Power node switching center with active feedback control of power switches
원문보기
IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0652383
(2010-01-05)
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등록번호 |
US-8223469
(2012-07-17)
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발명자
/ 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
0 인용 특허 :
9 |
초록
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A circuit fault detector and interrupter which consists of parallel current conduction paths, including a path through a mechanical contactor and a path through a power electronics switch having active feedback control. A fault can be detected by a fault detection circuit within 50 microseconds of t
A circuit fault detector and interrupter which consists of parallel current conduction paths, including a path through a mechanical contactor and a path through a power electronics switch having active feedback control. A fault can be detected by a fault detection circuit within 50 microseconds of the occurrence of the fault, causing the mechanical contactor to be opened and the fault current to be commutated via a laminated, low-inductance bus through the power electronics switch. The power electronics switch is thereafter turned off as soon as possible, interrupting the fault current and absorbing the inductive energy in the circuit. The fault current can be interrupted within 200 microseconds of the occurrence of the fault, and the device reduces or eliminates arcing when the mechanical contactor is opened.
대표청구항
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1. A circuit interrupting device comprising: a. a first current path, traversing a mechanical contactor;b. a second current path, parallel to said first current path, traversing a switch having active feedback control, said switch including: a power transistor device having a collector, an emitter a
1. A circuit interrupting device comprising: a. a first current path, traversing a mechanical contactor;b. a second current path, parallel to said first current path, traversing a switch having active feedback control, said switch including: a power transistor device having a collector, an emitter and a gate; anda zener diode connected between said collector and said gate of said transistor device;wherein a voltage drop between the collector and the emitter of said transistor device equal to or greater than the threshold voltage of said zener diode will cause said zener diode to be turned on and a voltage to be applied to said gate sufficient to turn said transistor device on and to hold said voltage drop at or near said threshold voltage until current flowing through said transistor device is reduced to zero; andc. fault detection circuitry, for detecting a fault condition;wherein a fault current is commutated from said first current path to said second current path upon detection of said fault current by said fault detection circuitry. 2. The switch of claim 1 further comprising gate control circuitry, responsive to outside signals and coupled to said gate of said transistor device, to turn said transistor device on or off, and wherein said voltage applied to said gate when said zener diode is turned on will turn on said transistor device independent of said gate control circuitry. 3. The circuit interrupting device of claim 1 wherein said fault detection circuitry comprises: a current detector;a high gain, narrow bandwidth integrator, coupled to the output of said current detector; anda first level detection circuit, coupled to the output of said narrow bandwidth integrator,for producing a fault signal when a fault condition is detected. 4. The device of claim 1 wherein: said mechanical contactor is opened when said fault detection circuitry detects a fault condition; andsaid active feedback control switch is shut down as soon as possible after said commutation of said fault current. 5. The device of claim 3 wherein the bandwidth of said narrow bandwidth integrator is in the range of 10 kHz to 100 kHz. 6. The device of claim 5 wherein a fault signal is produced when the response of said narrow bandwidth integrator exceeds a predetermined level. 7. The device of claim 1 wherein said narrow bandwidth integrator produces a response to line frequency current that is below said predetermined level. 8. The device of claim 6 wherein said predetermined level of said first level detection circuit is adjustable. 9. The device of claim 1 further comprising: a low gain, wide bandwidth integrator for sensing line frequency current; anda second level detection circuit, coupled to the output of said wide bandwidth integrator, for sensing line frequency current and for producing a fault signal when a fault condition is detected. 10. The device of claim 9 wherein a fault signal is produced when the response of said wide bandwidth integrator exceeds a predetermined level. 11. The device of claim 9 wherein said predetermined level of said second level detection circuit is adjustable. 12. The device of claim 9 wherein said current detector is a high frequency, narrow bandwidth current detector that can detect current components with frequencies between 10 kHz and 100 kHz and which is insensitive to line frequency current. 13. The device of claim 11 wherein said current detector is a Rogowski Coil. 14. The device of claim 1 wherein said switch having active feedback control comprises two or more switches having active feedback control arranged in series. 15. The device of claim 1 wherein said switch having active feedback control comprises two or more switches having active feedback control arranged in parallel. 16. A circuit interrupting device comprising: a. fault detection circuitry, for detecting a fault condition;b. a first current path, traversing a mechanical contactor;c. a second current path, parallel to said first current path, traversing a switch having active feedback control, said switch comprising: a transistor device having a collector, an emitter and a gate;a zener diode connected between said collector and said gate of said transistor device; andgate control circuitry, responsive to signals from said fault detection circuitry and coupled to said gate of said transistor device, to turn said transistor device on or off;wherein a voltage drop between the collector and the emitter of said transistor device equal to or greater than the threshold voltage of said zener diode will cause a voltage to be applied to said gate sufficient to turn on said transistor device independent of said gate control circuitry and to hold said voltage drop at or near said threshold voltage until current flowing through said transistor device is reduced to zero.
이 특허에 인용된 특허 (9)
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Irissou Pierre R., Apparatus and method of interrupting current for reductions in arcing of the switch contacts.
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Marquardt Rainer (Herzogenaurach DEX) Seidl Udo (Herzogenaurach DEX), Circuit arrangement for protecting power semiconductor switches which can be switched on and off against overvoltages.
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Furuhata Shoichi,JPX ; Takeuchi Shigeyuki,JPX ; Fujihira Tatsuhiko,JPX, Circuit device for igniting internal combustion engine and semiconductor device for igniting internal combustion engine.
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Penrod John K. (Bellbrook OH), Contactor device including arc supression means.
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Chokhawala Rahul S. (Phoenix AZ), IGBT switching voltage transient protection circuit.
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Shoichi Furuhata JP; Minoru Nishio JP, Ignition semiconductor device.
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Muenzer,Mark; Bayerer,Reinhold; Kanschat,Peter, Method and circuit arrangement for limiting an overvoltage.
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Atsunobu Kawamoto JP, Semiconductor device with guard ring and Zener diode layer thereover.
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John Vinod ; Suh Bum-Seok,KRX ; Lipo Thomas Anthony, Short circuit protection of IGBTs and other power switching devices.
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