초록 ▼

The invention involves the integration of curved micro-mirrors over a photodiode active area (collection area) in a CMOS image sensor (CIS) process. The curved micro-mirrors reflect light that has passed through the collection area back into the photo diode. The curved micro-mirrors are best impleme

The invention involves the integration of curved micro-mirrors over a photodiode active area (collection area) in a CMOS image sensor (CIS) process. The curved micro-mirrors reflect light that has passed through the collection area back into the photo diode. The curved micro-mirrors are best implemented in a backside illuminated device (BSI).

대표청구항 ▼

1. An image sensor comprising: a light sensitive element configured to receive light from a light-incident side of the image sensor;a pre-metal dielectric layer;a micro-mirror coupled to the pre-metal dielectric layer such that the light sensitive element is between the light incident side of the im

1. An image sensor comprising: a light sensitive element configured to receive light from a light-incident side of the image sensor;a pre-metal dielectric layer;a micro-mirror coupled to the pre-metal dielectric layer such that the light sensitive element is between the light incident side of the image sensor and the micro-mirror, wherein the micro-mirror includes: a micro-lens coupled to the pre-metal dielectric layer; anda metal layer coupled to the micro-lens; anda layer of dielectric material covering the micro-mirror. 2. The image sensor as in claim 1, wherein the micro-mirror is curved and disposed above the pre-metal dielectric layer. 3. The image sensor of claim 1, wherein the micro-mirror is disposed to redirect incident light back through to the light sensitive element. 4. The image sensor of claim 1, wherein the light sensitive element includes a photodiode. 5. The image sensor of claim 1, wherein the micro-lens is a first micro-lens and wherein the image sensor further includes a second micro-lens disposed on the light-incident side of the image sensor, such that the light sensitive element is disposed between the first micro-lens and the second micro-lens. 6. A backside illuminated image sensor comprising: a light sensitive element configured to receive light from a backside of the image sensor;a pre-metal dielectric layer;a micro-mirror coupled to the pre-metal dielectric layer such that the light sensitive element is between the backside of the image sensor and the micro-mirror, wherein the micro-mirror includes: a micro-lens coupled to the pre-metal dielectric layer; anda metal layer coupled to the micro-lens; anda layer of dielectric material covering the micro-mirror. 7. The image sensor as in claim 6, wherein the micro-mirror is curved and disposed above the pre-metal dielectric layer. 8. The image sensor of claim 6, wherein the micro-mirror is disposed to redirect incident light back through to the light sensitive element. 9. The image sensor of claim 6, wherein the light sensitive element includes a photodiode. 10. The image sensor of claim 6, wherein the micro-lens is a first micro-lens and wherein the image sensor further includes a second micro-lens disposed on the backside of the image sensor, such that the light sensitive element is disposed between the first micro-lens and the second micro-lens.