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특허 상세정보

Electroless deposition process on a silicon contact

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) C23C-018/30    C23C-018/36   
미국특허분류(USC) 106/001.11; 106/001.22; 106/001.27
출원번호 US-0689176 (2010-01-18)
등록번호 US-8308858 (2012-11-13)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Patterson & Sheridan, LLP
인용정보 피인용 횟수 : 8  인용 특허 : 116
초록

Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may co...

대표
청구항

1. A composition of an activation solution, comprising: a cobalt source at a concentration within a range from about 1 mM to about 100 mM;a fluoride source at a concentration within a range from about 10 mM to about 400 mM; anda hypophosphite source at a concentration within a range from about 5 mM to about 150 mM. 2. The composition of claim 1, further comprising: a cobalt source at a concentration within a range from about 5 mM to about 50 mM;a fluoride source at a concentration within a range from about 20 mM to about 200 mM; anda hypophosphite source...

이 특허에 인용된 특허 (116)

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