Methods are provided for laser patterning a partial depth surface portion of a glass body by controlling the amount of stress induced in the glass body. A laser beam is directed along an impinged path on the surface portion of the glass body to heat the glass body to form a swell. The glass body is
Methods are provided for laser patterning a partial depth surface portion of a glass body by controlling the amount of stress induced in the glass body. A laser beam is directed along an impinged path on the surface portion of the glass body to heat the glass body to form a swell. The glass body is then cooled and etched. The surface portion of the glass body is heated above the strain point at a heating rate HR to form a swell. The heating rate HR is a function of a target temperature T and an exposure time of the output laser beam. The exposure time is controlled to reach a target temperature above the softening point of the glass body and does not require a power density that would lead to laser ablation of the surface portion. The surface portion is cooled below the strain point to induce regions of localized stress. The unablated surface portion is etched while in a state of laser-induced localized stress to form a patterned glass body.
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1. A method for laser patterning a partial depth surface portion of a glass body, said method comprising: providing a laser, said laser having a laser output beam at a laser wavelength λ;providing a glass body having an optical density at of at least 1.5 per cm at said wavelength λ;directing said la
1. A method for laser patterning a partial depth surface portion of a glass body, said method comprising: providing a laser, said laser having a laser output beam at a laser wavelength λ;providing a glass body having an optical density at of at least 1.5 per cm at said wavelength λ;directing said laser output beam along an impinged path on the surface portion of said glass body to form a swell in said surface portion of said glass body by heating said surface portion of said glass body;cooling said heated surface portion of said glass body; andetching said surface portion of said glass body, wherein said surface portion of said glass body is heated to a target temperature T above a strain point of said glass body at a heating rate HR to form said swell along said impinged path of said laser output beam,said heating rate HR is a function of a target temperature T and an exposure time of said laser output beam along said impinged path and is controlled such that an exposure time required to reach a target temperature above a softening point of said glass does not require a power density that would lead to laser ablation of said surface portion of said glass body along said impinged path,said surface portion of said glass body is cooled to a temperature below said strain point of said glass body to induce regions of localized stress of at least 300 psi in said unablated surface portion of said glass body along said impinged path of said laser output beam and create a pattern of localized laser-induced stress in said glass body,said regions of induced localized stress penetrate said glass body below said surface portion of said glass body and have larger dimensions than the swell formed in said surface portion of said glass body along the path of the laser output beam, andsaid unablated surface portion is etched in said state of induced localized stress to form a patterned glass body. 2. The method for laser patterning a partial depth surface portion of a glass body according to claim 1, wherein said target temperature T is greater than 800° C. 3. The method for laser patterning a partial depth surface portion of said glass body of claim 1, wherein said impinged path on the surface portion of said glass body is heated at a rate between 500° C./sec to 5000° C./sec. 4. The method for laser patterning a partial depth surface portion of a glass body of claim 1 wherein said heated surface portion is cooled at a rate of 15000° C./sec to 100000° C./sec. 5. The method for laser patterning a partial depth surface portion of a glass body of claim 1, wherein said surface portion of said glass body is cooled to induce regions of localized stress in a range of 400 psi to 15000 psi. 6. The method for laser patterning a partial depth surface portion of a glass body of claim 1, wherein the glass body is not annealed between said directing step and said etching step. 7. The method for laser patterning a partial depth surface portion of a glass body of claim 1, wherein said laser is a continuous wave laser, a quasi CW laser with a repetition rate greater than 1 kHz, a diode laser, a Nd:Yag laser, or a CO2 laser. 8. The method for laser patterning a partial depth surface portion of a glass body of claim 1, wherein said laser is a single pulse laser. 9. The method for laser patterning a partial depth surface portion of a glass body of claim 1, wherein said exposure time is greater than 50 milliseconds. 10. The method for laser patterning a partial depth surface portion of a glass body according to claim 1, said method further comprises: providing a laser output focusing lens for focusing said laser output beam; anddirecting said laser output beam through said focusing lens to produce a focused laser output beam proximate said glass body so as to expose and heat said glass body along said impinged path on said surface portion of said glass body proximate to said focused laser output. 11. The method for laser patterning a partial depth surface portion of a glass body according to claim 1, wherein said laser output beam is directed along said impinged path at a rate of at least 1 mm/sec. 12. The method for laser patterning a partial depth surface portion of a glass body according to claim 11, wherein said laser output beam is directed along said impinged path at a rate of 1 to 20 mm/sec. 13. The method for laser patterning a partial depth surface portion of a glass body according to claim 1, wherein said heating and cooling induce stress that is sufficient to cause said pattern of localized laser induced stress to etch at a faster etching rate than the area around said swell. 14. The method for laser patterning a partial depth surface portion of a glass body according to claim 13, wherein said heating and cooling induce stress that is sufficient to cause said pattern of localized laser induced stress to etch at least 10 times faster than an area around said swell. 15. The method for laser patterning a partial depth surface portion of a glass body according to claim 13, wherein said heating and cooling induce stress that is sufficient to cause said pattern of localized laser induced stress to etch at a rate of at least 5 mm/min. 16. A method for laser patterning a partial depth surface portion of a glass body, said method comprising: providing a pulse laser, said laser having a laser output beam at a laser wavelength λ, wherein 266 nm800° C., andsaid impinged path on the surface portion of said glass body is heated at a rate between 500° C./sec to 5000° C./sec;cooling said heated surface portion of said glass body, wherein said surface portion of said glass body is cooled to a temperature below said strain point of said glass body to induce regions of localized stress of at least 300 psi in said unablated surface portion of said glass body along said impinged path of said laser output beam and create a pattern of localized laser-induced stress in said glass body, andsaid heated surface portion is cooled at a rate of 15000° C./sec to 100000° C./sec; andetching said surface portion of said glass body, wherein said regions of induced localized stress penetrate said glass body below said surface portion of said glass body and have larger dimensions than the swell formed in said surface portion of said glass body along the path of the laser output beam,said unablated surface portion is etched in said state of induced localized stress to form a patterned glass body,said HR and cooling induce stress that is sufficient to cause said pattern of localized laser induced stress, etches at a faster etching rate than the area around said swell, andsaid regions of induced localized stress have a stress level in a range of 400 psi to 15000 psi.
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