Methods of atomic layer deposition using titanium-based precursors
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H05H-001/24
C23C-016/00
C23C-008/00
출원번호
US-0207973
(2008-09-10)
등록번호
US-8221852
(2012-07-17)
발명자
/ 주소
Heys, Peter Nicholas
Kingsley, Andrew
Song, Fuquan
Williams, Paul
Leese, Thomas
Davies, Hywel Owen
Odedra, Rajesh
출원인 / 주소
Sigma-Aldrich Co. LLC
대리인 / 주소
Harness, Dickey & Pierce, P.L.C.
인용정보
피인용 횟수 :
6인용 특허 :
4
초록▼
Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein:R is C1-C6-alkyl;n is zero, 1, 2, 3, 4 or 5;L is C1-C6-alkoxy
Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein:R is C1-C6-alkyl;n is zero, 1, 2, 3, 4 or 5;L is C1-C6-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.
대표청구항▼
1. A method of forming a titanium-containing film by atomic layer deposition, the method comprising delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein:R is C1-C6-alkyl;n is 1, 2, 3, 4 or 5;L is C1-C6-alkoxy or amino, wh
1. A method of forming a titanium-containing film by atomic layer deposition, the method comprising delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein:R is C1-C6-alkyl;n is 1, 2, 3, 4 or 5;L is C1-C6-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl. 2. The method of claim 1, wherein R is methyl, ethyl or propyl;n is 1 or 2; andL is selected from the group consisting of methoxy, ethoxy, propoxy, butoxy, dimethylamino, ethylmethylamino, and diethylamino. 3. The method of claim 1, wherein R is methyl or ethyl;n is 1 or 2; andL is selected from the group consisting of methoxy, ethoxy, propoxy, and butoxy. 4. The method of claim 1, wherein R is methyl or ethyl;n is 1; andL is selected from the group consisting of methoxy, ethoxy, propoxy and butoxy. 5. The method of claim 1, wherein R is methyl or ethyl;n is 1 or 2; andL is selected from the group consisting of dimethylamino, ethylmethylamino, and diethylamino. 6. The method of claim 1, wherein the compound of Formula (I) is selected from the group consisting of: (methylcyclopentadienyl)Ti(NMe2)3;(ethylcyclopentadienyl)Ti(NMe2)3;(propylcyclopentadienyl)Ti(NMe2)3;(methylcyclopentadienyl)Ti(NEt2)3;(ethylcyclopentadienyl)Ti(NEt2)3;(propylcyclopentadienyl)Ti(NEt2)3;(methylcyclopentadienyl)Ti(NMeEt)3;(ethylcyclopentadienyl)Ti(NMeEt)3;(propylcyclopentadienyl)Ti(NMeEt)3;(methylcyclopentadienyl)Ti(OMe)3;(ethylcyclopentadienyl)Ti(OMe)3;(propylcyclopentadienyl)Ti(OMe)3;(methylcyclopentadienyl)Ti(OEt)3;(ethylcyclopentadienyl)Ti(OEt)3;(propylcyclopentadienyl)Ti(OEt)3;(methylcyclopentadienyl)Ti(OiPr)3;(ethylcyclopentadienyl)Ti(OiPr)3;(propylcyclopentadienyl)Ti(OiPr)3;(methylcyclopentadienyl)Ti(OtBu)3;(ethylcyclopentadienyl)Ti(OtBu)3; and(propylcyclopentadienyl)Ti(OtBu)3. 7. The method of claim 1, wherein the compound of Formula (I) is selected from the group consisting of: (methylcyclopentadienyl)Ti(NMe2)3;(methylcyclopentadienyl)Ti(OMe)3;(methylcyclopentadienyl)Ti(OiPr)3; and(methylcyclopentadienyl)Ti(OtBu)3. 8. The method of claim 1, wherein the atomic layer deposition comprises photo-assisted atomic layer deposition. 9. The method of claim 1, wherein the atomic layer deposition comprises liquid injection atomic layer deposition. 10. The method of claim 1, wherein the at least one precursor is delivered to the substrate in pulses alternating with pulses of an oxygen source. 11. The method of claim 10, wherein the oxygen source is selected from H2O, O2 or ozone. 12. The method of claim 1, further comprising delivering to the substrate at least one co-reactant selected from the group consisting of hydrogen, hydrogen plasma, oxygen, air, water, ammonia, hydrazines, alkylhydrazines, boranes, silanes, ozone and a combination thereof. 13. The method of claim 1, wherein at least two precursors corresponding in structure to Formula I are delivered to the substrate to form a titanium-containing film by atomic layer deposition. 14. The method of claim 1, further comprising delivering to the substrate at least one non-titanium precursor to form a mixed metal film by atomic layer deposition. 15. The method of claim 14, wherein the mixed metal film formed is selected from the group consisting of strontium titanate, barium titanate, hafnium titanate, zirconium titanate and lead zirconate titanate. 16. The method of claim 1, wherein the titanium-containing film is used for a memory and/or logic application.
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이 특허에 인용된 특허 (4)
Chau,Robert S.; Metz,Matthew V.; Hareland,Scott A., Atomic layer deposition using photo-enhanced bond reconfiguration.
Westmoreland Donald L. (Boise ID) Sandhu Gurtej S. (Boise ID), High efficiency method for performing a chemical vapor deposition utilizing a nonvolatile precursor.
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