Manufacturing method of substrate provided with semiconductor films
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/76
H01L-021/30
H01L-021/46
출원번호
US-0608246
(2009-10-29)
등록번호
US-8247307
(2012-08-21)
우선권정보
JP-2007-245900 (2007-09-21)
발명자
/ 주소
Yamazaki, Shunpei
Furuno, Makoto
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson, Eric J.
인용정보
피인용 횟수 :
0인용 특허 :
20
초록▼
A plurality of rectangular single crystal semiconductor substrates are prepared. Each of the single crystal semiconductor substrates is doped with hydrogen ions and a damaged region is formed at a desired depth, and a bonding layer is formed on a surface thereof. The plurality of single crystal subs
A plurality of rectangular single crystal semiconductor substrates are prepared. Each of the single crystal semiconductor substrates is doped with hydrogen ions and a damaged region is formed at a desired depth, and a bonding layer is formed on a surface thereof. The plurality of single crystal substrates with the damaged regions formed therein and the bonding layers formed thereover are arranged on a tray. Depression portions for holding the single crystal semiconductor substrates are formed in the tray. With the single crystal semiconductor substrates arranged on the tray, the plurality of single crystal semiconductor substrates with the damaged regions formed therein and the bonding layers formed thereover are bonded to a base substrate. By performing heat treatment and dividing the single crystal semiconductor substrates along the damaged regions, the plurality of single crystal semiconductor layers that are sliced are formed over the base substrate.
대표청구항▼
1. A manufacturing method of an SOI substrate, comprising the steps of: preparing a plurality of single crystal semiconductor substrates each with an upper surface with an insulating layer thereover, a bonding layer over the insulating layer, and a damaged region formed in a region of the single cry
1. A manufacturing method of an SOI substrate, comprising the steps of: preparing a plurality of single crystal semiconductor substrates each with an upper surface with an insulating layer thereover, a bonding layer over the insulating layer, and a damaged region formed in a region of the single crystal semiconductor substrate at a predetermined depth;arranging the plurality of single crystal semiconductor substrates on a tray;bonding a base substrate and the plurality of single crystal semiconductor substrates by contacting between the base substrate and the bonding layers; andgenerating cracks in the damaged regions by heating the plurality of single crystal semiconductor substrates to obtain the base substrate to which a plurality of first single crystal semiconductor layers separated from the plurality of single crystal semiconductor substrates are attached. 2. The manufacturing method of the SOI substrate according to claim 1, wherein hydrogen gas is used as a source gas for forming the damaged region; andwherein the damaged region is formed by exciting the hydrogen gas to generate plasma containing H3+, accelerating an ion species contained in plasma, and then adding the ion species to the single crystal semiconductor substrates. 3. The manufacturing method of the SOI substrate according to claim 1, wherein the plurality of first single crystal semiconductor layers disposed to be in contact with the base substrate are irradiated with a laser beam to form a plurality of second single crystal semiconductor layers. 4. The manufacturing method of the SOI substrate according to claim 1, wherein the base substrate is a glass substrate. 5. A manufacturing method of an SOI substrate, comprising the steps of: preparing a plurality of single crystal semiconductor substrates each with an upper surface with an insulating layer thereover, a bonding layer over the insulating layer, and a damaged region formed in a region of the single crystal semiconductor substrate at a predetermined depth;arranging the plurality of single crystal semiconductor substrates on a tray;bonding a base substrate and the plurality of single crystal semiconductor substrates by contacting between the base substrate and the bonding layers; andgenerating cracks in the damaged regions by heating the plurality of single crystal semiconductor substrates to obtain the base substrate to which a plurality of first single crystal semiconductor layers separated from the plurality of single crystal semiconductor substrates are attached,wherein a formation step of the bonding layer includes forming the bonding layer over the single crystal semiconductor substrate with the insulating layer interposed therebetween; andwherein a formation step of the damaged region includes forming the damaged region in the single crystal semiconductor substrate by exciting a source gas to generate plasma, and then adding an ion species contained in the plasma to the single crystal semiconductor substrate after the formation step of the bonding layer. 6. The manufacturing method of the SOI substrate according to claim 5, wherein hydrogen gas is used as the source gas for forming the damaged region, andwherein the damaged region is formed by exciting the hydrogen gas to generate plasma containing H3+, accelerating the ion species contained in the plasma, and then adding the ion species to the single crystal semiconductor substrates. 7. The manufacturing method of the SOI substrate according to claim 5, wherein the plurality of first single crystal semiconductor layers disposed to be in contact with the base substrate are irradiated with a laser beam to form a plurality of second single crystal semiconductor layers. 8. The manufacturing method of the SOI substrate according to claim 5, wherein the base substrate is a glass substrate. 9. A manufacturing method of an SOI substrate, comprising the steps of: preparing a plurality of single crystal semiconductor substrates each with an upper surface with an insulating layer thereover, a bonding layer over the insulating layer, and a damaged region formed in a region of the single crystal semiconductor substrate at a predetermined depth;arranging the plurality of single crystal semiconductor substrates on a tray;bonding a base substrate and the plurality of single crystal semiconductor substrates by contacting between the base substrate and the bonding layers; andgenerating cracks in the damaged regions by heating the plurality of single crystal semiconductor substrates to obtain the base substrate to which a plurality of first single crystal semiconductor layers separated from the plurality of single crystal semiconductor substrates are attached,wherein a formation step of the damaged region includes forming the damaged region in the single crystal semiconductor substrates by exciting a source gas to generate plasma, and then adding an ion species contained in the plasma to the single crystal semiconductor substrate;wherein a formation step of the insulating layer includes forming at least one insulating layer over the single crystal semiconductor substrate after the formation step of the damaged region; andwherein a formation step of the bonding layer includes forming the bonding layer over the single crystal semiconductor substrate with the insulating layer interposed therebetween after the formation step of the insulating layer. 10. The manufacturing method of the SOI substrate according to claim 9, wherein hydrogen gas is used as the source gas for forming the damaged region; andthe damaged region is formed by exciting the hydrogen gas to generate plasma containing H3+, accelerating the ion species contained in the plasma, and then adding the ion species to the single crystal semiconductor substrates. 11. The manufacturing method of the SOI substrate according to claim 9, wherein the plurality of first single crystal semiconductor layers disposed to be in contact with the base substrate are irradiated with a laser beam to form a plurality of second single crystal semiconductor layers. 12. The manufacturing method of the SOI substrate according to claim 9, wherein the base substrate is a glass substrate.
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