Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/46
H01L-021/36
출원번호
US-0859547
(2010-08-19)
등록번호
US-8318588
(2012-11-27)
우선권정보
JP-2009-194318 (2009-08-25)
발명자
/ 주소
Imahayashi, Ryota
Ohnuma, Hideto
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson, Eric J.
인용정보
피인용 횟수 :
1인용 특허 :
62
초록▼
It is an object of the invention is to provide a method suitable for reprocessing a semiconductor substrate having favorable planarity. Another object of the invention is to manufacture a reprocessed semiconductor substrate by using the method suitable for reprocessing a semiconductor substrate havi
It is an object of the invention is to provide a method suitable for reprocessing a semiconductor substrate having favorable planarity. Another object of the invention is to manufacture a reprocessed semiconductor substrate by using the method suitable for reprocessing a semiconductor substrate having favorable planarity, and to manufacture an SOI substrate by using the reprocessed semiconductor substrate. A projecting portion of a semiconductor substrate is removed using a method capable of selectively removing a semiconductor region which is damaged by ion irradiation or the like. Further, an oxide film is formed on a surface of the semiconductor substrate when the semiconductor substrate is planarized by a polishing treatment typified by a CMP method, whereby the semiconductor substrate is evenly polished at a uniform rate. Moreover, a reprocessed semiconductor substrate is manufactured using the aforementioned method, and an SOI substrate is manufactured using the reprocessed semiconductor substrate.
대표청구항▼
1. A method for reprocessing a semiconductor substrate comprising the steps of: performing a first etching treatment on a semiconductor substrate comprising a first damaged semiconductor region and a projecting portion, the projection portion including a second damaged semiconductor region and an in
1. A method for reprocessing a semiconductor substrate comprising the steps of: performing a first etching treatment on a semiconductor substrate comprising a first damaged semiconductor region and a projecting portion, the projection portion including a second damaged semiconductor region and an insulating layer over the second damaged semiconductor region, whereby the insulating layer is removed;performing a second etching treatment on the semiconductor substrate, after performing the first etching treatment, by using a solution containing a first substance capable of oxidizing a semiconductor material included in the semiconductor substrate, a second substance capable of dissolving an oxidized semiconductor material, and a third substance capable of controlling a speed of oxidation of the semiconductor material and a speed of dissolution of the oxidized semiconductor material, whereby the first and the second damaged semiconductor regions are removed selectively with respect to a non-damaged semiconductor region;performing a third etching treatment after the second etching treatment, whereby oxidized portions of the semiconductor material at the surface of the semiconductor substrate are removed;forming an oxide film on a surface of the semiconductor substrate after performing the third etching treatment; andperforming a polishing treatment on a surface of the oxide film, whereby the surface of the semiconductor substrate is exposed and planarized. 2. The method for reprocessing a semiconductor substrate according to claim 1, wherein the projection portion corresponds to a peripheral region of the semiconductor substrate. 3. The method for reprocessing a semiconductor substrate according to claim 1, wherein the third etching treatment and the formation of the oxide film are repeatedly performed. 4. The method for reprocessing a semiconductor substrate according to claim 1, further comprising the step of repeatedly forming a second oxide film and removing the second oxide film at the surface of the semiconductor substrate after the second etching treatment. 5. The method for reprocessing a semiconductor substrate according to claim 1, wherein the oxide film is formed using an aqueous solution containing ozone. 6. The method for reprocessing a semiconductor substrate according to claim 1, wherein the third etching treatment is performed by using a solution containing hydrofluoric acid. 7. The method for reprocessing a semiconductor substrate according to claim 1, wherein the polishing treatment is performed by using chemical-mechanical polishing (CMP). 8. The method for reprocessing a semiconductor substrate according to claim 1, wherein nitric acid is used as the first substance that oxidizes the semiconductor material included in the semiconductor substrate;wherein hydrofluoric acid is used as the second substance that dissolves the oxidized semiconductor material; andwherein acetic acid is used as the third substance that controls the speed of oxidation of the semiconductor material and the speed of dissolution of the oxidized semiconductor material. 9. The method for fabricating an SOI substrate according to claim 1, after the polishing treatment, further comprising steps of: forming an insulating layer on the semiconductor substrate;irradiating the semiconductor substrate with ions through the insulating layer to form an embrittlement region;bringing into contact the insulating layer of the semiconductor substrate and an insulating surface of a base substrate to bond the semiconductor substrate to the base substrate, the insulating layer being interposed therebetween; andperforming a heat treatment on the bonded substrates to cleave the semiconductor substrate along the embrittlement region, whereby an SOI substrate is formed. 10. The method for fabricating an SOI substrate according to claim 1, wherein the first substance comprises a nitric acid, the second substance comprises a hydrofluoric acid, and the third substance comprises an acetic acid. 11. A method for fabricating an SOI substrate comprising: forming an insulating layer on a surface of a semiconductor substrate;irradiating the semiconductor substrate with ions through the insulating layer to form an embrittlement region;bringing into contact the insulating layer of the semiconductor substrate and an insulating surface of a base substrate to bond the semiconductor substrate to the base substrate, the insulating layer being interposed therebetween;performing a heat treatment on the bonded substrates to cleave the semiconductor substrate along the embrittlement region, whereby a first SOI substrate is formed and whereby a first damaged semiconductor region and a projection portion are formed on the semiconductor substrate, the projection portion including a second damaged semiconductor region and a portion of the insulating layer over the second damaged semiconductor region;after the heat treatment, performing a first etching treatment on the semiconductor substrate, whereby the insulating layer is removed;performing a second etching treatment on the semiconductor substrate, after performing the first etching treatment, by using a solution containing a first substance capable of oxidizing a semiconductor material included in the semiconductor substrate, a second substance capable of dissolving an oxidized semiconductor material, and a third substance capable of controlling a speed of oxidation of the semiconductor material and a speed of dissolution of the oxidized semiconductor material, whereby the first and the second damaged semiconductor regions are removed selectively with respect to a non-damaged semiconductor region;performing a third etching treatment after the second etching treatment, whereby oxidized portions of the semiconductor material at the surface of the semiconductor substrate are removed;forming an oxide film on a surface of the semiconductor substrate after performing the third etching treatment; andperforming a polishing treatment on a surface of the oxide film, whereby the surface of the semiconductor substrate is exposed and planarized. 12. The method for fabricating an SOI substrate according to claim 11, further comprising a step of performing a bonding strength enhancing heat treatment on the bonded substrates. 13. The method for fabricating an SOI substrate according to claim 11, wherein the projection portion corresponds to a peripheral region of the semiconductor substrate. 14. The method for fabricating an SOI substrate according to claim 11, wherein the third etching treatment and the formation of the oxide film are repeatedly performed. 15. The method for fabricating an SOI substrate according to claim 11, further comprising the step of repeatedly forming a second oxide film and removing the second oxide film at the surface of the semiconductor substrate after the third etching treatment. 16. The method for fabricating an SOI substrate according to claim 11, wherein the oxide film is formed using an aqueous solution containing ozone. 17. The method for fabricating an SOI substrate according to claim 11, wherein the third etching treatment is performed by using a solution containing hydrofluoric acid. 18. The method for fabricating an SOI substrate according to claim 11, wherein the polishing treatment is performed by using chemical-mechanical polishing (CMP). 19. The method for fabricating an SOI substrate according to claim 11, wherein nitric acid is used as the first substance that oxidizes the semiconductor material included in the semiconductor substrate;wherein hydrofluoric acid is used as the second substance that dissolves the oxidized semiconductor material; andwherein acetic acid is used as the third substance that controls the speed of oxidation of the semiconductor material and the speed of dissolution of the oxidized semiconductor material. 20. The method for fabricating an SOI substrate according to claim 11, wherein the semiconductor substrate has a peripheral region thinner than a central region. 21. The method for fabricating an SOI substrate according to claim 11, after the polishing treatment, further comprising steps of: forming an insulating layer on the semiconductor substrate;irradiating the semiconductor substrate with ions through the insulating layer to form an embrittlement region;bringing into contact the insulating layer of the semiconductor substrate and an insulating surface of a second base substrate to bond the semiconductor substrate to the second base substrate, the insulating layer being interposed therebetween; andperforming a heat treatment on the bonded substrates to cleave the semiconductor substrate along the embrittlement region, whereby a second SOI substrate is formed. 22. The method for fabricating an SOI substrate according to claim 11, wherein the first substance comprises a nitric acid, the second substance comprises a hydrofluoric acid, and the third substance comprises an acetic acid.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (62)
Mitani,Kiyoshi; Demizu,Kiyoshi; Yokokawa,Isao; Ohmi,Tadahiro; Sugawa,Shigetoshi, Bonded wafer and method of producing bonded wafer.
Hiroji Aga JP; Naoto Tate JP; Kiyoshi Mitani JP, Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method.
Kuwahara Susumu,JPX ; Mitani Kiyoshi,JPX ; Aga Hiroji,JPX ; Wada Masae,JPX, Method of recycling a delaminated wafer and a silicon wafer used for the recycling.
Delprat,Daniel; Neyret,Eric; Kononchuk,Oleg; Reynaud,Patrick; Stinco,Michael, Methods for manufacturing compound-material wafers and for recycling used donor substrates.
Forbes, Leonard, Methods for stressing semiconductor material structures to improve electron and/or hole mobility of transistor channels fabricated therefrom, and semiconductor devices including such structures.
Sakaguchi, Kiyofumi; Yonehara, Takao; Sato, Nobuhiko, Process for manufacturing a semiconductor substrate as well as a semiconductor thin film, and multilayer structure.
Takafuji, Yutaka; Itoga, Takashi, Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate.
Takafuji,Yutaka; Itoga,Takashi, Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate.
Al Bayati,Amir; Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Gallo,Biagio; Nguyen,Andrew, Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement.
Iyer Subramanian S. (Yorktown Heights NY) Baran Emil (Brewster NY) Mastroianni Mark L. (Hopewell Jct. NY) Craven Robert A. (Olivette MO), Single-etch stop process for the manufacture of silicon-on-insulator substrates.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.