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Techniques for forming thin films by implantation with reduced channeling

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/30
출원번호 US-0778989 (2010-05-12)
등록번호 US-8329557 (2012-12-11)
발명자 / 주소
  • Brailove, Adam
  • Liu, Zuqin
  • Henley, Francois J.
  • Lamm, Albert J.
출원인 / 주소
  • Silicon Genesis Corporation
대리인 / 주소
    Kilpatrick Townsend & Stockton LLP
인용정보 피인용 횟수 : 5  인용 특허 : 240

초록

Embodiments of the present invention relate to the use of a particle accelerator beam to form thin films of material from a bulk substrate. In particular embodiments, a bulk substrate having a top surface is exposed to a beam of accelerated particles. Then, a thin film of material is separated from

대표청구항

1. A method comprising: providing a substrate having a surface region and a thickness;generating a beam of accelerated particles;scanning the beam in two dimensions over the surface region to form a cleave region beneath the surface region and defining a thickness of material to be detached;during t

이 특허에 인용된 특허 (240)

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이 특허를 인용한 특허 (5)

  1. Gimbert, Jocelyne, High dose implantation for ultrathin semiconductor-on-insulator substrates.
  2. Gimbert, Jocelyne, High dose implantation for ultrathin semiconductor-on-insulator substrates.
  3. Dotsenko, Vladimir V., Superconductive multi-chip module for high speed digital circuits.
  4. Fong, Theodore E.; Current, Michael I., Three dimensional integrated circuit.
  5. Fong, Theodore E.; Current, Michael I., Three dimensional integrated circuit.
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