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Gas mixtures which comprise acids like HF, HCl or HBr and other constituents, especially gas mixtures which comprise or consist of carboxylic acid fluorides, C(O)F2 or phosphorous pentafluoride and HCl and optionally HF, can be separated by ionic liquids. The process is performed reversibly. Ionic l

Gas mixtures which comprise acids like HF, HCl or HBr and other constituents, especially gas mixtures which comprise or consist of carboxylic acid fluorides, C(O)F2 or phosphorous pentafluoride and HCl and optionally HF, can be separated by ionic liquids. The process is performed reversibly. Ionic liquids are applied the anion of which corresponds to a stronger acid than the acid to be removed. Highly purified products, for example, highly purified carbonyl fluoride can be obtained.

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1. A purified carbonyl fluoride gas, comprising C(O)F2 in an amount of at least 94.5% by weight,HCl in an amount of at most 50 ppm by weight, andfurther comprising an inert gas in an amount up to 5% by weight, wherein said inert gas includes carbon dioxide, nitrogen, or a noble gas, or further compr

1. A purified carbonyl fluoride gas, comprising C(O)F2 in an amount of at least 94.5% by weight,HCl in an amount of at most 50 ppm by weight, andfurther comprising an inert gas in an amount up to 5% by weight, wherein said inert gas includes carbon dioxide, nitrogen, or a noble gas, or further comprising organic impurities in an amount of less than 1000 ppm, wherein said organic impurities include COFCl. 2. The purified gas according to claim 1, comprising more than 0.5 ppm HCl. 3. The purified gas according to claim 1, comprising from 1 to 50 ppm HCl. 4. The purified gas according to claim 1, comprising from 1 to 15 ppm HCl. 5. The purified gas according to claim 1, comprising from 94.5 to 99.9% by weight of C(O)F2, said inert gas, and a total acidity, including HCl, in an amount between 1 to 50 ppm. 6. The purified gas according to claim 1, comprising 99.4% by weight or more of C(O)F2, between 1 and 15 ppm of total acidity including HCl, equal to or less than 0.5% by weight of said inert gas, less than 50 ppm of said organic impurities, and less than 150 ppm of other impurities. 7. The purified gas according to claim 6, wherein the inert gas includes carbon dioxide. 8. The purified gas according to claim 1, further comprising said organic impurities with a content of less than 1000 ppm. 9. The purified gas according to claim 1, further comprising said organic impurities with a content of less than 500 ppm. 10. A method for etching a semiconductor or for cleaning a Chemical Vapor Deposition chamber, comprising applying the purified carbonyl fluoride gas according to claim 1 as etching gas. 11. The method according to claim 10, wherein the purified carbonyl fluoride gas comprises from 1 to 50 ppm HCl. 12. The method according to claim 10, wherein the purified carbonyl fluoride gas comprises from 1 to 15 ppm HCl. 13. The method according to claim 10, wherein the purified carbonyl fluoride gas comprises from 94.5 to 99.9% by weight of C(O)F2, said inert gas, and a total acidity, including HCl, in an amount between 1 to 50 ppm. 14. The method according to claim 10, wherein the purified gas comprises 99.4% by weight or more of C(O)F2, comprises between 1 and 15 ppm of total acidity including HCl, comprises equal to or less than 0.5% by weight of said inert gas, comprises said organic impurities with a content of less than 50 ppm, and less than 150 ppm of other impurities. 15. The method according to claim 10, wherein the purified gas comprises said organic impurities with a content of less than 500 ppm.