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Lanthanum-metal oxide dielectrics and methods of fabricating such dielectrics provide an insulating layer in a variety of structures for use in a wide range of electronic devices and systems. In an embodiment, a lanthanum-metal oxide dielectric is formed using a trisethylcyclopentadionatolanthanum p

Lanthanum-metal oxide dielectrics and methods of fabricating such dielectrics provide an insulating layer in a variety of structures for use in a wide range of electronic devices and systems. In an embodiment, a lanthanum-metal oxide dielectric is formed using a trisethylcyclopentadionatolanthanum precursor and/or a trisdipyvaloylmethanatolanthanum precursor. Additional apparatus, systems, and methods are disclosed.

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1. An apparatus comprising: a substrate; anda dielectric material disposed above the substrate, the dielectric material containing a region of lanthanum-metal oxide, the lanthanum-metal oxide having an oxide composition without nitrogen, the metal of the lanthanum-metal oxide being a metal other tha

1. An apparatus comprising: a substrate; anda dielectric material disposed above the substrate, the dielectric material containing a region of lanthanum-metal oxide, the lanthanum-metal oxide having an oxide composition without nitrogen, the metal of the lanthanum-metal oxide being a metal other than lanthanum, the lanthanum-metal oxide doped with a lanthanide other than lanthanum. 2. The apparatus of claim 1, wherein the lanthanum-metal oxide is structured as one or more monolayers. 3. The apparatus of claim 1, wherein the dielectric material consists essentially of the region. 4. The apparatus of claim 1, wherein the dielectric material includes a stack of insulating materials in addition to the region. 5. The apparatus of claim 1, wherein the dielectric material includes a dielectric metal oxide. 6. The apparatus of claim 5, wherein the dielectric metal oxide includes a metal different from the metal in the lanthanum-metal oxide. 7. The apparatus of claim 5, wherein the dielectric metal oxide includes a lanthanide oxide consisting essentially of the lanthanide of the lanthanide oxide and oxygen. 8. The apparatus of claim 1, wherein the dielectric material includes a dielectric nitride or a dielectric metal silicate. 9. The apparatus of claim 1, wherein the dielectric material includes an insulating non-lanthanide oxide. 10. The apparatus of claim 1, wherein the apparatus includes an interfacial region connecting the dielectric material to the substrate, the interfacial region including a lanthanum silicate, a metal silicate comprising the metal of the lanthanum-metal oxide, or a lanthanum metal silicate comprising the metal of the lanthanum-metal oxide. 11. The apparatus of claim 1, wherein the apparatus includes a metal electrode contacting the lanthanum-metal oxide, the metal electrode having a composition such that the metal electrode essentially does not undergo an interface reaction with the lanthanum-metal oxide. 12. The apparatus of claim 11, wherein the metal electrode contacting the lanthanum-metal oxide includes ruthenium. 13. The apparatus of claim 1, wherein the metal of the lanthanum-metal oxide is aluminum. 14. The apparatus of claim 1, wherein the dielectric material is disposed as a gate insulator in a silicon complementary metal-oxide semiconductor (CMOS) device. 15. The apparatus of claim 1, wherein the dielectric material is disposed as a capacitor in an integrated circuit, the integrated circuit configured as an analog integrated circuit, a radio frequency (RF) integrated circuit, or a mixed signal integrated circuit. 16. The apparatus of claim 1, wherein the dielectric material is disposed as a gate insulator or an inter-gate insulator in a transistor. 17. An apparatus comprising: a substrate; anda memory device disposed on the substrate, the memory device having a dielectric material disposed above the substrate, the dielectric material containing a region of lanthanum-metal oxide, the lanthanum-metal oxide having an oxide composition without nitrogen, the metal of the lanthanum-metal oxide being a metal other than lanthanum, the lanthanum-metal oxide doped with a lanthanide other than lanthanum. 18. The apparatus of claim 17, wherein the dielectric material is disposed as a gate insulator or an inter-gate insulator in a transistor of a flash memory device. 19. The apparatus of claim 17, wherein the dielectric material is disposed as a charge-storing nanolaminate dielectric in a flash memory device. 20. The apparatus of claim 17, wherein the dielectric material is disposed as a capacitor dielectric in a capacitor in a dynamic random access memory.