[특허]Solution-based fabrication of photovoltaic cell

Solution-based fabrication of photovoltaic cell 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01B-001/12 B05D-007/00
출원번호	US-0933285 (2007-10-31)
등록번호	US-8206616 (2012-06-26)
발명자 / 주소	Yu, Dong Fidanza, Jacqueline Sager, Brian M.
출원인 / 주소	Nanosolar, Inc.
인용정보	피인용 횟수 : 3 인용 특허 : 65

초록 ▼

An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

대표청구항 ▼

1. A method for fabricating a liquid containing intermixed elements of groups IB and IIIA, and VIA, comprising the steps of: forming non-oxide nanoparticles containing elements from group IB; IIIA; and VIA;intermixing the non-oxide nanoparticles; andmixing the non-oxide nanoparticles to form a liquid that serves as an ink,wherein forming non-oxide nanoparticles includes a reaction of the type: (IB)(Hal)+(IIIA)(Hal)+TOP(VIA)+TOPO→IB-IIIA-VIA,where IB refers to an element of group IB, IIIA refers to an element of group IIIA, VIA refers to an element of group VIA and Hal refers to a halogen. 2. The method of claim 1 wherein the halogen is selected from the group consisting of: iodine (I) and chlorine (Cl). 3. The method of claim 1 wherein forming non-oxide nanoparticles includes a reaction of the type: CuCl+InCl3(+GaI3)+TOPSe(S)+TOPO→Cu(Ga,In)Se(S)2. 4. The method of claim 1 wherein the size distribution of the particles is adjusted by controlling the reaction conditions under which the nanoparticles are made. 5. The method of claim 1 wherein trioctylphosphine oxide (TOPO) is heated to about 100° C., followed by degassing and flushing with nitrogen. 6. The method of claim 1 wherein an equimolar solution of InCl3 and CuCl in Trioctylphosphine (TOP) is injected into hot TOPO at 100° C. 7. The method of claim 1 wherein TOPO turns bright yellow after injection, and the temperature drops to 80° C. and wherein the reaction proceeds for about 30 min to one hour, after which the temperature is increased to 250° C., and then trioctylphospine selenide (TOPSe) is injected into the TOPO solution (which comprises a mixture of Se powder and TOP) is stirred at room temperature for a time sufficient to give a clear solution of TOPSe. 8. The method of claim 1 wherein there is an initial drop in temperature to 220° C., after which the reaction stabilizes at about 250° C. and proceeds for 24-36 h. 9. The method of claim 1 wherein the reaction mixture is then cooled to about 60° C. or less, followed by the addition of excess methanol to flocculate the particles. 10. The method of claim 1 wherein there is no immediate visible precipitation on the addition of methanol. 11. The method of claim 1 wherein TOPO-capped CuInSe2 nanoparticles are mixed with water and an optional dispersant in an aqueous liquid to form a CIGS ink. 12. The method of claim 1 wherein a ratio of nanoparticles to water in weight percentage is between about 10% and about 60%. 13. The method of claim 1 wherein a ratio of nanoparticles to water in weight percentage is about 40%. 14. The method of claim 1 wherein after coating a substrate with a film of the ink, the TOPO is decomposed by heating. 15. The method of claim 14 wherein at the same time, the heating is sufficient such that CuInSe2 nanoparticles anneal together to form a polycrystalline film. 16. The method of claim 14 further comprising heating is sufficient such that CuInSe2 nanoparticles anneal together to form a polycrystalline film. 17. The method of claim 1 wherein the non-oxide nanoparticles are added to a solvent to form a suspension. 18. The method of claim 1 wherein the non-oxide nanoparticles are added to a solvent to form a colloidal suspension. 19. The method of claim 14 further comprising depositing the liquid ink on a substrate; and heating the liquid ink in one or more steps to form a photovoltaic absorber layer.

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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연합인증

Solution-based fabrication of photovoltaic cell 원문보기

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Solution-based fabrication of photovoltaic cell 원문보기

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