초록 ▼

One or more sense amplifiers for sensing the conduction current of non-volatile memory is controlled by signals that are timed by a reference sense amplifier having similar characteristics and operating conditions. In one aspect, a sensing period is determined by when the reference sense amplifier s

One or more sense amplifiers for sensing the conduction current of non-volatile memory is controlled by signals that are timed by a reference sense amplifier having similar characteristics and operating conditions. In one aspect, a sensing period is determined by when the reference sense amplifier sensing a reference current detects an expected state. In another aspect, an integration period for an amplified output is determined by when the reference sense amplifier outputs an expected state. When these determined timings are used to control the one or more sense amplifiers, environment and systemic variations are tracked.

대표청구항 ▼

1. In a non-volatile memory device having a plurality of memory cells to be sensed in parallel, each memory cell having a source electrode, and the plurality of memory cells having their source electrodes coupled together into a combined source line, a method of sensing comprising: (a) providing a p

1. In a non-volatile memory device having a plurality of memory cells to be sensed in parallel, each memory cell having a source electrode, and the plurality of memory cells having their source electrodes coupled together into a combined source line, a method of sensing comprising: (a) providing a predetermined demarcation current value to discriminate between two memory states;(b) sensing the plurality of memory cells in parallel;(c) identifying a high-current set of memory cells having conduction currents higher than said predetermined demarcation current value;(d) marking the high current set of memory cells;(e) inhibiting the conduction currents of the memory cells which have been marked;(f) repeating (b) to (e) for a predetermined number of times; and(g) sensing the plurality of memory cells in parallel in a final pass. 2. The method of claim 1, wherein said predetermined number of times is zero. 3. The method of claim 1, wherein said predetermined number of times is one or greater. 4. The method of claim 1, wherein: the conduction currents of said plurality of memory cells are sensed though a plurality of associated bit lines; andsaid step (c) of identifying the high-current set of memory cells includes: precharging said plurality of associated bit lines with a constant current source having a predetermined current limitation;identifying those memory cells having conduction currents higher than said predetermined demarcation current value by their associated bit lines' precharging rates. 5. The method of claim 1, wherein: said step (f) of sensing is performed by an associated plurality of sense amplifier in parallel; andsaid step (c) of identifying the high-current set of memory cells includes: identifying those memory cells by using their associated sense amplifiers to compare their conduction currents relative to said predetermined demarcation current value. 6. The method of claim 1, wherein: the conduction currents of said plurality of memory cells are sensed though a plurality of associated bit lines; andsaid inhibiting the conduction currents includes pulling the associated bit lines of those memory cells to ground. 7. The method of claim 1, wherein: said plurality of memory cells is non-volatile memory. 8. The method of claim 1, wherein: said plurality of memory cells is flash EEPROM. 9. The method of claim 1, wherein: said plurality of memory cells is of the NAND type. 10. The method of claim 1, wherein: said plurality of memory cells each has a floating gate. 11. The method of claim 1, wherein: said plurality of memory cells is each as a dielectric layer for storing charge. 12. The method of claim 1, wherein: said plurality of memory cells is embodied as a removable memory card. 13. The method as in claim 1, wherein: each memory cell stores one bit of data. 14. The method as in claim 1, wherein: each memory cells stores more than one bit of data.