Method for producing porous microneedles and their use
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B44C-001/22
C25F-003/00
출원번호
US-0227509
(2007-04-27)
등록번호
US-8354033
(2013-01-15)
우선권정보
DE-10 2006 028 781 (2006-06-23)
국제출원번호
PCT/EP2007/054175
(2007-04-27)
§371/§102 date
20090218
(20090218)
국제공개번호
WO2007/147671
(2007-12-27)
발명자
/ 주소
Scholten, Dick
Cassemeyer, Julia
Stumber, Michael
Laermer, Franz
Feyh, Ando
Maeurer, Christian
출원인 / 주소
Robert Bosch GmbH
인용정보
피인용 횟수 :
1인용 특허 :
1
초록▼
A method for producing porous microneedles (10) situated in an array on a silicon substrate includes: providing a silicon substrate, applying a first etching mask, patterning microneedles using a DRIE process (“deep reactive ion etching”), removing the first etching mask, at least partially porosify
A method for producing porous microneedles (10) situated in an array on a silicon substrate includes: providing a silicon substrate, applying a first etching mask, patterning microneedles using a DRIE process (“deep reactive ion etching”), removing the first etching mask, at least partially porosifying the Si substrate, the porosification beginning on the front side of the Si substrate and a porous reservoir being formed.
대표청구항▼
1. A method for producing porous microneedles situated in an array on a silicon substrate, comprising: providing a silicon substrate;applying a first etching mask on the silicon substrate;patterning microneedles using a deep reactive ion etching (DRIE) process;removing the first etching mask; andpor
1. A method for producing porous microneedles situated in an array on a silicon substrate, comprising: providing a silicon substrate;applying a first etching mask on the silicon substrate;patterning microneedles using a deep reactive ion etching (DRIE) process;removing the first etching mask; andporosifying the silicon substrate to a limited extent to form a first porosified layer adjacent to a second, non-porosified layer which remains in the silicon substrate;wherein: the porosification begins on a front side of the silicon substrate and forms a porous reservoir;during the patterning of the microneedles, an inner passage is etched into each microneedle; andthe first porosified layer is transformed, by an isotropic etching process in the second, non-porosified layer, into a state that is accessible from a back side of the silicon substrate. 2. The method as recited in claim 1, wherein the inner passages are etched to be asymmetrical to the respective centers of the respective microneedles into which they are etched. 3. The method as recited in claim 1, wherein each of at least one of the inner passages is etched asymmetrically to the middle of the respective needle. 4. The method as recited in claim 1, wherein the inner passages are extended through the second, non-porosified layer to a back side of the silicon substrate using a second DRIE process. 5. The method as recited in claim 4, wherein the microneedles are patterned to have at least one of a square shape, a circular shape and a star shape when viewed from the top. 6. The method as recited in claim 4, wherein, during the patterning of the microneedles, a tapering is effected in the upper region of each microneedle by isotropic etching. 7. The method as recited in claim 4, wherein the microneedles are configured for application of medications. 8. The method as recited in claim 1, wherein the isotropic etching process is implemented, after the partial porosification of the silicon substrate, in an anodizing process having an electric current flow through an electrical polishing process, while reversing the direction of the current, and while using a second etching mask at the back side of the silicon substrate. 9. The method as recited in claim 1, wherein the inner passages of the microneedles are etched at the same time. 10. The method as recited in claim 1, wherein the microneedles are patterned to have at least one of a square shape, a circular shape and a star shape when viewed from the top. 11. The method as recited in claim 1, wherein, during the patterning of the microneedles, a tapering is effected in the upper region of each microneedle by isotropic etching. 12. The method as recited in claim 1, wherein the microneedles are configured for application of medications.
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이 특허에 인용된 특허 (1)
Mark G. Allen ; Mark R. Prausnitz ; Devin V. McAllister ; Florent Paul Marcel Cros, Microneedle devices and methods of manufacture and use thereof.
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