초록 ▼

An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1 −2 ±6} facets. The laser has high gain, low threshold currents, capability for extended operat

An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1 −2 ±6} facets. The laser has high gain, low threshold currents, capability for extended operation at high current densities, and can be manufactured with improved yield. The laser is useful for optical data storage, projection displays, and as a source for general illumination.

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1. A laser diode device comprising: a wurtzite-structure crystalline substrate containing a gallium species;an active epitaxial layer within the wurtzite-structure; andat least one end facet for edge emission coupled to the active epitaxial layer, the end facet being a cleaved surface within ±5 degr

1. A laser diode device comprising: a wurtzite-structure crystalline substrate containing a gallium species;an active epitaxial layer within the wurtzite-structure; andat least one end facet for edge emission coupled to the active epitaxial layer, the end facet being a cleaved surface within ±5 degrees of a {1 1 −2 6} or a {1 1 −2 −6} crystallographic orientation;wherein the orientation of the wurtzite-structure crystalline substrate is within ±5 degrees of a {8 0 −8 7} plane, a {8 0 −8 −7} plane, a {4 4 −8 7} plane, or a {4 4 −8 −7} plane. 2. The laser diode device of claim 1, wherein the wurtzite-structure crystalline substrate comprises the gallium species and a nitrogen species. 3. The laser diode device of claim 1, wherein the active epitaxial layer comprises a single quantum well with a thickness between about 1 and about 30 nanometers. 4. The laser diode device of claim 3, wherein the active epitaxial layer comprises a single quantum well with a thickness between about 5 and about 15 nanometers. 5. The laser diode device of claim 1, wherein the active epitaxial layer comprises a multiple quantum well, wherein each quantum well has a layer thickness between about 1 and about 30 nanometers. 6. The laser diode device of claim 5, wherein the active epitaxial layer comprises a multiple quantum well, wherein each quantum well has a layer thickness between about 5 and about 15 nanometers. 7. The laser diode device of claim 2, wherein the device structure is free of AlGaN cladding layers. 8. The laser diode device of claim 2, wherein the device structure comprises guiding layers comprising InGaN. 9. The laser diode device of claim 1, wherein the cleaved facet is characterized by a root-mean-square surface roughness less than about 1 nm. 10. The laser diode device of claim 9, wherein the cleaved facet is characterized by a root-mean-square surface roughness less than about 0.5 nm. 11. The laser diode device of claim 9, wherein the cleaved facet is characterized by a root-mean-square surface roughness less than about 0.2 nm. 12. The laser diode device of claim 9, wherein the cleaved facet is characterized by a root-mean-square surface roughness less than about 0.1 nm. 13. The laser diode device of claim 9, wherein the cleaved facet is characterized by a root-mean-square surface roughness less than about 0.05 nm. 14. A laser device comprising: a gallium nitride or aluminum nitride containing crystalline material;a laser cavity formed within a portion of the gallium nitride or aluminum nitride containing crystalline material, the laser cavity being characterized by a length extending from a first end to a second opposite end;a first facet provided on the first end;a second facet provided on the second end;wherein the length of the laser cavity is along a direction that is approximately 28.5 degrees from a [0001] direction of the gallium nitride or aluminum nitride containing crystalline material. 15. The device of claim 14 wherein the gallium nitride containing crystalline material is gallium nitride. 16. The device of claim 14 wherein the aluminum nitride containing crystalline material is aluminum nitride. 17. The device of claim 14 wherein the gallium nitride containing crystalline material is aluminum gallium nitride. 18. The device of claim 14 wherein the orientation of the first facet and the second facet is within ±5 degrees of a {1 1 −2 6} or a {1 1 −2 −6} crystallographic plane of the gallium nitride or aluminum nitride containing crystalline material. 19. The device of claim 14 further comprising an active region within the laser cavity. 20. The device of claim 14 wherein the first facet is substantially parallel to the second facet. 21. A semiconductor crystalline device comprising: a wurtzite-structure crystalline substrate with a surface orientation being within ±5 degrees of a {8 0 −8 7} plane, a {8 0 −8 −7} plane, a {4 4 −8 7} plane, or a {4 4 −8 −7} plane;an epitaxial layer within the wurtzite structure; andat least one end facet coupled to the active epitaxial layer, the end facet being a cleaved surface within ±5 degrees of a {1 1 −2 6} or a {1 1 −2 −6} crystallographic orientation. 22. The device of claim 21, wherein the wurtzite structure comprises at least one of ZnS, AgI, ZnO, CdS, CdSe, and 2H—SiC.