초록

An amorphous oxide at least includes: at least one element selected from the group consisting of In, Zn, and Sn; and Mo. An atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower.

대표청구항 ▼

1. An amorphous oxide comprising: In—Ga—Zn—O with Mo added,wherein an atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower, andwherein an atomic composition ratio of In to a sum of In and Zn, In/(In+Zn), in the In—Ga—Zn

1. An amorphous oxide comprising: In—Ga—Zn—O with Mo added,wherein an atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower, andwherein an atomic composition ratio of In to a sum of In and Zn, In/(In+Zn), in the In—Ga—Zn—O with Mo added is 30 atom % or higher and 80 atom % or lower. 2. An amorphous oxide according to claim 1, wherein the atomic composition ratio of Mo to the number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 3 atom % or lower. 3. An amorphous oxide comprising: In—Ga—Zn—O with Mo added,wherein an atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower, andwherein an atomic composition ratio of Zn to the number of all metallic atoms in the amorphous oxide is 70 atom % or lower. 4. A field effect transistor comprising: a drain electrode;a source electrode;a gate electrode;an active layer; anda gate insulating film,wherein said active layer comprises an amorphous oxide,wherein said amorphous oxide at least comprises: at least one element selected from the group consisting of In, Zn, and Sn; andMo,wherein an atomic composition ratio of Mo to a number of all metallic atoms in said amorphous oxide is 0.1 atom % or higher and 5 atom % or lower. 5. A field effect transistor according to claim 4, wherein said source electrode and said drain electrode contain Mo. 6. In combination, a display apparatus and a field effect transistor according to claim 4, wherein said field effect transistor is incorporated in said display apparatus, wherein said display apparatus includes an electrode, and wherein one of said source electrode and said drain electrode of said field effect transistor is connected to said electrode of said display apparatus. 7. A combination according to claim 6, wherein said display apparatus includes an electroluminescence device. 8. A combination according to claim 6, wherein said display apparatus includes a liquid crystal cell. 9. A field effect transistor according to claim 4, wherein the atomic composition ratio of Mo to the number of all metallic atoms in said amorphous oxide is 0.1 atom % or higher and 3 atom % or lower. 10. A field effect transistor according to claim 4, wherein said amorphous oxide comprises In and Zn. 11. A field effect transistor according to claim 4, wherein said amorphous oxide further comprises Ga. 12. A field effect transistor according to claim 4, wherein an atomic composition ratio of In to a sum of In and Zn, In/(In+Zn), in said amorphous oxide is 30 atom % or higher and 80 atom % or lower. 13. A field effect transistor according to claim 4, wherein an atomic composition ratio of Zn to the number of all metallic atoms in said amorphous oxide is 70 atom % or lower. 14. A field effect transistor according to claim 4, wherein said source electrode and said drain electrode are provided over said active layer. 15. An amorphous oxide comprising: at least one element selected from the group consisting of In, Zn, and Sn; andMo,wherein an atomic composition ratio of Mo to a number of all metallic atoms in said amorphous oxide is 0.1 atom % or higher and 5 atom % or lower,wherein a film comprising said amorphous oxide is a semiconductor film, andwherein said semiconductor film has an electrical resistivity of 1 Ωcm to 100 kΩcm. 16. An amorphous oxide according to claim 15, wherein the atomic composition ratio of Mo to the number of all metallic atoms in said amorphous oxide is 0.1 atom % or higher and 3 atom % or lower. 17. An amorphous oxide according to claim 15, wherein said amorphous oxide comprises In and Zn. 18. An amorphous oxide according to claim 15, wherein said amorphous oxide further comprises Ga. 19. An amorphous oxide according to claim 15, wherein an atomic composition ratio of In to a sum of In and Zn, In/(In+Zn), in said amorphous oxide is 30 atom % or higher and 80 atom % or lower. 20. An amorphous oxide according to claim 15, wherein an atomic composition ratio of Zn to the number of all metallic atoms in said amorphous oxide is 70 atom % or lower. 21. An amorphous oxide according to claim 3, wherein the atomic composition ratio of Mo to the number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 3 atom % or lower.