[특허]Method and apparatus for controllable sodium delivery for thin film photovoltaic materials

Method and apparatus for controllable sodium delivery for thin film photovoltaic materials 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/00
출원번호	US-0228872 (2011-09-09)
등록번호	US-8313976 (2012-11-20)
발명자 / 주소	Mackie, Neil M. Corson, John
출원인 / 주소	Mackie, Neil M.
인용정보	피인용 횟수 : 0 인용 특허 : 67

초록 ▼

A solar cell includes a substrate, a first electrode located over the substrate, where the first electrode comprises a first transition metal layer, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. The first transition metal layer contains (i) an alkali element or an alkali compound and (ii) a lattice distortion element or a lattice distortion compound. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material.

대표청구항 ▼

1. A method of manufacturing a solar cell, comprising: providing a substrate;depositing a first electrode over the substrate wherein the first electrode comprises a first transition metal layer comprising: (i) an alkali element or an alkali compound, and (ii) a lattice distortion element or a lattice distortion compound;depositing at least one p-type semiconductor absorber layer over the first electrode, wherein the p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material;depositing an n-type semiconductor layer over the p-type semiconductor absorber layer; anddepositing a second electrode over the n-type semiconductor layer;wherein:the first transition metal layer comprises molybdenum;the alkali element or alkali compound comprises sodium;the lattice distortion compound or lattice distortion element is selected from the group consisting of oxygen, MoO2 and MoO3;the p-type semiconductor absorber layer comprises 0.005 to 1.5 atomic percent sodium diffused from the first transition metal layer;the first transition metal layer comprises at least 59 atomic percent molybdenum, 5 to 40 atomic percent oxygen and 0.01 to 1.5 atomic percent sodium;the second transition metal layer comprises an oxygen containing molybdenum layer that has a higher porosity than the alkali diffusion barrier layer;sodium diffuses from the first transition metal layer into the p-type semiconductor absorber layer through the second transition metal layer during the step of depositing the p-type semiconductor absorber layer; andthe alkali diffusion barrier layer comprises a substantially oxygen free molybdenum layer which substantially prevents sodium diffusion from the first transition metal layer into the substrate through the alkali diffusion barrier layer. 2. The method of claim 1, wherein the steps of depositing the alkali diffusion barrier layer, depositing the first transition metal layer and depositing the second transition metal layer comprise sputtering the alkali diffusion barrier layer, sputtering the first transition metal layer and sputtering the second transition metal layer in the same sputtering apparatus. 3. The method of claim 2, wherein the step of sputtering the first transition metal layer comprises sputtering the first transition metal layer from a target comprising sodium molybdate. 4. The method of claim 2, wherein the step of sputtering the first transition metal layer comprises sputtering the first transition metal layer from at least one pair of sputtering targets having a different composition from each other. 5. The method of claim 2, wherein: the step of sputtering the alkali diffusion barrier layer occurs under a first sputtering environment in a first vacuum chamber of a magnetron sputtering system;the step of sputtering the second transition metal layer occurs under a second sputtering environment in a second vacuum chamber of the magnetron sputtering system different from the first vacuum chamber; andthe second sputtering environment differs from the first sputtering environment in at least one of argon pressure, oxygen pressure, or nitrogen pressure. 6. The method of claim 2, wherein: the step of sputtering the alkali diffusion barrier layer occurs at a lower pressure than the step of sputtering the second transition metal layer such that the alkali diffusion barrier layer is in compressive stress;the step of sputtering the alkali diffusion barrier layer occurs in an oxygen free atmosphere; andthe step of sputtering the second transition metal layer occurs in an oxygen containing atmosphere.

이 특허에 인용된 특허 (67)

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A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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연합인증

Method and apparatus for controllable sodium delivery for thin film photovoltaic materials 원문보기

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Method and apparatus for controllable sodium delivery for thin film photovoltaic materials 원문보기

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