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In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions are formed on a backside of the substrate. An isotropic etch of the backsi

In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions are formed on a backside of the substrate. An isotropic etch of the backside results in a thinning of the substrate while maintaining the depth of the trenches, thereby facilitating singulation of the die.

대표청구항 ▼

1. A device comprising a semiconductor die comprising a substrate, the substrate comprising a first major surface at which a semiconductor device is formed, and a minor surface having a roughness of a scalloping nature, wherein the minor surface is perpendicular to the major surface. 2. The device o

1. A device comprising a semiconductor die comprising a substrate, the substrate comprising a first major surface at which a semiconductor device is formed, and a minor surface having a roughness of a scalloping nature, wherein the minor surface is perpendicular to the major surface. 2. The device of claim 1, wherein the roughness of the scalloping nature is approximately 50 nm. 3. The device of claim 2, wherein the substrate further comprises a second major surface opposite the first major surface, the second major surface having a roughness of less than 5 nm. 4. The device of claim 3, wherein the substrate comprises a semiconductor, and the second major surface has a roughness that is atomically smooth. 5. The device of claim 4, wherein the semiconductor is silicon. 6. The device of claim 3, wherein the substrate has a thickness of less than 65 microns. 7. The device of claim 3, wherein the substrate has a thickness of less than 51 microns. 8. The device of claim 3, wherein the substrate has a thickness of less than 40 microns. 9. The device of claim 3, wherein the device further comprises a metal layer overlying the second major surface of the substrate. 10. The device of claim 9, wherein the metal layer is formed subsequent to forming the minor surface of the substrate. 11. The device of claim 1, wherein the substrate comprises a bulk semiconductor substrate. 12. The device of claim 1, wherein the substrate comprises a semiconductor-on-insulator substrate. 13. The device of claim 1 further comprising a packaged device comprising the semiconductor die. 14. The device of claim 13, wherein the packaged device comprises a plastic package. 15. The device of claim 13, wherein the packaged device comprises a ceramic package. 16. The device of claim 13, wherein the packaged device comprises a ball grid array package. 17. The device of claim 1, wherein the substrate has a thickness of less than 65 microns. 18. The device of claim 17, wherein the substrate comprises a bulk semiconductor substrate. 19. The device of claim 1, wherein the substrate has a thickness of less than 51 microns. 20. The device of claim 1, wherein the substrate has a thickness of less than 40 microns.