IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0960454
(2010-12-03)
|
등록번호 |
US-8319355
(2012-11-27)
|
우선권정보 |
TW-99139384 A (2010-11-16) |
발명자
/ 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
2 인용 특허 :
6 |
초록
▼
Disclosed herein is a light emitting device, which includes a first substrate, a protective layer, a second substrate, a buffer member and a sealant. The first substrate has an illuminating member thereon. The protective layer covers the illuminating member and has a first coefficient of thermal exp
Disclosed herein is a light emitting device, which includes a first substrate, a protective layer, a second substrate, a buffer member and a sealant. The first substrate has an illuminating member thereon. The protective layer covers the illuminating member and has a first coefficient of thermal expansion. The second substrate is disposed over the protective layer. The buffer member is disposed between the first and second substrates and surrounds the protective layer, wherein the buffer member has a second coefficient of thermal expansion which is less than the first coefficient. The sealant surrounds the buffer member and seals off the space between the first and second substrates, wherein the sealant has a third coefficient of thermal expansion which is less than the second coefficient.
대표청구항
▼
1. A light emitting device, comprising: a first substrate having an illuminating member thereon;a protective layer covering the illuminating member and having a first coefficient of thermal expansion;a second substrate disposed over the protective layer;a buffer member disposed between the first and
1. A light emitting device, comprising: a first substrate having an illuminating member thereon;a protective layer covering the illuminating member and having a first coefficient of thermal expansion;a second substrate disposed over the protective layer;a buffer member disposed between the first and second substrates and surrounding the protective layer, wherein the buffer member has a second coefficient of thermal expansion which is less than the first coefficient, wherein the buffer member comprises a polymeric resin and a plurality of inorganic oxide particles dispersed in the polymeric resin, wherein the inorganic oxide particles has a concentration of about 20% to about 80% by weight of the buffer member; anda sealant disposed between the first and second substrates and surrounding the buffer member, wherein the sealant has a third coefficient of thermal expansion which is less than the second coefficient, wherein the concentration of the inorganic oxide particle has a maximum value at an end position in contact with the sealant. 2. The light emitting device of claim 1, wherein the buffer member is in direct contact with the sealant and the protective layer. 3. The light emitting device of claim 1, wherein the inorganic oxide is selected from the group consisting of silicon dioxide, titanium dioxide, zinc oxide, zirconium dioxide, ferrite oxide, antimony oxide, phosphorous oxide, aluminum oxide, boron oxide, tungsten oxide, magnesium oxide, bismuth oxide, vanadium oxide, calcium oxide, barium oxide, lithium oxide, sodium oxide, potassium oxide, tellurium oxide, lead oxide, tin oxide, ruthenium oxide, rubidium oxide, rhodium oxide, and copper oxide. 4. The light emitting device of claim 1, wherein the inorganic oxide particles has a particle size ranging from about 10 nm to about 500 nm. 5. The light emitting device of claim 1, wherein the polymeric resin comprises a material selected from the group consisting of acrylic resin, epoxy resin and a combination thereof. 6. The light emitting device of claim 1, wherein the concentration of the inorganic oxide particle increases with a distance from an interface between the protective layer and the buffer member. 7. The light emitting device of claim 1, wherein the first coefficient ranges from about 70×10−6/K to about 300×10−6/K. 8. The light emitting device of claim 1, wherein the second coefficient ranges from about 1×10−6/K to about 300×10−6/K. 9. The light emitting device of claim 1, wherein the third coefficient ranges from about 1×10−6/K to about 10×10−6/K. 10. The light emitting device of claim 1, wherein the illuminating member is an organic light emitting element, a polymeric light emitting element or a phosphor layer. 11. The light emitting device of claim 1, wherein the protective layer comprises a material selected from the group consisting of acrylic resin, epoxy resin and a combination thereof. 12. The light emitting device of claim 1, wherein the sealant comprises at least one material selected from the group consisting of silicon dioxide (SiO2), titanium oxide (TiO2), zinc oxide (ZnO), zirconium dioxide (ZrO2), ferrite oxide (Fe2O3), antimony oxide (Sb2O3), phosphorous oxide (P2O5), aluminum oxide (Al2O3), boron oxide (B2O3), tungsten oxide (WO3), magnesium oxide (MgO), bismuth oxide (Bi2O3), vanadium oxide (V2O5), calcium oxide (CaO), barium oxide (BaO), lithium oxide (Li2O), sodium oxide (Na2O), potassium oxide (K2O), tellurium oxide (TeO2), lead oxide (PbO), tin oxide (SnO), ruthenium oxide (Ru2O), rubidium oxide (Rb2O), rhodium oxide (Rh2O) and copper oxide (CuO). 13. The light emitting device of claim 1, wherein the second coefficient of thermal expansion decreases with a distance from the protective layer. 14. The light emitting device of claim 1, wherein the second coefficient of thermal expansion has a maximum value at an end portion adjacent to the protective layer. 15. The light emitting device of claim 1, wherein the sealant has a width of about 500 μm to about 1000 μm. 16. The light emitting device of claim 1, wherein the sealant has a thickness of about 8 μm to about 30 μm. 17. The light emitting device of claim 1, wherein the buffer member has a width ranging from about 100 μm to about 500 μm. 18. The light emitting device of claim 1, wherein the buffer member has a thickness of about 8 μm to about 30 μm.
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