IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0700649
(2010-02-04)
|
등록번호 |
US-8193527
(2012-06-05)
|
우선권정보 |
KR-10-2005-0019057 (2005-03-08) |
발명자
/ 주소 |
|
출원인 / 주소 |
- Samsung Mobile Display Co., Ltd.
|
대리인 / 주소 |
Knobbe Martens Olson & Bear LLP
|
인용정보 |
피인용 횟수 :
2 인용 특허 :
10 |
초록
▼
Provided are an organic thin film transistor providing smoother movement of holes between a source electrode or a drain electrode and a p-type organic semiconductor layer, and a flat panel display device including the organic thin film transistor. The organic thin film transistor includes a substrat
Provided are an organic thin film transistor providing smoother movement of holes between a source electrode or a drain electrode and a p-type organic semiconductor layer, and a flat panel display device including the organic thin film transistor. The organic thin film transistor includes a substrate, a gate electrode disposed on the substrate, a p-type organic semiconductor layer insulated from the gate electrode, a source electrode and a drain electrode separated from each other and insulated from the gate electrode, and a hole injection layer interposed between the source and drain electrodes and the p-type organic semiconductor layer.
대표청구항
▼
1. An organic thin film transistor comprising: a substrate;a gate electrode disposed on the substrate;a p-type organic semiconductor layer insulated from the gate electrode;a source electrode and a drain electrode separated from each other and insulated from the gate electrode; anda hole injection l
1. An organic thin film transistor comprising: a substrate;a gate electrode disposed on the substrate;a p-type organic semiconductor layer insulated from the gate electrode;a source electrode and a drain electrode separated from each other and insulated from the gate electrode; anda hole injection layer interposed between the source and drain electrodes and the p-type organic semiconductor layer,wherein the p-type organic semiconductor layer is disposed over the gate electrode, the source electrode and the drain electrode are disposed over the p-type organic semiconductor layer, and a gate insulation film is further disposed between the p-type organic semiconductor layer and the gate electrode, andwherein the hole injection layer is disposed to cover the p-type organic semiconductor layer. 2. The organic thin film transistor of claim 1, wherein the p-type organic semiconductor layer is a hole transport layer. 3. The organic thin film transistor of claim 1, wherein a highest occupied molecular orbit level of the hole injection layer exists in between a Fermi level of the source electrode or drain electrode and a highest occupied molecular orbit level of the p-type organic semiconductor layer. 4. The organic thin film transistor of claim 1, wherein a hole mobility of the p-type organic semiconductor layer is greater than a hole mobility of the hole injection layer. 5. The organic thin film transistor of claim 1, wherein the thickness of the hole injection layer is from about 10 nm to about 100 nm. 6. The organic film transistor of claim 1, wherein the hole injection layer is formed of at least one compound selected from the group consisting of a triarylamine-based compound, a diarylamine-based compound, an arylamine-based compound, and a phthalocyan-based compound containing metal. 7. The organic thin film transistor of claim 1, wherein the p-type organic semiconductor layer is formed of at least one material selected from the group consisting of pentacene, polythienylenevinylene, poly-3-hexylthiophene, α-4-thiophene, perylene, rubrene, coronene, polythiophene, polyparaphenylenevinylene, polyparaphenylene, polyfluorene, polythiophenevinylene, polyparaphenylene, polyfluorene, polythiophenevinylene, polythiophene-heterocyclic aromatic copolymer, and derivatives of these materials. 8. The organic thin film transistor of claim 1, further comprising a channel region wherein the thickness of the channel region to be formed in the p-type organic semiconductor layer is from about 50 nm to about 200 nm. 9. A flat panel display device comprising one or more organic thin film transistors, each comprising: a substrate;a gate electrode disposed on the substrate;a p-type organic semiconductor layer insulated from the gate electrode;a source electrode and a drain electrode separated from each other and insulated from the gate electrode; anda hole injection layer interposed between the source and drain electrodes and the p-type organic semiconductor layer,wherein the p-type organic semiconductor layer is disposed over the gate electrode, the source electrode and the drain electrode are disposed over the p-type organic semiconductor layer, and a gate insulation film is further disposed between the p-type organic semiconductor layer and the gate electrode, andwherein the hole injection layer is disposed to cover the p-type organic semiconductor layer. 10. The flat panel display device of claim 9, wherein the p-type organic semiconductor layer is a hole transport layer. 11. The flat panel display device of claim 9, wherein a highest occupied molecular orbit level of the hole injection layer exists in between a Fermi level of the source electrode or drain electrode and a highest occupied molecular orbit level of the p-type organic semiconductor layer. 12. The flat panel display device of claim 9, wherein the hole mobility of the p-type organic semiconductor layer is greater than a hole mobility of the hole injection layer. 13. The flat panel display device of claim 9, wherein the thickness of the hole injection layer is from about 10 nm to about 100 nm. 14. The flat panel display device of claim 9, wherein the hole injection layer is formed of at least one compound selected from the group consisting of a triarylamine-based compound, a diarylamine-based compound, an arylamine-based compound, and a phthalocyan-based compound containing metal. 15. The flat panel display device of claim 9, wherein the p-type organic semiconductor layer is formed of at least one material selected from the group consisting of pentacene, polythienylenevinylene, poly-3-hexylthiophene, α-hexathienylene, tetracene, antharacene, naphthalene, α-6-thiophene, α-4-thiophene, perylene, rubrene, coronene, polythiophene, polyparaphenylenevinylene, polyparaphenylene, polyfluorene, polythiophenevinylene, polythiophene-heterocyclic aromatic copolymer, and derivatives of these materials. 16. The flat panel display device of claim 9, further comprising a channel region wherein the thickness of the channel region to be formed in the p-type organic semiconductor layer is from about 50 nm to about 200 nm.
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