IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0937164
(2007-11-08)
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등록번호 |
US-8197894
(2012-06-12)
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발명자
/ 주소 |
- Miller, Steven A.
- Schmidt-Park, Olaf
- Kumar, Prabhat
- Wu, Richard
- Sun, Shuwei
- Zimmermann, Stefan
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출원인 / 주소 |
|
대리인 / 주소 |
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인용정보 |
피인용 횟수 :
15 인용 특허 :
106 |
초록
In various embodiments, sputter-target formation includes application of a layer having an intermediate coefficient of thermal expansion between the backing plate and the target material.
대표청구항
▼
1. A method of forming a sputter target, the method comprising: providing a structure comprising: a backing plate comprising a backing-plate material, anddisposed on the backing plate, an intermediate layer; andapplying to the intermediate layer a target material,wherein the intermediate layer (i) h
1. A method of forming a sputter target, the method comprising: providing a structure comprising: a backing plate comprising a backing-plate material, anddisposed on the backing plate, an intermediate layer; andapplying to the intermediate layer a target material,wherein the intermediate layer (i) has a coefficient of thermal expansion (CTE) between a CTE of the backing plate and a CTE of the target material and (ii) comprises a powder mixture of the backing-plate material and the target material. 2. The method of claim 1, wherein the target material consists essentially of non-melted metal powder. 3. The method of claim 1, wherein, after being applied to the intermediate layer, the target material is substantially free of grain-size banding and texture banding. 4. The method of claim 1, wherein, after being applied to the intermediate layer, the target material has a substantially uniform equiaxed grain structure and an average grain size less than 44 microns. 5. The method of claim 4, wherein the average grain size of the target material is less than 10 microns. 6. The method of claim 1, wherein the backing-plate material comprises copper, aluminum, or an alloy of beryllium with at least one of copper or aluminum. 7. The method of claim 1, wherein the target material is selected from the group consisting of: niobium, tantalum, tungsten, molybdenum, zirconium, titanium, and alloys thereof. 8. The method of claim 1, wherein applying the target material comprises spray deposition. 9. The method of claim 8, wherein applying the target material comprises cold spray. 10. The method of claim 1, wherein, while applying the target material on the intermediate layer, neither the target material nor any portion of the backing plate melts. 11. The method of claim 1, wherein, after being applied to the intermediate layer, the target material is substantially free of preferred crystalline texture. 12. The method of claim 1, further comprising, after applying the target material, annealing the structure. 13. The method of claim 1, further comprising: placing the (i) the structure comprising the backing plate, the intermediate layer, and the target material and (ii) a substrate within a sputtering chamber;after substantially no burn in, sputtering the target material, thereby forming a thin film on the substrate, the thin film comprising the target material. 14. The method of claim 13, wherein a non-uniformity of the thin film ranges from approximately 1.5% to approximately 4%. 15. The method of claim 13, further comprising annealing the structure comprising the backing plate, the intermediate layer, and the target material prior to placing it within the sputtering chamber.
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