IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0515484
(2008-01-10)
|
등록번호 |
US-8241998
(2012-08-14)
|
우선권정보 |
FR-07 52684 (2007-01-16) |
국제출원번호 |
PCT/IB2008/000087
(2008-01-10)
|
§371/§102 date |
20090519
(20090519)
|
국제공개번호 |
WO2008/087527
(2008-07-24)
|
발명자
/ 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
1 인용 특허 :
2 |
초록
▼
The invention relates to semiconductor-on-insulator structure and its method of manufacture. This structure includes a substrate, a thin, useful surface layer and an insulating layer positioned between the substrate and surface layer. The insulating layer is at least one dielectric layer of a high k
The invention relates to semiconductor-on-insulator structure and its method of manufacture. This structure includes a substrate, a thin, useful surface layer and an insulating layer positioned between the substrate and surface layer. The insulating layer is at least one dielectric layer of a high k material having a permittivity that is higher than that of silicon dioxide and a capacitance that is substantially equivalent to that of a layer of silicon dioxide having a thickness of less than or equal to 30 nm.
대표청구항
▼
1. A method of manufacturing an ultra-thin-buried-insulating-layer-type of semiconductor-on-insulator (SOI) structure having an insulating layer of increased permittivity and increased thickness but substantially equivalent capacitance in comparison to a buried layer of silicon dioxide in a conventi
1. A method of manufacturing an ultra-thin-buried-insulating-layer-type of semiconductor-on-insulator (SOI) structure having an insulating layer of increased permittivity and increased thickness but substantially equivalent capacitance in comparison to a buried layer of silicon dioxide in a conventional UTBOX SOI structure wherein the buried layer is less than 30 nm thick, which method comprises: forming at least one dielectric layer of a high k material on either of a donor substrate or a receiving substrate or on both substrates, with the dielectric layer having a permittivity that is higher than that of silicon dioxide and having an increased thickness selected so that the capacitance of the dielectric layer is substantially equivalent to that of the buried layer of silicon dioxide in the conventional UTBOX SOI structure;forming an embrittlement plane in the donor substrate that defines a thin, useful layer of the donor substrate for transfer to the receiving substrate;bonding the donor and receiving substrates together at a bonding interface with the dielectric layer(s) positioned between the substrates; anddetaching the thin, useful layer by cleaving at the embrittlement plane to form a semiconductor-on-insulator structure that has a buried insulating layer of the high k dielectric material. 2. The method according to claim 1, wherein the high k dielectric layer has a dielectric constant k that is at least greater than 5. 3. The method according to claim 2, wherein the high k material of the dielectric layer is AlN, Si3N4, Al2O3, ZrO2, TiO2, HfO2, ZrSiO4, Y2O3, La2O3, Gd2O3, Ta2O5, SiTiO3, BaTiO3, SrTiO3, BaTiO3, or (Ba,Sr)TiO3. 4. The method according to claim 1, wherein the dielectric layer is formed on the substrate at a thickness sufficient to provide the buried insulating layer with a thickness of at least approximately 40 nm to at least 60 nm so that the buried insulator layer has the same capacitance as a layer of silicon dioxide that is 20 to 30 nm thick. 5. The method according to claim 1, wherein the dielectric layer is formed by deposition or by epitaxy, the forming of the embrittlement plane is accomplished by implanting at least one atomic species into the donor substrate, and the bonding is attained by molecular adhesion of bonding surfaces of the donor and receiving substrates. 6. The method according to claim 5, which further comprises activating the bonding surface of the donor substrate, the receiving substrate or of both substrates to enhance molecular bonding. 7. The method according to claim 5, wherein the high k dielectric layer is provided on the receiving substrate and which further comprises forming a protection layer on the donor substrate before implanting the atomic species. 8. The method according to claim 5, wherein the high k dielectric layer is provided on the donor substrate prior to implanting of the atomic species, and the donor substrate and thin, useful layer comprises a semiconductor, ferromagnetic, piezoelectric or pyroelectric material. 9. The method according to claim 8, wherein the donor substrate and thin, useful layer is silicon, germanium, silicon-germanium, gallium nitride, gallium arsenide, silicon carbide, Al2O3, or LiTaO3. 10. The method according to claim 5, wherein the high k dielectric layer is provided on both the donor substrate and the receiving substrate and includes an additional layer of an adhesion-promoting material to facilitate bonding. 11. The method according to claim 1, which further comprises reinforcing the bonding interface by conducting a thermal treatment on the substrates prior to detaching. 12. The method according to claim 1, which further comprises polishing the transferred useful layer to reduce surface roughness. 13. A method of manufacturing a semiconductor-on-insulator structure having an insulating layer of increased permittivity and controlled thickness, which comprises: forming at least one dielectric layer of a high k material on either of a donor substrate or a receiving substrate or on both substrates, with the dielectric layer having a capacitance that is substantially equivalent to that of a layer of silicon dioxide having a thickness of less than or equal to 30 nm, but with the dielectric layer having a thickness that is greater than that of the silicon dioxide layer;forming an embrittlement plane in the donor substrate that defines a thin, useful layer of the donor substrate for transfer to the receiving substrate;bonding the donor and receiving substrates together at a bonding interface with the dielectric layer(s) positioned between the substrates; anddetaching the thin, useful layer by cleaving at the embrittlement plane to form a semiconductor-on-insulator structure that has a buried insulating layer of the high k dielectric material. 14. A method of improving a conventional SOI structure having an ultra-thin buried silicon dioxide layer (UTBOX) with a thickness less than or equal to 30 nm comprising: selecting a thickness for an improved buried insulating layer comprising a high k dielectric material for an improved SOI structure, the thickness of the improved high-k insulating layer being greater than the thickness of the silicon-dioxide insulating layer in the conventional UTBOX SOI structure so that the improved high-k insulating layer and the conventional silicon-dioxide insulating layer have substantially equivalent capacitances; andproducing an improved SOI structure having a buried insulating layer comprising the high k dielectric material, by forming at least one layer of the high k dielectric material on either of a donor substrate or a receiving substrate or on both substrates with the selected thickness,forming an embrittlement plane in the donor substrate that defines a thin, useful layer of the donor substrate for transfer to the receiving substrate;bonding the donor and receiving substrates together at a bonding interface with the dielectric layer(s) positioned between the substrates; anddetaching the thin, useful layer by cleaving at the embrittlement plane to form a semiconductor-on-insulator structure that has a buried insulating layer of the high k dielectric material. 15. The method of claim 1 wherein the thickness of the improved high-k insulating layer is selected to be proportional to the value of permittivity of the high-k material. 16. The method of claim 13 wherein the thickness of the improved high-k insulating layer is selected to be proportional to the value of permittivity of the high-k material. 17. The method of claim 14 wherein the thickness of the improved high-k insulating layer is selected to be proportional to the value of permittivity of the high-k material.
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