor including the same.
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Lee, HyunSeok; Jung, Jung-Kyu; Park, Yoondong; Lee, Taeyon, Photodetector and image sensor including the same.
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