IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0950376
(2010-11-19)
|
등록번호 |
US-8196546
(2012-06-12)
|
발명자
/ 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
47 |
초록
▼
Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or
Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer.
대표청구항
▼
1. An apparatus for implanting two species of ions into an implantation surface of a semiconductor wafer, comprising: a first source of plasma (first plasma), which includes a first species of ions;a second source of plasma (second plasma), which includes a second, differing, species of ions;a seal
1. An apparatus for implanting two species of ions into an implantation surface of a semiconductor wafer, comprising: a first source of plasma (first plasma), which includes a first species of ions;a second source of plasma (second plasma), which includes a second, differing, species of ions;a seal system having at least two states: (i) a first state in which the first plasma is permitted to pass through an outlet and the second plasma is sealed off, and (ii) a second state in which the second plasma is permitted to pass through the outlet and the first plasma is sealed off; andan accelerator system in communication with the outlet of the seal system, and operating to: (i) accelerate the first species of ions from the first plasma toward a semiconductor wafer, only when the seal system is in the first state, and implant the first species of ions into the implantation surface of the semiconductor wafer to a desired depth below the implantation surface of the semiconductor wafer to create an exfoliation layer therein, and (ii) accelerate the second species of ions from the second plasma toward the semiconductor wafer, only when the seal system is in the second state, implant the second species of ions into the implantation surface of the semiconductor wafer to a desired depth below the implantation surface of the semiconductor wafer to create the exfoliation layer therein. 2. The apparatus of claim 1, further comprising: an end station operating to support and translate the semiconductor wafer such that the first and second species of ions, separately and serially, bombard an implantation surface of the semiconductor wafer to create the exfoliation layer therein. 3. The apparatus of claim 2, wherein: the end station operates to maintain a controlled atmosphere within which the semiconductor wafer is disposed during implantation; andthe end station operates to maintain the semiconductor wafer within the controlled atmosphere during at least one transition of the seal system from the first state to the second state. 4. The apparatus of claim 3, wherein: the end station translates the semiconductor wafer through the first species of ions when the seal system is in the first state;the end station operates to maintain the semiconductor wafer within the controlled atmosphere during a transition of the seal system from the first state to the second state; andthe end station translates the semiconductor wafer through the second species of ions when the seal system is in the second state. 5. An apparatus, comprising: a first source of plasma (first plasma), which includes a first species of ions;a second source of plasma (second plasma), which includes a second, differing, species of ions;a seal system having at least two states: (i) a first state in which the first plasma is permitted to pass through an outlet and the second plasma is sealed off, and (ii) a second state in which the second plasma is permitted to pass through the outlet and the first plasma is sealed off; andan accelerator system in communication with the outlet of the seal system, and operating to: (i) accelerate the first species of ions toward a semiconductor wafer only when the seal system is in the first state, and (ii) accelerate the second species of ions toward the semiconductor wafer only when the seal system is in the second state, wherein:the seal system includes: (i) a first plate including a first surface, an opposing second surface, and the outlet having at least one aperture extending through the first plate, and (ii) at least one second plate having a first surface, an opposing second surface, and at least first and second ports extending therethrough; andthe first surfaces of the first and second plates are in sliding communication with one another such that:(i) in the first state, the first port is in registration with the aperture of the outlet, thereby permitting the first plasma to pass through the outlet, and the second port is sealed off against the first surface of the first plate,(ii) in the second state, the second port is in registration with the aperture of the outlet, thereby permitting the second plasma to pass through the outlet, and the first port is sealed off against the first surface of the first plate, and(iii) the first and second plates operate to slide with respect to one another to move the first and second ports into, and out of, registration with the outlet. 6. The apparatus of claim 1, wherein: the first source of plasma includes a source of a first species of atoms and/or molecules in communication with a first chamber, the first chamber operating to produce the plasma having the first species of ions from the first species of atoms or molecules; andthe second source of plasma includes a source of a second species of atoms and/or molecules in communication with a second chamber, the second chamber operating to produce the plasma having the second species of ions from the second species of atoms and/or molecules. 7. An apparatus, comprising: a first source of plasma (first plasma), which includes a first species of ions;a second source of plasma (second plasma), which includes a second, differing, species of ions;a seal system having at least two states: (i) a first state in which the first plasma is permitted to pass through an outlet and the second plasma is sealed off, and (ii) a second state in which the second plasma is permitted to pass through the outlet and the first plasma is sealed off; andan accelerator system in communication with the outlet of the seal system, and operating to: (i) accelerate the first species of ions toward a semiconductor wafer only when the seal system is in the first state, and (ii) accelerate the second species of ions toward the semiconductor wafer only when the seal system is in the second statean analyzer magnet system having a plasma input and an ion output, the plasma input being in communication with the outlet of the seal, wherein:the plasma input receives the first plasma from the outlet when the seal system is in the first state, and the analyzer magnet system operates to alter a trajectory of the first species of ions from the first plasma, thereby producing at least one first ion beam, comprising the first species of ions, through the output thereof;the plasma input receives the second plasma when the seal system is in the second state, and the analyzer magnet system operates to alter a trajectory of the second species of ions from the second plasma, thereby producing at least one second ion beam, comprising the second species of ions, through the output thereof; andthe accelerator system operates to accelerate the first and second ion beams, respectively, from the analyzer magnet system toward the semiconductor wafer. 8. The apparatus of claim 7, wherein the accelerator system is controllable into at least two states: (i) a first state in which the first species of ions from the first plasma is accelerated at a first magnitude from the outlet of the seal system along a first axis, and through the analyzer magnet system, such that the first ion beam leaves the output of the analyzer magnet system along a second axis, transverse to the first axis; and(i) a second state in which the second species of ions from the second plasma is accelerated at a second magnitude from the outlet of the seal system along the first axis, and through the analyzer magnet system, such that the second ion beam leaves the output of the analyzer magnet system along the second axis. 9. The apparatus of claim 8, further comprising an end station having an input aligned with the second axis to receive the first and second ion beams, respectively, wherein the end station operates to: (i) maintain a controlled atmosphere within which the semiconductor wafer is disposed, and translate the semiconductor wafer through the first ion beam, when the seal system is in the first state;(ii) maintain the semiconductor wafer in the controlled atmosphere during a transition of the seal system from the first state to the second state; and(iii) maintain the controlled atmosphere and translate the semiconductor wafer through the second ion beam, when the seal system is in the second state. 10. The apparatus of claim 1, wherein the first and second species of ions are taken from the group consisting of: boron, hydrogen, and helium.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.