Light sensor with intensity and direction detection
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G01B-011/26
G01J-001/42
출원번호
US-0811252
(2008-12-26)
등록번호
US-8264678
(2012-09-11)
국제출원번호
PCT/IB2008/055547
(2008-12-26)
§371/§102 date
20100701
(20100701)
국제공개번호
WO2009/087531
(2009-07-16)
발명자
/ 주소
Souchkov, Vitali
Van Dalen, Rob
O'Mathuna, Padraig
출원인 / 주소
NXP B.V.
인용정보
피인용 횟수 :
3인용 특허 :
7
초록▼
A light sensor and light sensing system to detect an intensity of incident light and an angle of incidence of the incident light. The light sensor includes a dielectric layer, a plurality of photo detectors coupled relative to the dielectric layer, and a plurality of stacks of opaque slats embedded
A light sensor and light sensing system to detect an intensity of incident light and an angle of incidence of the incident light. The light sensor includes a dielectric layer, a plurality of photo detectors coupled relative to the dielectric layer, and a plurality of stacks of opaque slats embedded within the dielectric layer. The dielectric layer is substantially transparent to the incident light. The photo detectors detect the incident light through the dielectric layer. The stacks of opaque slats are approximately parallel to an interface between the dielectric layer and the photo detectors. The stacks of opaque slats define light apertures between adjacent stacks of opaque slats. At least some of the stacks of opaque slats are arranged at a non-zero angle relative to other stacks of the opaque slats.
대표청구항▼
1. A light sensor for detecting an intensity of incident light and an angle of incidence of the incident light, the light sensor comprising: a dielectric layer, wherein the dielectric layer is substantially transparent to the incident light;a plurality of photo detectors coupled relative to the diel
1. A light sensor for detecting an intensity of incident light and an angle of incidence of the incident light, the light sensor comprising: a dielectric layer, wherein the dielectric layer is substantially transparent to the incident light;a plurality of photo detectors coupled relative to the dielectric layer, the photo detectors configured to detect the incident light through the dielectric layer; anda plurality of stacks of opaque slats embedded within the dielectric layer approximately parallel to an interface between the dielectric layer and the photo detectors, the plurality of stacks of opaque slats configured to define tapered light apertures between adjacent stacks of opaque slats; wherein the said apertures are tapered monotonically and along a direction perpendicular to the light sensitive surface. 2. The light sensor of claim 1, wherein the plurality of stacks of opaque slats further comprises: a first pair of stacks of opaque slats which are substantially parallel to each other; anda second pair of stacks of opaque slats which are substantially parallel to each other and which are substantially orthogonal to the first pair of stacks of opaque slats. 3. The light sensor of claim 1, wherein the opaque slats within at least one of the stacks of opaque slats have different widths and are arranged to form a tapered stack, wherein a cross-section of the tapered stack defines an asymmetrical taper. 4. The light sensor of claim 1, wherein the plurality of photo detectors comprise segmented photo detectors, and the light apertures defined by the stacks of opaque slats are aligned with the segmented photo detectors. 5. The light sensor of claim 4, wherein the segmented photo detectors comprise spectrometer photo detectors. 6. The light source of claim 1, wherein the opaque slats comprise metal slats or polysilicon slats. 7. The light source of claim 1, wherein at least one stack of opaque slats is configured to shadow incident light at an angle of incidence from reaching a photo detector adjacent to the corresponding stack of opaque slats. 8. A light sensing system, comprising: a light sensor to detect incident light, the light sensor comprising: a dielectric layer, wherein the dielectric layer is substantially transparent to the incident light;a plurality of photo detectors coupled relative to the dielectric layer, the photo detectors configured to detect the incident light through the dielectric layer; anda plurality of stacks of opaque slats embedded within the dielectric layer approximately parallel to an interface between the dielectric layer and the photo detectors, the plurality of stacks of opaque slats configured to define tapered light apertures between adjacent stacks of opaque slats; anda light signal processor coupled to the light sensor, the light signal processor configured to receive a photo detector signal from at least one of the plurality of photo detectors and to compute an intensity of the incident light based on the photo detector signal associated with the incident light detected by the corresponding photo detector; wherein the said apertures are tapered monotonically and along a direction perpendicular to the light sensitive surface. 9. The light sensing system of claim 8, wherein at least some of the stacks of opaque slats are arranged orthogonally to other stacks of the opaque slats. 10. The light sensing system of claim 9, wherein the light signal processor is further configured to compute an azimuth angle for the incident light signal based on photo detector signals from two or more of the plurality of photo detectors. 11. The light sensing system of claim 10, wherein the light signal processor is further configured to compute an angle of incidence for the incident light signal based on photo detector signals from two or more of the plurality of photo detectors. 12. The light sensing system of claim 11, wherein the light signal processor is further configured to derive the intensity of the incident light based on the azimuth angle computation and the angle of incidence computation. 13. The light sensing system of claim 11, wherein the computed intensity of the incident light is representative of an intensity of the incident light outside of the dielectric layer, and the computed angle of incidence is representative of an angle of incidence of the incident light outside of the dielectric layer. 14. The light sensing system of claim 8, further comprising: a light source configured to generate a light for an electronic device; anda power source coupled between the light signal processor and the light source, the power source configured to adjust an output characteristic of the light source in response to a computation for the incident light by the light signal processor. 15. The light sensing system of claim 8, further comprising a memory device coupled to the light signal processor, the memory device configured to store an algorithm for a computation by the light signal processor for the incident light. 16. The light sensing system of claim 8, wherein electronics for the light sensor are implemented on a chip and electronics for the light signal processor are implemented on the same chip. 17. A method of making a light sensor, the method comprising: forming a plurality of segmented photo detectors on a substrate;forming a dielectric layer to interface with the plurality of segmented photo detectors; andembedding a plurality of stacks of opaque slats within the dielectric layer to define corresponding tapered light apertures between adjacent pairs of stacks of opaque slats; wherein the said apertures are tapered monotonically and along a direction perpendicular to the light sensitive surface. 18. The method of claim 17, further comprising: arranging the plurality of stacks of opaque slats so that at least some of the stacks of opaque slats are oriented in parallel to other stacks of opaque slats, and further stacks of opaque slats are oriented at a non-zero angle relative to the parallel stacks of opaque slats, wherein each of the stacks of opaque slats comprises a plurality of opaque slats in a tapered stack which tapers away from the plurality of photo detectors along a substantially perpendicular direction relative to a surface of the plurality of photo detectors, each of the opaque slats within each stack has a different width from the other opaque slats within the same stack and the opaque slats of each stack are arranged to form an asymmetrically tapered stack. 19. The method of claim 17, further comprising: combining the light sensor and associated signal processing circuitry on a single chip, wherein the associated signal processing circuit comprises: circuitry to implement an algorithm to compute an angle of inclination of an incident light beam;circuitry to implement an algorithm to compute an azimuth angle of the incident light beam; andcircuitry to implement an algorithm to compute an intensity measurement of the incident light beam. 20. The method of claim 19, wherein the associated signal processing circuitry further comprises: circuitry to implement an algorithm to compute an integrated flux of the incident light beam; andcircuitry to implement an algorithm to compute a beam spectrum of the incident light beam based on direction reconstruction of the incident light beam and a transfer function of the computed intensity of the incident light beam.
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이 특허에 인용된 특허 (7)
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