Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-027/15
H01L-033/00
출원번호
US-0754886
(2010-04-06)
등록번호
US-8299473
(2012-10-30)
발명자
/ 주소
D'Evelyn, Mark P.
Sharma, Rajat
Hall, Eric M.
Feezell, Daniel F.
출원인 / 주소
Soraa, Inc.
대리인 / 주소
Kilpatrick Townsend & Stockton LLP
인용정보
피인용 횟수 :
42인용 특허 :
57
초록▼
A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a qua
A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.
대표청구항▼
1. A packaged light emitting device comprising: a substrate member having a surface region;at least one light emitting diode overlying the surface region, the diode being fabricated on a substrate of semipolar or nonpolar GaN, and the diode emitting electromagnetic radiation of a first wavelength;an
1. A packaged light emitting device comprising: a substrate member having a surface region;at least one light emitting diode overlying the surface region, the diode being fabricated on a substrate of semipolar or nonpolar GaN, and the diode emitting electromagnetic radiation of a first wavelength;an optical coupling layer coupled to the light emitting diode;an optical path provided between the light emitting diode and the optical coupling layer; anda transparent phosphor having a thickness overlying the optical coupling layer and being excited by emission from the light emitting diode to emit electromagnetic radiation of a second wavelength,wherein the optical coupling layer is free of materials that scatter light; andwherein the light emitting diode includes a quantum well region characterized by an electron wave function and a hole wave function which are overlapped within a predetermined spatial region of the quantum well region. 2. The device of claim 1 wherein the optical path comprises an optical coupling material. 3. The device of claim 2, wherein the polarized emissions of the first wavelength is characterized by a polarization ratio of between 0.7 and 0.9. 4. The device of claim 1 wherein the at least one light emitting diode emits polarized emissions of the first wavelength. 5. The device of claim 1 wherein the transparent phosphor emits polarized electromagnetic radiation of the second wavelength. 6. The device of claim 5 wherein at least one surface of the phosphor flat and is parallel to the surface of the light emitting diode. 7. The device of claim 5 wherein at least one surface of the transparent phosphor flat and is at an oblique angle with respect to the surface of the at least one light emitting diode. 8. The device of claim 5 wherein the transparent phosphor has a sawtooth pattern surface. 9. The device of claim 5 wherein the transparent phosphor includes a plurality of microlenses. 10. The device of claim 9 wherein the thickness of the transparent phosphor overlies a first side of the optically transparent member, the first side facing the light emitting diode. 11. The device of claim 5 wherein the transparent phosphor includes a dome-shaped structure. 12. The device of claim 5 wherein at least one surface of the transparent phosphor is characterized by a shape configured for light extraction including both primary and secondary polarization. 13. The device of claim 1 wherein the phosphor is placed in close proximity to the light emitting diode. 14. The device of claim 1 wherein the transparent phosphor overlies a second side of the optical coupling layer, the second side facing away from the light emitting diode. 15. The device of claim 1 wherein the polarized first emission comprises blue light. 16. The device of claim 15 wherein the phosphor comprises at least one of (Y, Gd, Tb, Sc, Lu, La)3(Al, Ga, In)5O12:Ce3+, SrGa2S4:Eu2+, and SrS:Eu2+. 17. The device of claim 16 wherein the phosphor comprises a blend of phosphors capable of emitting blue light, green light, and red light. 18. The device of claim 15 further comprising a phosphor capable of emitting red light selected from at least one of the group consisting of (Gd,Y,Lu,La)2O3:Eu3+, Bi3+; (Gd,Y,Lu,La)2O2S:Eu3+, Bi3+; (Gd,Y,Lu,La)VO4:Eu3+, Bi3+; Y2(O,S)3: Eu3+; Ca1-xMo1-ySiyO4:, where 0.05≦x≦0.5, 0≦y≦0.1; (Li,Na,K)5Eu(W,Mo)O4; (Ca,Sr)S:Eu2+; SrY2S4:Eu2+; CaLa2S4:Ce3+; (Ca,Sr)S:Eu2+; 3.5MgO*0.5MgF2*GeO2:Mn4+ (MFG); (Ba,Sr,Ca)MgxP2O7:Eu2+, Mn2+; (Y,Lu)2WO6:Eu3+, Mo6+; (Ba,Sr,Ca)3MgxSi2O8:Eu2+, Mn2+, wherein 1
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