초록 ▼

A laser energy detector may include at least one photodetector device formed on a semiconductor substrate. The photodetector device may have an active area effective to detect laser energy at a laser wavelength. The active area of the laser energy detector may be substantially transparent for a firs

A laser energy detector may include at least one photodetector device formed on a semiconductor substrate. The photodetector device may have an active area effective to detect laser energy at a laser wavelength. The active area of the laser energy detector may be substantially transparent for a first wavelength band within an infrared portion of the electromagnetic spectrum.

대표청구항 ▼

1. A laser energy detector, comprising: a photodetector formed on a semiconductor substrate, the semiconductor substrate having a front side and an opposing back side, the photodetector including an active area effective to detect laser energy within a first wavelength band, wherein the active area

1. A laser energy detector, comprising: a photodetector formed on a semiconductor substrate, the semiconductor substrate having a front side and an opposing back side, the photodetector including an active area effective to detect laser energy within a first wavelength band, wherein the active area of the photodetector is substantially transparent for a second wavelength band within an infrared portion of the electromagnetic spectrum; anda back-side coating disposed on the back side of the semiconductor substrate at least over the active area, wherein the back-side coating is reflective for the first wavelength band and antireflective for the second wavelength band, the back-side coating including a plurality of alternating layers of a low refractive index material and a high refractive index material, the low refractive index material being one of CeF3 and YbF3 and the high refractive index material being one of ZnS and ZnSe. 2. The laser energy detector of claim 1, further comprising: a front-side coating disposed on the front side of the semiconductor substrate at least over the active area,wherein the front-side coating is antireflective for the first wavelength band and antireflective for the second wavelength band. 3. The laser energy detector of claim 1, wherein the photodetector further comprises: four quadrant photodetector devices disposed to detect laser radiation incident upon respective quadrants of the active area. 4. The laser energy detector of claim 1, wherein the substrate is a silicon wafer, andthe first wavelength band includes 1.06 microns. 5. The laser energy detector of claim 4, wherein the second wavelength band is within the portion of the infrared spectrum from 1.5 microns to 12 microns. 6. The laser energy detector of claim 5, wherein the second wavelength band is one of 1.5-2.5 microns, 3-5 microns and 8-12 microns. 7. A multimode seeker comprising: a focal plane array detector to detect electromagnetic energy within a second wavelength band within an infrared portion of the electromagnetic spectrum; andan imaging optical system that forms an image of a scene on the focal plane array detector; anda laser energy detector disposed between the imaging optical system and the infrared focal plane array detector, the laser energy detector comprising:at least one photodetector formed on a semiconductor substrate, the photodetector having an active area effective to detect laser energy within a first wavelength,wherein the active area is substantially transparent for the second wavelength band. 8. The multimode seeker of claim 7, wherein the imaging optical system softly focuses laser energy from the scene onto the laser energy detector. 9. The multimode seeker of claim 8, wherein the imaging optical system focuses laser energy from a point in the scene to a spot, at the laser energy detector, having a spot size not less than a predetermined minimum value. 10. The multimode seeker of claim 9, wherein the imaging optical system includes at least one surface feature for controlling the spot size at the laser energy detector. 11. The multimode seeker of claim 7, wherein the imaging optical system includes at least one surface feature for color correction of the image at the focal plane array detector. 12. The multimode seeker of claim 7, wherein the semiconductor substrate has a front side and an opposing back side, the laser energy detector further comprising: a back-side coating disposed on the back side of the semiconductor substrate at least over the active area, wherein the back-side coating is reflective for the first wavelength band and antireflective for the second wavelength band, the back-side coating including a plurality of alternating layers of a low refractive index material and a high refractive index material, the low refractive index material being one of CeF3 and YbF3 and the high refractive index material being one of ZnS and ZnSe. 13. An integrated semi-active laser (SAL) seeker and imaging infrared (IIR) seeker, comprising: an optical system that defines essentially the same optical aperture for the SAL seeker and the IIR seeker;a infrared focal plane array detector to detect electromagnetic energy within an predetermined wavelength band, the infrared focal plane array detector disposed at an image plane of the optical system; anda laser energy detector disposed along an optical path between the imaging optical system and the infrared focal plane array detector,wherein an active area of the laser energy detector is substantially transparent for the predetermined wavelength band. 14. The integrated semi-active laser (SAL) seeker and imaging infrared (IIR) seeker of claim 13, wherein the optical system forms an image of a scene on the focal plane array detector. 15. The integrated semi-active laser (SAL) seeker and imaging infrared (IIR) seeker of claim 14, wherein the optical system softly focuses laser energy from the scene onto the laser energy detector. 16. The integrated semi-active laser (SAL) seeker and imaging infrared (IIR) seeker of claim 15, wherein the optical system focuses laser energy from a point in the scene to a spot, at the laser energy detector, having a spot size not less than a predetermined minimum value. 17. The integrated semi-active laser (SAL) seeker and imaging infrared (IIR) seeker of claim 16, wherein the optical system includes at least one surface feature for controlling the spot size at the laser energy detector. 18. The integrated semi-active laser (SAL) seeker and imaging infrared (IIR) seeker of claim 14, wherein the imaging optical system includes at least one surface feature for color correction of the image at the focal plane array detector. 19. The integrated semi-active laser (SAL) seeker and imaging infrared (IIR) seeker of claim 13, wherein the laser energy detector includes a back-side coating disposed on a back side of the active area, the back-side coating being antireflective for the predetermined wavelength band and including a plurality of alternating layers of a low refractive index material and a high refractive index material, the low refractive index material being one of CeF3 and YbF3 and the high refractive index material being one of ZnS and ZnSe.