IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0027215
(2011-02-14)
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등록번호 |
US-8318269
(2012-11-27)
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발명자
/ 주소 |
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출원인 / 주소 |
- McAlister Technologies, LLC
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
19 인용 특허 :
65 |
초록
▼
Induction for thermochemical processes, and associated systems and methods are disclosed. A method in accordance with a particular embodiment includes placing first and second substrates in a reactor, with each substrate having a surface facing toward the other. Method can further include directing
Induction for thermochemical processes, and associated systems and methods are disclosed. A method in accordance with a particular embodiment includes placing first and second substrates in a reactor, with each substrate having a surface facing toward the other. Method can further include directing a precursor gas into the reactor and activating an induction coil proximate to the facing surfaces of the substrates to dissociate the precursor gas. A constituent of the precursor gas is deposited on both the first and second surfaces, and heat radiated from each surface and/or a constituent deposited on the surface is received at the other surface and/or the constituent deposited on the other surface.
대표청구항
▼
1. A method for forming a material, comprising: placing a first substrate in a reactor, the first substrate having an exposed first surface;placing a second substrate in the reactor, the second substrate having an exposed second surface facing toward the first surface;insulating otherwise exposed su
1. A method for forming a material, comprising: placing a first substrate in a reactor, the first substrate having an exposed first surface;placing a second substrate in the reactor, the second substrate having an exposed second surface facing toward the first surface;insulating otherwise exposed surfaces of the first substrate, other than the first surface, to at least restrict radiation from the first substrate except at the first surface;insulating otherwise exposed surfaces of the second substrate, other than the second surface, to at least restrict radiation from the second substrate except at the second surface;directing a precursor gas into the reactor;activating an induction coil proximate to the first and second surfaces to dissociate the precursor gas;depositing a constituent of the precursor gas on both the first and second surfaces;receiving heat radiated from (a) at least one of the first surface and the constituent deposited on the first surface at (b) at least one of the second surface and the constituent deposited on the second surface; andreceiving heat radiated from (a) at least one of the second surface and the constituent deposited on the second surface at (b) at least one of the first surface and the constituent deposited on the first surface. 2. The method of claim 1 wherein directing a precursor gas includes directing methane. 3. The method of claim 1 wherein depositing a constituent includes depositing carbon. 4. The method of claim 1 wherein the precursor gas includes a hydrogen compound, and wherein the method further comprises dissociating hydrogen from the compound, and wherein depositing a constituent includes depositing a constituent of the compound remaining after dissociating the hydrogen. 5. The method of claim 4, further comprising removing the hydrogen from the reactor and providing the hydrogen as a fuel. 6. The method of claim 5, further comprising separating the hydrogen into a first portion having a first level of purity and a second portion having a second level of purity less than the first, and wherein the method further comprises: producing electrical energy with the first portion at a fuel cell; andcombusting the second portion at an engine. 7. The method of claim 1, further comprising withdrawing the first and second substrates from the reactor in a continuous manner while the constituent is deposited on the first and substrates. 8. The method of claim 7 wherein withdrawing includes withdrawing the first and second substrates in opposite directions. 9. The method of claim 8 wherein withdrawing includes withdrawing the first substrate through a first seal of the reactor and withdrawing the second substrate through a second seal of the reactor to at least restrict gases from escaping the reactor. 10. The method of claim 1, further comprising: halting the process of depositing the constituent; andremoving the first and second substrates from the reactor while the process of depositing the constituent is halted. 11. A method for forming a material, comprising: placing a first graphite substrate in an induction zone of a reactor, the first graphite substrate having a first exposed surface;placing a second graphite substrate in the induction zone of the reactor, the second graphite substrate having a second surface facing toward the first surface;directing methane into the induction zone;activating an induction coil around the induction zone to dissociate the methane into carbon and hydrogen;epitaxially growing carbon on the first and second surfaces;recycling heat within the induction zone by: receiving heat radiated from (a) at least one of the first surface and the carbon grown on the first surface at (b) at least one of the second surface and the carbon grown on the second surface;receiving heat radiated from (a) at least one of the second surface and the carbon grown on the second surface at (b) at least one of the first surface and the carbon grown on the first surface;at least restricting radiation from any surface of the first graphite substrate other than the first surface; andat least restricting radiation from any surface of the second graphite substrate other than the second surface. 12. The method of claim 11, further comprising withdrawing the first and second substrates and epitaxially grown carbon from the reactor in opposite directions through corresponding first and second seals to at least restrict gases from escaping the reactor. 13. The method of claim 11, further comprising: receiving first heat from at least one of the first substrate and carbon grown on the first substrate;receiving second heat from at least one of the second substrate and carbon grown on the second substrate;removing dissociated hydrogen from the induction zone;receiving third heat from the hydrogen removed from the induction zone;transferring at least a portion of the first, second and third heats to a volume of methane; anddirecting the volume of methane into the induction zone for dissociation. 14. A method for forming a material, comprising: placing a first substrate in a reactor, the first substrate having an exposed first surface;placing a second substrate in the reactor, the second substrate having an exposed second surface facing toward the first surface;directing a precursor gas into the reactor;activating an induction coil proximate to the first and second surfaces to dissociate the precursor gas;depositing a constituent of the precursor gas on both the first and second surfaces;receiving heat radiated from (a) at least one of the first surface and the constituent deposited on the first surface at (b) at least one of the second surface and the constituent deposited on the second surface;receiving heat radiated from (a) at least one of the second surface and the constituent deposited on the second surface at (b) at least one of the first surface and the constituent deposited on the first surface; andwithdrawing the first and second substrates from the reactor in a continuous manner while the constituent is deposited on the first and substrates. 15. The method of claim 14, further comprising: insulating otherwise exposed surfaces of the first substrate, other than the first surface, to at least restrict radiation from the first substrate except at the first surface; andinsulating otherwise exposed surfaces of the second substrate, other than the second surface, to at least restrict radiation from the second substrate except at the second surface. 16. The method of claim 14 wherein directing a precursor gas includes directing methane. 17. The method of claim 14 wherein the precursor gas includes a hydrogen compound, and wherein the method further comprises dissociating hydrogen from the compound, and wherein depositing a constituent includes depositing a constituent of the compound remaining after dissociating the hydrogen. 18. The method of claim 17, further comprising removing the hydrogen from the reactor and providing the hydrogen as a fuel. 19. The method of claim 18, further comprising separating the hydrogen into a first portion having a first level of purity and a second portion having a second level of purity less than the first, and wherein the method further comprises: producing electrical energy with the first portion at a fuel cell; andcombusting the second portion at an engine. 20. The method of claim 14 wherein withdrawing includes withdrawing the first and second substrates in opposite directions.
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