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Apparatuses and methods for atomic layer deposition

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/455
  • C23F-001/00
  • H01L-021/306
  • C23C-016/06
  • C23C-016/22
출원번호 US-0232317 (2011-09-14)
등록번호 US-8293015 (2012-10-23)
발명자 / 주소
  • Lam, Hyman W. H.
  • Zheng, Bo
  • Ai, Hua
  • Jackson, Michael
  • Yuan, Xiaoxiong
  • Wang, Hougong
  • Umotoy, Salvador P.
  • Yu, Sang Ho
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Patterson & Sheridan, LLP
인용정보 피인용 횟수 : 5  인용 특허 : 55

초록

Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodim

대표청구항

1. An inlet manifold assembly for a vapor deposition process, comprising: an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly; andinjection holes extending from the annular channel, through a sidewall of the centralized c

이 특허에 인용된 특허 (55)

  1. Bhatnagar Yashraj K., Apparatus and method for efficient and compact remote microwave plasma generation.
  2. Jallepally, Ravi; Li, Shih-Hung; Duboust, Alain; Zhao, Jun; Chen, Liang-Yuh; Carl, Daniel A., Apparatus and method for fast-cycle atomic layer deposition.
  3. Chen,Ling; Ku,Vincent W.; Chang,Mei; Wu,Dien Yeh; Chung,Hua, Apparatus and method for hybrid chemical processing.
  4. Chen,Ling; Ku,Vincent W.; Chang,Mei; Wu,Dien Yeh; Chung,Hua, Apparatus and method for hybrid chemical processing.
  5. Chen,Chen An; Gelatos,Avgerinos; Yang,Michael X.; Xi,Ming; Hytros,Mark M., Apparatus and method for plasma assisted deposition.
  6. Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
  7. Yoder Max N. (Falls Church VA), Apparatus for and a method of growing thin films of elemental semiconductors.
  8. Okamura Ryuji,JPX, Apparatus for forming a deposited film by plasma chemical vapor deposition.
  9. Chen, Ling; Ku, Vincent W.; Chang, Mei; Wu, Dien Yeh; Chung, Hua, Apparatus for hybrid chemical processing.
  10. Suda Toshikazu (Yokohama JPX), Apparatus for semiconductor process including photo-excitation process.
  11. Habuka Hitoshi (Gunma-ken JPX), Apparatus for vapor-phase epitaxial growth.
  12. Yoder Max N. (Falls Church VA), Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors.
  13. Rocha Alvarez, Juan Carlos; Balasubramanian, Ganesh; Cho, Tom K.; Padhi, Deenesh; Nowak, Thomas; Kim, Bok Hoen; M'Saad, Hichem; Raj, Daemian, Blocker plate bypass to distribute gases in a chemical vapor deposition system.
  14. Mieno Fumitake (Kawasaki JPX), Chemical vapor deposition apparatus having an ejecting head for ejecting a laminated reaction gas flow.
  15. Lei, Lawrence C.; Mak, Alfred W.; Tzu, Gwo-Chuan; Tepman, Avi; Xi, Ming; Glenn, Walter Benjamin, Clamshell and small volume chamber with fixed substrate support.
  16. Nguyen, Son T.; Sangam, Kedarnath; Schwartz, Miriam; Choi, Kenric; Bhat, Sanjay; Narwankar, Pravin K.; Kher, Shreyas; Sharangapani, Rahul; Muthukrishnan, Shankar; Deaton, Paul, Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system.
  17. Chen, Ling; Ganguli, Seshadri; Marcadal, Christophe; Cao, Wei; Mosely, Roderick C.; Chang, Mei, Copper interconnect barrier layer structure and formation method.
  18. Yang, Michael X.; Xi, Ming, Cyclical deposition of a variable content titanium silicon nitride layer.
  19. Khandelwal, Amit; Gelatos, Avgerinos V.; Marcadal, Christophe; Chang, Mei, Deposition and densification process for titanium nitride barrier layers.
  20. Balish Kenneth E. ; Nowak Thomas ; Tanaka Tsutomu ; Beals Mark, Dilute remote plasma clean.
  21. Luman, Homer C., Direct injection contact apparatus for severe services.
  22. Laxman Murugesh ; Padmanaban Krishnaraj ; Michael Cox ; Canfeng Lai ; Narendra Dubey ; Tom K. Cho ; Sudhir Ram Gondhalekar ; Lily L. Pang, Directing a flow of gas in a substrate processing chamber.
  23. Henri, Jon; Meinhold, Henner; Gage, Christopher; Doble, Dan, Edge removal of films using externally generated plasma species.
  24. Desu Seshu Babu ; Ramanathan Sasangan ; Suchicital Carlos Tres Avala, Flash evaporator.
  25. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus and method for atomic layer deposition.
  26. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus for atomic layer deposition.
  27. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman; Chang, Mei, Gas delivery apparatus for atomic layer deposition.
  28. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman; Chang, Mei, Gas delivery apparatus for atomic layer deposition.
  29. Rajinder Dhindsa ; Fangli Hao ; Eric Lenz, Gas distribution apparatus for semiconductor processing.
  30. Quirk George ; Raney Daniel V. ; Heuser Michael Scott ; Shepard ; Jr. C. B., Gas injection disc assembly for CVD applications.
  31. Frankel, Jonathan; Ponnekanti, Hari; Shmurun, Inna; Sivaramakrishnan, Visweswaren, Heater/lift assembly for high temperature processing chamber.
  32. Yang, Michael X.; Itoh, Toshio; Xi, Ming, Integration of titanium and titanium nitride layers.
  33. Yang,Michael X.; Itoh,Toshio; Xi,Ming, Integration of titanium and titanium nitride layers.
  34. Gadgil Prasad N. (Burnaby CAX), Inverted diffuser stagnation point flow reactor for vapor deposition of thin films.
  35. Tzu, Gwo-Chuan; Umotoy, Salvador P., Lid assembly for a processing system to facilitate sequential deposition techniques.
  36. Curatolo,Susana, Melting and vaporizing apparatus and method.
  37. Shepherd, Jr.,Robert A.; Caughran,James, Method and apparatus for plasma optimization in water processing.
  38. Babic, Darko, Method and system for controlling a velocity field of a supercritical fluid in a processing system.
  39. Chung, Hua; Chen, Ling; Ku, Vincent W., Method of film deposition using activated precursor gases.
  40. Archbold Edwin P.,AUX ; Vaughan Stephen P.,AUX, Oxygen dissolver for pipelines or pipe outlets.
  41. Raney Daniel V. ; Heuser Michael Scott ; Jaffe Stephen M. ; Shepard ; Jr. C. B., Plasma jet system.
  42. Yang,Michael X.; Itoh,Toshio; Xi,Ming, Plasma-enhanced cyclic layer deposition process for barrier layers.
  43. Okamura Ryuji (Ika JPX) Otoshi Hirokazu (Nagahama JPX) Takei Tetsuya (Nagahama JPX), Process and apparatus for the formation of a functional deposited film on a cylindrical substrate by means of microwave.
  44. Manabe Katsuhide (Ichinomiya JPX) Okazaki Nobuo (Konan JPX) Akazaki Isamu (Machida JPX) Hiramatsu Kazumasa (Yokkaichi JPX) Amano Hiroshi (Hamamatsu JPX), Process of vapor growth of gallium nitride and its apparatus.
  45. Moslehi Mehrdad M. (Dallas TX) Davis Cecil J. (Greenville TX) Matthews Robert T. (Plano TX), Programmable multizone gas injector for single-wafer semiconductor processing equipment.
  46. Fong Gary ; Silvestre Irwin ; Truong Quoc, Resonant chamber applicator for remote plasma source.
  47. Vo, Be Van; Umotoy, Salvador P.; Trinh, Son N.; Lei, Lawrence Chung-Lai; Edelstein, Sergio; Tepman, Avi; Kao, Chien-Teh; Tsai, Kenneth, Resonant chamber applicator for remote plasma source.
  48. Glenn, W. Benjamin; Verplancken, Donald J., Simultaneous cyclical deposition in different processing regions.
  49. Fong Gary ; Silvestre Irwin, Substrate processing apparatus with bottom-mounted remote plasma system.
  50. Sivaramakrishnan Visweswaren ; Fong Gary, Systems and methods for detecting end of chamber clean in a thermal (non-plasma) process.
  51. Tue Nguyen, Three-dimensional showerhead apparatus.
  52. Chung,Hua, Titanium tantalum nitride silicide layer.
  53. Somekh Sasson ; Zhao Jun ; Dornfest Charles ; Sajoto Talex ; Selyutin Leonid ; Ku Vincent ; Wang Chris ; Chang Frank ; Tang Po, Vaporization and deposition apparatus.
  54. Robert W. Grant ; Benjamin J. Petrone ; Matthew D. Brubaker ; Paul D. Mumbauer, Vortex based CVD reactor.
  55. Wu, Dien-Yeh; Bajaj, Puneet; Yuan, Xiaoxiong; Kim, Steven H.; Chu, Schubert S.; Ma, Paul F.; Aubuchon, Joseph F., Vortex chamber lids for atomic layer deposition.

이 특허를 인용한 특허 (5)

  1. Lam, Hyman W. H.; Zheng, Bo; Ai, Hua; Jackson, Michael; Yuan, Xiaoxiong; Wang, Hougong; Umotoy, Salvador P.; Yu, Sang Ho, Apparatuses and methods for atomic layer deposition.
  2. Mudd, Daniel T.; Mudd, Patti J., Flow control system, method, and apparatus.
  3. Mudd, Daniel T.; Mudd, Patti J, Gas delivery system for outputting fast square waves of process gas during semiconductor processing.
  4. Murray, Conal E.; Yang, Chih-Chao, Method for forming improved liner layer and semiconductor device including the same.
  5. Mudd, Daniel T.; Mudd, Patti J, Pressure based mass flow controller.
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