IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0066163
(2006-09-05)
|
등록번호 |
US-8250978
(2012-08-28)
|
우선권정보 |
JP-2005-258631 (2005-09-07); JP-2006-010184 (2006-01-18) |
국제출원번호 |
PCT/JP2006/317524
(2006-09-05)
|
§371/§102 date |
20080307
(20080307)
|
국제공개번호 |
WO2007/029682
(2007-03-15)
|
발명자
/ 주소 |
- Mukunoki, Hirotaka
- Maeda, Shigeru
- Taguchi, Hiroki
|
출원인 / 주소 |
- Nippon Kayaku Kabushiki Kaisha
|
대리인 / 주소 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
|
인용정보 |
피인용 횟수 :
2 인용 특허 :
10 |
초록
▼
The invention provides a semiconductor bridge, an igniter, and a gas generator each of which satisfies a high-speed responsiveness required of, for example, an automotive side inflator. The semiconductor bridge includes a bridge part heated by being supplied with a current. The bridge part is dispos
The invention provides a semiconductor bridge, an igniter, and a gas generator each of which satisfies a high-speed responsiveness required of, for example, an automotive side inflator. The semiconductor bridge includes a bridge part heated by being supplied with a current. The bridge part is disposed on a substrate. The bridge part includes a first layer and an ignition bridge layer. The first layer is formed on the substrate and has insulating properties. The ignition bridge layer serves as a second layer disposed on the first layer. The width of the bridge part at the first layer and the width of the bridge part at the second layer are substantially equal to each other. A space is provided around the bridge part. With this structure, the diffusion of current and heat into the substrate can be restricted to the minimum level, and the ignition time can be quickened as an ignition characteristic. Each of the igniter and the gas generator includes the semiconductor bridge.
대표청구항
▼
1. A semiconductor bridge comprising: a bridge part disposed in contact with a substrate and having a narrowed section above the substrate,the bridge part heated by applying a current along a crosswise direction through a narrowed section of the bridge part and formed on the substrate and above the
1. A semiconductor bridge comprising: a bridge part disposed in contact with a substrate and having a narrowed section above the substrate,the bridge part heated by applying a current along a crosswise direction through a narrowed section of the bridge part and formed on the substrate and above the substrate,the narrowed section including a first layer and an ignition bridge layer,the first layer being formed on the substrate, having insulating properties, and containing SiO2,the ignition bridge layer being formed on the first layer and serving as a second layer above the first layer and above the substrate;wherein a width in a direction perpendicular to the crosswise direction of the bridge part at the first layer and a width in a direction perpendicular to the crosswise direction of the bridge part at the second layer are substantially equal to each other,wherein a side face and an upper face of the bridge part are exposed outwardly,wherein the first layer has a thermal conductivity of 50 W/m·K or less, an electrical resistivity of 106 Ω·m or more in room temperature, and a thickness between 0.2 and 2.0 μm, andwherein the substrate is made of silicon, a surface of the substrate is provided with an oxide film, and the first layer is an oxide film of SiO2. 2. The semiconductor bridge according to claim 1, wherein the bridge part has a two-layer structure. 3. The semiconductor bridge according to claim 1, wherein the second layer has a thickness of 0.02 microns to 3 microns. 4. The semiconductor bridge according to claim 1, wherein the second layer contains Ni and Cr. 5. An igniter including the semiconductor bridge of claim 1, the semiconductor bridge serving as an ignition element. 6. A gas generator including the igniter of claim 5. 7. An igniter comprising: a cup body;a plurality of electrode pins;a header with which an opening of the cup body is covered, the header holding the plurality of electrode pins insulated from each other;the semiconductor bridge of claim 1, the semiconductor bridge being in contact with an ignition compound provided in the cup body, the semiconductor bridge being electrically connected to the electrode pins, the semiconductor bridge being ignited by being supplied with a current from outside through the plurality of electrode pins; anda capacitor electrically connected to a pair of electrode pins among the plurality of electrode pins at the outside of the cup body, the pair of electrode pins being electrically parallel to the semiconductor bridge. 8. An igniter comprising: a cup body;a plurality of electrode pins;a header with which an opening of the cup body is covered, the header holding the plurality of electrode pins insulated from each other;the semiconductor bridge of claim 1, the semiconductor bridge being in contact with an ignition compound provided in the cup body, the semiconductor bridge being electrically connected to the electrode pins, the semiconductor bridge being ignited by being supplied with a current from outside through the plurality of electrode pins;a base provided integrally with a pair of electrode pins among the plurality of electrode pins, the pair of electrode pins being electrically parallel to the semiconductor bridge, the base being disposed outside the cup body and between the pair of electrode pins to maintain a distance between the pair of electrode pins; anda capacitor positioned on the base and electrically connected to the pair of electrode pins. 9. An igniter comprising: a cup body;a plurality of electrode pins;a header with which an opening of the cup body is covered, the header holding the plurality of electrode pins insulated from each other;the semiconductor bridge of claim 1, the semiconductor bridge being in contact with an ignition compound provided in the cup body, the semiconductor bridge being electrically connected to the electrode pins, the semiconductor bridge being ignited by being supplied with a current from outside through the plurality of electrode pins;a flexible base disposed outside the cup body and between a pair of electrode pins among the plurality of electrode pins, the pair of electrode pins being electrically parallel to the semiconductor bridge; anda capacitor positioned on the base and electrically connected to the pair of electrode pins. 10. A gas generator including the igniter of any one of claims 7 to 9. 11. A semiconductor bridge comprising: a bridge part disposed in contact with a substrate and having a narrowed section above the substrate,the bridge part ignited by applying a current along a crosswise direction through a narrowed section of the bridge part above the substrate,the narrowed section including a first layer formed on a substrate and a second layer formed on the first layer, above the first layer, and above the substrate;said first layer having insulating properties and a thickness between 0.2 and 2.0 μm; andsaid second layer being made of a resistive material to conduct said current in said narrowed section of the bridge part above the substrate,wherein the first layer and the second layer have the same width in a direction perpendicular to the crosswise direction of the bridge part,andwherein the substrate is made of silicon, a surface of the substrate is provided with an oxide film, and the first layer is an oxide film of SiO2.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.