IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0756014
(2007-05-31)
|
등록번호 |
US-8197647
(2012-06-12)
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우선권정보 |
JP-2004-025710 (2004-02-02); JP-2004-025711 (2004-02-02); JP-2004-035474 (2004-02-12); JP-2004-069117 (2004-03-11); JP-2004-069118 (2004-03-11) |
발명자
/ 주소 |
- Yamamoto, Kenji
- Kujime, Susumu
- Takahara, Kazuki
- Fujii, Hirofumi
|
출원인 / 주소 |
|
대리인 / 주소 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
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인용정보 |
피인용 횟수 :
0 인용 특허 :
16 |
초록
▼
A hard laminated Mm wherein a layer A and a layer B having specific compositions are deposited alternately so that the compositions of layer A and layer B are different. The thickness of layer A per layer is twice or more the thickness of layer B per layer, the thickness of layer B per layer is 5 nm
A hard laminated Mm wherein a layer A and a layer B having specific compositions are deposited alternately so that the compositions of layer A and layer B are different. The thickness of layer A per layer is twice or more the thickness of layer B per layer, the thickness of layer B per layer is 5 nm or more, and the thickness of layer A per layer is 200 nm or less.
대표청구항
▼
1. A method of forming a hard laminated film comprising a layer A and a layer B of specific compositions deposited alternately, wherein the crystal structure of layer A differs from the crystal structure of layer B, the thickness of layer A per layer is two or more times that of layer B per layer, t
1. A method of forming a hard laminated film comprising a layer A and a layer B of specific compositions deposited alternately, wherein the crystal structure of layer A differs from the crystal structure of layer B, the thickness of layer A per layer is two or more times that of layer B per layer, the thickness of layer B per layer is 0.5 nm or more, and the thickness of layer A per layer is 200 nm or less, wherein an arc vaporization source and a sputter vaporization source are simultaneously operated in a film-forming atmosphere comprising a reactive gas using a film-forming device comprising one or more of each of an arc vaporization source and sputter vaporization source also having a magnetic field applying function in the same vacuum container so that the components of said layer A are vaporized by the arc vaporization source and the components of said layer B are vaporized by the sputter vaporization source, respectively, and a substrate is moved relative to said vaporization sources so that said layer A and said layer B are deposited alternately on the substrate. 2. The method according to claim 1, wherein said film-forming atmosphere is a gaseous mixture of said reactive gas with an inert gas for sputtering, the partial pressure of said reactive gas being 0.5 Pa or more. 3. The method of forming a hard laminated film according to claim 1, wherein a hard film containing nitrogen is formed, and nitrogen is mixed with a sputter gas so that the partial pressure of the mixed nitrogen is 0.5 Pa or more. 4. The method according to claim 1, wherein the hard laminated film has, as its structure, one or more layer A/layer B/layer A/layer B units, and wherein the composition of each layer A may be the same or different, and the composition of each layer B may be the same or different. 5. The method according to claim 1, wherein the hard laminated film has, as its structure, one or more layer A/layer A/layer B/layer B units, one or more layer A/layer B/layer B/layer A units, one or more layer B/layer B/layer A/layer A units, or one or more layer B/layer A/layer A/layer B units, and wherein the composition of each layer A may be the same or different, and the composition of each layer B may be the same or different. 6. The method according to claim 1, wherein Layer A:(Cr1−αXα) (BaCbN1−a−b−cOc)e, wherein X is at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Mo, W, Al and Si, and 0≦α≦0.9, 0≦a≦0.15, 0≦b≦0.3, 0≦c≦0.1, 0.2≦e≦1.1 (α is the atomic ratio of X, and a, b, c are respectively the atomic ratios of B, C, O),andLayer B:B1−s−tCsNt, wherein 0≦s≦0.25, (1−s−t)/t≦1.5 (s, t are respectively the atomic ratios of C and N), orSi1−x−yCxNy, wherein 0
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