Diamond-like carbon electronic devices and methods of manufacture
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-031/0312
H01L-021/00
H01L-031/00
출원번호
US-0111052
(2011-05-19)
등록번호
US-8227812
(2012-07-24)
발명자
/ 주소
Sung, Chien-Min
출원인 / 주소
RiteDia Corporation
대리인 / 주소
Thorpe North & Western LLP
인용정보
피인용 횟수 :
0인용 특허 :
12
초록▼
Materials, devices, and methods for enhancing performance of electronic devices such as solar cells, fuels cells, LEDs, thermoelectric conversion devices, and other electronic devices are disclosed and described. A diamond-like carbon electronic device can include a conductive diamond-like carbon ca
Materials, devices, and methods for enhancing performance of electronic devices such as solar cells, fuels cells, LEDs, thermoelectric conversion devices, and other electronic devices are disclosed and described. A diamond-like carbon electronic device can include a conductive diamond-like carbon cathode having specified carbon, hydrogen and sp2 bonded carbon contents. In some cases, the sp2 bonded carbon content may be sufficient to provide the conductive diamond-like carbon material with a visible light transmissivity of greater than about 0.70. A charge carrier separation layer can be coupled adjacent and between the diamond-like carbon cathode and an anode. The conductive diamond-like carbon material of the present invention can be useful for any other application which can benefit from the use of conductive and transparent electrodes which are also chemically inert, radiation damage resistance, and are simple to manufacture.
대표청구항▼
1. A diamond-like carbon electronic device, comprising: a) a diamond-like carbon cathode including a conductive diamond-like carbon material having an sp3 bonded carbon content from about 30 atom % to about 90 atom %, a hydrogen content from 0 atom % to about 30 atom %, and an sp2 bonded carbon cont
1. A diamond-like carbon electronic device, comprising: a) a diamond-like carbon cathode including a conductive diamond-like carbon material having an sp3 bonded carbon content from about 30 atom % to about 90 atom %, a hydrogen content from 0 atom % to about 30 atom %, and an sp2 bonded carbon content from about 10 atom % to about 70 atom %;b) a charge carrier separation layer adjacent the diamond-like carbon cathode, wherein the charge carrier separation layer includes amorphous silicon; andc) an anode adjacent the charge carrier separation layer opposite the diamond-like carbon cathode. 2. The device of claim 1, wherein the conductive diamond-like carbon material further includes a dopant selected from the group consisting of B, N, Si, P, Li, or combinations thereof. 3. The device of claim 1, wherein the sp2 bonded carbon content is sufficient to provide the conductive diamond-like carbon material with a visible light transmissivity of greater than about 0.70. 4. The device of claim 1, wherein the sp2 bonded carbon content is from about 35 atom % to about 60 atom %. 5. The device of claim 1, wherein the hydrogen content is from about 15 atom % to about 25 atom %. 6. The device of claim 1, wherein at least one of the diamond-like carbon cathode and anode further include a conductive additive selected from the group consisting of conductive metal particles, carbon nanotubes, graphite, conductive nanoparticles, and combinations thereof. 7. The device of claim 1, wherein the charge carrier separation layer comprises at least a portion of a p-n or p-i-n junction and the diamond-like carbon electronic device is a solar cell. 8. The device of claim 7, wherein the charge carrier separation layer further comprises multiple p-n or p-i-n junctions to form a multi-junction solar cell. 9. The device of claim 7, wherein the charge carrier separation layer further includes an n-doped region and a p-doped region. 10. The device of claim 7, wherein the charge carrier separation layer includes a p-doped region and the diamond-like carbon cathode includes an n-doped region. 11. The device of claim 7, wherein the diamond-like carbon cathode is a single layer and is configured as a passivation layer and an anti-reflection layer. 12. The device of claim 1, wherein the diamond-like carbon electronic cathode consists essentially of the conductive diamond-like carbon. 13. The device of claim 1, wherein the charge carrier separation layer has a thickness from about 10 μm to about 300 μm. 14. A method of forming a diamond-like carbon electronic device, comprising: a) preparing an amorphous silicon charge carrier separation layer;b) forming an anode, said anode being coupled adjacent the charge carrier separation layer;c) forming a diamond-like carbon cathode coupled to the charge carrier separation layer opposite the anode, said diamond-like carbon cathode including a diamond-like carbon material having a conductivity from about 0 μΩ-cm to about 80 μΩ-cm at 20° C. and a visible light transmissivity from about 0.5 to about 1.0, said conductivity and visible light transmissivity being a function of sp2 and sp3 bonded carbon content, hydrogen content, and optional conductive additives. 15. The method of claim 14, wherein the step of preparing the charge carrier separation layer includes doping the amorphous silicon to form at least a portion of a p-n or p-i-n junction. 16. The method of claim 15, further comprising doping the diamond-like carbon cathode to form an n-doped region. 17. The method of claim 14, wherein the step of forming the anode includes a vapor deposition process. 18. The method of claim 14, wherein coupling the conductive diamond-like carbon cathode further includes forming the conductive diamond-like carbon cathode on the charge carrier separation layer opposite the anode. 19. The method of claim 14, wherein the anode is a conductive diamond-like carbon anode. 20. The method of claim 14, wherein the method is substantially free of a separate passivating step.
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이 특허에 인용된 특허 (12)
Carey Paul G. (Mountain View CA) Thompson Jesse B. (Brentwood CA), b
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Jones Barbara L. (80 Chisbury Close Forest Park ; Bracknell RG12 3TX GB2), Diamond a
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Sung, Chien-Min, Diamond-like carbon electronic devices and methods of manufacture.
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