IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0415043
(2012-03-08)
|
등록번호 |
US-8268702
(2012-09-18)
|
우선권정보 |
JP-2002-378803 (2002-12-27) |
발명자
/ 주소 |
- Takayama, Toru
- Maruyama, Junya
- Goto, Yuugo
- Ohno, Yumiko
- Akiba, Mai
|
출원인 / 주소 |
- Semiconductor Energy Laboratory Co., Ltd.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
6 인용 특허 :
89 |
초록
▼
It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin
It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.
대표청구항
▼
1. A method for manufacturing an article comprising: forming a metal film over a first substrate;forming an oxide film over the metal film wherein a metal oxide film is formed between the metal film and the oxide film;forming a base film over the oxide film;forming a semiconductor element over the b
1. A method for manufacturing an article comprising: forming a metal film over a first substrate;forming an oxide film over the metal film wherein a metal oxide film is formed between the metal film and the oxide film;forming a base film over the oxide film;forming a semiconductor element over the base film;separating the semiconductor element and the base film from the first substrate; andafter separating the semiconductor element and the base film, attaching the semiconductor element to a second substrate, wherein the second substrate is a plastic substrate. 2. The method for manufacturing the article according to claim 1, wherein the metal film comprises tungsten. 3. The method for manufacturing the article according to claim 1, wherein the oxide film is formed without being exposed to air after the metal film is formed. 4. The method for manufacturing the article according to claim 1, wherein a step of separating is performed by physical means. 5. The method for manufacturing the article according to claim 1, wherein the first substrate is a glass substrate. 6. The method for manufacturing the article according to claim 1, wherein the plastic substrate comprises polyimide. 7. The method for manufacturing the article according to claim 1, wherein the second substrate is a printed wiring board. 8. The method for manufacturing the article according to claim 1, wherein the article comprises a microprocessor, a memory, or a power source circuit. 9. A method for manufacturing an article comprising: forming a metal film over a first substrate;forming an oxide film over the metal film wherein a metal oxide film is formed between the metal film and the oxide film;forming a base film over the oxide film;forming a display device and a semiconductor element over the base film;separating the display device, the semiconductor element, and the base film from the first substrate; andafter separating the semiconductor element and the base film, attaching the display device and the semiconductor element to a second substrate, wherein the second substrate is a plastic substrate. 10. The method for manufacturing the article according to claim 9, wherein the metal film comprises tungsten. 11. The method for manufacturing the article according to claim 9, wherein the oxide film is formed without being exposed to air after the metal film is formed. 12. The method for manufacturing the article according to claim 9, wherein a step of separating is performed by physical means. 13. The method for manufacturing the article according to claim 9, wherein the first substrate is a glass substrate. 14. The method for manufacturing the article according to claim 9, wherein the plastic substrate comprises polyimide. 15. The method for manufacturing the article according to claim 9, wherein the display device is a light emitting device. 16. A method for manufacturing an article comprising: forming a metal film over a first substrate;forming an oxide film over the metal film wherein a metal oxide film is formed between the metal film and the oxide film;forming a base film over the oxide film;forming a semiconductor element comprising a polycrystalline semiconductor over the base film;separating the semiconductor element and the base film from the first substrate; andafter separating the semiconductor element and the base film, attaching the semiconductor element to a second substrate, wherein the second substrate is a plastic substrate. 17. The method for manufacturing the article according to claim 16, wherein the metal film comprises tungsten. 18. The method for manufacturing the article according to claim 16, wherein the oxide film is formed without being exposed to air after the metal film is formed. 19. The method for manufacturing the article according to claim 16, wherein a step of separating the semiconductor element is performed by physical means. 20. The method for manufacturing the article according to claim 16, wherein the first substrate is a glass substrate. 21. The method for manufacturing the article according to claim 16, wherein the plastic substrate comprises polyimide. 22. The method for manufacturing the article according to claim 16, wherein the second substrate is a printed wiring board. 23. The method for manufacturing the article according to claim 16, wherein the article comprises a microprocessor, a memory, or a power source circuit. 24. A method for manufacturing an article comprising: forming a metal film over a first substrate;forming an oxide film over the metal film wherein a metal oxide film is formed between the metal film and the oxide film;forming a base film over the oxide film;forming a display device and a semiconductor element comprising a polycrystalline semiconductor over the base film;separating the display device, the semiconductor element, and the base film from the first substrate; andafter separating the semiconductor element and the base film, attaching the display device and the semiconductor element to a second substrate, wherein the second substrate is a plastic substrate. 25. The method for manufacturing the article according to claim 24, wherein the metal film comprises tungsten. 26. The method for manufacturing the article according to claim 24, wherein the oxide film is formed without being exposed to air after the metal film is formed. 27. The method for manufacturing the article according to claim 24, wherein a step of separating the semiconductor element is performed by physical means. 28. The method for manufacturing the article according to claim 24, wherein the first substrate is a glass substrate. 29. The method for manufacturing the article according to claim 24, wherein the plastic substrate comprises polyimide. 30. The method for manufacturing the article according to claim 24, wherein the display device is a light emitting device.
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