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Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/46
출원번호 US-0577175 (2004-10-28)
등록번호 US-8309431 (2012-11-13)
우선권정보 FR-03 12621 (2003-10-28)
국제출원번호 PCT/FR2004/002779 (2004-10-28)
§371/§102 date 20070403 (20070403)
국제공개번호 WO2005/043615 (2005-05-12)
발명자 / 주소
  • Nguyen, Nguyet-Phuong
  • Cayrefourcq, Ian
  • Lagahe-Blanchard, Christelle
  • Bourdelle, Konstantin
  • Tauzin, Aurélie
  • Fournel, Franck
출원인 / 주소
  • Commissariat a l'Energie Atomique
대리인 / 주소
    Brinks Hofer Gilson & Lione
인용정보 피인용 횟수 : 8  인용 특허 : 210

초록

A method for self-supported transfer of a fine layer, in which at least one species of ions is implanted in a source-substrate at a specified depth in relation to the surface of the source-substrate. A stiffener is applied in intimate contact with the source-substrate and the source-substrate underg

대표청구항

1. A method of self-supported transfer of a thin film, the method comprising: preparing a source substrate;implanting at least a first species of ions or gas at a first dose in the source substrate at a specified depth with respect to a face of the source substrate, wherein the first species generat

이 특허에 인용된 특허 (210)

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