[특허]Thermal conductivity detector

Agilent Technologies, Inc.

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Thermal conductivity detector

특허상세정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	G01N-025/00
미국특허분류(USC)	374/044; 374/043; 374/010
출원번호	US-0613670 (2009-11-06)
등록번호	US-8313236 (2012-11-20)
발명자 / 주소	Barth, Phillip W.
출원인 / 주소	Agilent Technologies, Inc.
인용정보	피인용 횟수 : 1 인용 특허 : 11

초록
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A thermal conductivity detector includes a structure defining a cavity, the structure principally comprising a material having a first coefficient of thermal expansion; a sensing element for sensing a thermal conductivity of a gas flowing within the cavity, the sensing element having a second coefficient of thermal expansion different from the third first coefficient of thermal expansion, the sensing element being disposed at least in part within the cavity; and a compensation structure having a third coefficient of thermal expansion different from the first and second thermal coefficients of expansion. Over a selected temperature range, a stress within the sensing element is less than a yield stress of any component of the sensing element, and a stress within the compensation structure is less than a yield stress of any component of the compensation structure.

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1. A thermal conductivity detector, comprising: a structure defining a cavity, the structure principally comprising a material having a first coefficient of thermal expansion;a sensing element for sensing a thermal conductivity of a gas flowing within the cavity, the sensing element having a second coefficient of thermal expansion different from the first coefficient of thermal expansion, the sensing element being disposed at least in part within the cavity;a first insulating material substantially covering the sensing element, the first insulating material having a third coefficient of thermal expansion different from the first and second thermal coefficients of expansion; anda second insulating material substantially covering the first insulating material, the second insulating material having a fourth coefficient of thermal expansion different from the first and second thermal coefficients of expansion,wherein one of the first and second insulating materials has an intrinsic compressive stress, and the other of the first and second insulating materials has an intrinsic tensile stress. 2. The thermal conductivity detector of claim 1, wherein the structure comprises a first semiconductor substrate, and a second semiconductor substrate disposed on the first semiconductor substrate. 3. The thermal conductivity detector of claim 2, wherein the first and second insulating materials are provided on a top surface of the first semiconductor substrate, and wherein a bottom surface of the second semiconductor substrate is disposed on the first and second insulating materials. 4. The thermal conductivity detector of claim 1, wherein the sensing element is a metal filament. 5. The thermal conductivity detector of claim 1, wherein the metal filament is one of nickel, tungsten and platinum. 6. The thermal conductivity detector of claim 1, wherein the first insulating layer comprises a hydrogenated silicon nitride. 7. The thermal conductivity detector of claim 6, wherein the second insulating layer comprises a hydrogenated silicon nitride. 8. The thermal conductivity detector of claim 1, wherein the third and fourth thermal coefficients of expansion are substantially the same. 9. The thermal conductivity detector of claim 1, further comprising a third insulating material substantially disposed beneath the sensing element, on an opposite side of the sensing element as the first insulating material, the third insulating material having a coefficient of thermal expansion different from the first and second thermal coefficients of expansion. 10. A thermal conductivity detector, comprising: a principle structure defining a cavity, the principle structure principally comprising a material having a first coefficient of thermal expansion;a sensing element for sensing a thermal conductivity of a gas flowing within the cavity, the sensing element having a second coefficient of thermal expansion different from the first coefficient of thermal expansion, the sensing element being disposed at least in part within the cavity;an insulating structure substantially encasing the sensing element, the insulating structure having a third coefficient of thermal expansion different from the first and second thermal coefficients of expansion, a first end of the insulating structure being attached at a first end of the cavity to a first side to the principle structure defining the cavity; anda compensator disposed at least in part within the cavity, the compensator having a fourth coefficient of thermal expansion different from the first and second thermal coefficients of expansion, wherein the compensator includes: a first end that is attached to the insulating structure at a second end of the insulating structure opposite the first end thereof, anda second end that is attached at a second end of the cavity opposite the first end thereof to a second side of the principle structure opposite the first side thereof. 11. The thermal conductivity detector of claim 10, wherein the principle structure comprises a first semiconductor substrate, and a second semiconductor substrate disposed on the first semiconductor substrate. 12. The thermal conductivity detector of claim 11, wherein the insulating structure is provided on a top surface of the first semiconductor substrate, and wherein a bottom surface of the second semiconductor substrate is disposed on the insulating material at the first side of the principle structure, and wherein the compensator is provided on a top surface of the first semiconductor substrate, and wherein a bottom surface of the second semiconductor substrate is disposed on the compensator at the second side of the principle structure. 13. The thermal conductivity detector of claim 10, wherein the sensing element is a metal filament. 14. The thermal conductivity detector of claim 13, wherein the metal filament is one of nickel, tungsten and platinum. 15. The thermal conductivity detector of claim 10, wherein one of the insulating structure and the compensator has an intrinsic compressive stress, and the other of the insulating structure and the compensator has an intrinsic tensile stress. 16. The thermal conductivity detector of claim 10, wherein the third and fourth thermal coefficients of expansion are substantially the same. 17. A thermal conductivity detector, comprising: a structure defining a cavity, the structure principally comprising a material having a first coefficient of thermal expansion;a sensing element for sensing a thermal conductivity of a gas flowing within the cavity, the sensing element having a second coefficient of thermal expansion different from the third coefficient of thermal expansion, the sensing element being disposed at least in part within the cavity; anda compensation structure adapted to compensate for a difference between the first and second thermal coefficients of expansion,wherein over a selected temperature range, a stress within the sensing element is less than a yield stress of any component of the sensing element, and a stress within the compensation structure is less than a yield stress of any component of the compensation structure, andwherein the selected temperature range is at least between 0° C. and 400° C. 18. The thermal conductivity detector of claim 17, wherein the sensing element is a metal filament. 19. The thermal conductivity detector of claim 17, wherein the compensation structure comprises: a first insulating material substantially covering the sensing element, the first insulating material having a third coefficient of thermal expansion different from the first and second thermal coefficients of expansion; anda second insulating material substantially covering the first insulating material, the second insulating material having a fourth coefficient of thermal expansion different from the first and second thermal coefficients of expansion. 20. The thermal conductivity detector of claim 17, further comprising an insulating structure substantially encasing the sensing element, the insulating structure having a third coefficient of thermal expansion different from the first and second thermal coefficients of expansion, a first end of the insulating structure being attached at a first end of the cavity to a first side to the principle structure defining the cavity, wherein the compensation structure is disposed at least in part within the cavity, the compensation structure having a fourth coefficient of thermal expansion different from the first and second thermal coefficients of expansion, andwherein the compensation structure includes: a first end that is attached to the insulating structure at a second end of the insulating structure opposite the first end thereof, anda second end that is attached at a second end of the cavity opposite the first end thereof to a second side of the principle structure opposite the first side thereof.

이 특허에 인용된 특허 (11)

이 특허를 인용한 특허 (1)

Samejima, Takeru; Hamamatsu, Nobuyuki; Yoshida, Takashi, Sensor, strain sensor, and pressure sensor.

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특허 상세정보

Thermal conductivity detector

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이 특허에 인용된 특허 (11)

이 특허를 인용한 특허 (1)

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Thermal conductivity detector

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이 특허에 인용된 특허 (11)

이 특허를 인용한 특허 (1)

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IPC 상세정보(version : 201201)

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