초록 ▼

The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of

The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.

대표청구항 ▼

1. A method of forming nanophotovoltaic devices, comprising providing a silicon wafer having a buried oxide layer separating a thin silicon layer from the bulk of the wafer,depositing a first metallic layer on an exposed surface of said thin silicon layer so as to form a schottky barrier junction wi

1. A method of forming nanophotovoltaic devices, comprising providing a silicon wafer having a buried oxide layer separating a thin silicon layer from the bulk of the wafer,depositing a first metallic layer on an exposed surface of said thin silicon layer so as to form a schottky barrier junction with said silicon surface,removing the oxide layer and the bulk portion of the wafer to generate a structure comprising said thin silicon layer and said metallic layer disposed on a surface thereof,depositing a second metallic layer on an exposed surface of said thin silicon layer opposed to said first metallic layer to form an ohmic contact therewith,applying a photoresist to one of said metallic layers,holographically patterning said resist to generate a two-dimensional holographic recording therein,developing said patterned photoresist to generate a pattern of exposed and unexposed portions, andetching away the exposed portions to generate a plurality of nanophotovoltaic devices. 2. The method of claim 1, wherein said step of holographically patterning the resist comprises exposing the photoresist to a one-dimensional holographic line grating,rotating the wafer by 90 degrees, andexposing the photoresist to the line grating. 3. The method of claim 1, wherein said step of holographically patterning the resist comprises: exposing the photoresist to a two-dimensional grating pattern. 4. The method of claim 1, wherein said holographic patterning provides a resolution of about 1000 nm. 5. The method of claim 1, wherein the step of etching away the exposed portions comprises employing a dry etching process. 6. The method of claim 1, further comprising attaching said wafer via said first metallic layer to a support wafer to facilitate performing the processing steps subsequent to said step of depositing a first metallic layer. 7. The method of claim 1, further comprising utilizing a dissolvable adhesive to attach the wafer to the support wafer. 8. The method of claim 7, further comprising removing said photoresist from said generated nanophotovoltaic devices. 9. The method of claim 8, further comprising releasing said nanophotovoltaic devices from said support wafer.