초록 ▼

The present invention provides an all-solid-state type reflection light controllable electrochromic device having a buffer layer, and the constitution thereof comprises an all-solid-state reflective dimming electrochromic device in which a transparent conductive film layer, an ion storage layer, a s

The present invention provides an all-solid-state type reflection light controllable electrochromic device having a buffer layer, and the constitution thereof comprises an all-solid-state reflective dimming electrochromic device in which a transparent conductive film layer, an ion storage layer, a solid electrolyte layer, a buffer layer, catalyst layer, and a reflective light controllable layer of a magnesium alloy thin film, in particular a multilayer thin film that uses a magnesium-nickel alloy, magnesium-titanium alloy or magnesium-niobium alloy, are formed on a transparent base that uses a glass or resin sheet, and a method for manufacturing the device, and an optical switchable component that incorporates the reflective light controllable electrochromic device, and according to the present invention, a reflective light controllable electrochromic device having a novel multilayer structure can be provided that enables high transmittance when it is transparent and enables switching in a short time over a wide area.

대표청구항 ▼

1. An all-solid-state type reflective dimming electrochromic device comprising a reflection controllable device in which a multilayer thin film is formed on a transparent base, the multilayer film has a multilayer structure in which at least a transparent conductive film layer, an ion storage layer,

1. An all-solid-state type reflective dimming electrochromic device comprising a reflection controllable device in which a multilayer thin film is formed on a transparent base, the multilayer film has a multilayer structure in which at least a transparent conductive film layer, an ion storage layer, a solid electrolyte layer, a buffer layer, a catalyst layer and a reflective dimming layer of a magnesium alloy thin film are formed on the transparent base,wherein the buffer layer has a metal thin film formed on the solid electrolyte layer, andthe metal thin film of the buffer layer is formed of aluminum metal, tantalum metal, or titanium metal. 2. The all-solid-state type reflective dimming electrochromic device according to claim 1, wherein the transparent base is a glass or resin sheet. 3. The all-solid-state type reflective dimming electrochromic device according to claim 1, wherein a reflective dimming action is produced by applying a voltage and/or current between the transparent conductive film layer and the reflective dimming layer. 4. The all-solid-state type reflective dimming electrochromic device according to claim 1, wherein a transition metal oxide thin film is formed as the ion storage layer on the transparent base coated with a transparent conductive film. 5. The all-solid-state type reflective dimming electrochromic device according to claim 1, wherein a transparent metal oxide thin film is formed as the solid electrolyte layer on the ion storage layer. 6. The all-solid-state type reflective dimming electrochromic device according to claim 5, wherein the density of the metal oxide thin film of the solid electrolyte layer is from 2.8 g/cm3 to 4.3 g/cm3. 7. The all-solid-state type reflective dimming electrochromic device according to claim 6, wherein the metal oxide of the solid electrolyte layer is tantalum oxide (Ta2O5) or zirconium oxide. 8. The all-solid-state type reflective dimming electrochromic device according to claim 1, wherein a layer containing palladium, platinum, silver or alloy thereof is formed as a catalyst layer on the buffer layer. 9. The all-solid-state type reflective dimming electrochromic device according to claim 1, wherein a magnesium-nickel, magnesium-titanium or magnesium-niobium alloy thin film is formed as a reflective dimming layer on the catalyst layer. 10. The all-solid-state type reflective dimming electrochromic device according to claim 9, wherein the alloy of the reflective dimming layer is MgNix (wherein, 0.1≦x≦0.5), MgTix (wherein, 0.1≦x≦0.5) or MgNbx (wherein, 0.3≦x≦0.6). 11. The all-solid-state type reflective dimming electrochromic device according to claim 1, wherein the ion storage layer or the reflective dimming layer is hydrated during manufacturing thereof. 12. The all-solid-state type reflective dimming electrochromic device according to claim 1, wherein the transparent conductive film layer is present on the outside of the reflective dimming layer. 13. The all-solid-state type reflective dimming electrochromic device according to claim 1, wherein the surface resistance of the transparent conductive film layer is less than 100 Ω/□. 14. The all-solid-state type reflective dimming electrochromic device according to claim 1, wherein the transparent conductive film layer contains at least one type of metal thin film, oxide or organic compound having light transmittance of higher than 70%. 15. An optical switchable component that incorporates the all-solid-state type reflective dimming electrochromic device according to claim 1 therein. 16. A method for manufacturing an all-solid-state type reflective dimming electrochromic device in which a multilayer thin film is formed on a transparent base, the method comprising: forming a transparent conductive film layer, an ion storage layer, a solid electrolyte layer, a buffer layer and a catalyst layer on the base; and forming thereon a reflective dimming layer of a magnesium-nickel alloy, magnesium-titanium alloy or magnesium-niobium alloy thin film,wherein the buffer layer has a metal thin film formed on the solid electrolyte layer, andthe metal thin film of the buffer layer is formed of aluminum metal, tantalum metal, or titanium metal.