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Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/00
출원번호 US-0213036 (2008-06-13)
등록번호 US-8354674 (2013-01-15)
우선권정보 JP-2007-173311 (2007-06-29)
발명자 / 주소
  • Kimura, Hajime
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
인용정보 피인용 횟수 : 49  인용 특허 : 57

초록

It is an object to provide a semiconductor device which has a large size and operates at high speed. A top gate transistor which includes a semiconductor layer of single-crystal and a bottom gate transistor which includes a semiconductor layer of amorphous silicon (microcrystalline silicon) are form

대표청구항

1. A semiconductor device comprising: a first semiconductor layer over a substrate;a first insulating layer over the first semiconductor layer;a first conductive layer and a second conductive layer over the first insulating layer;a second insulating layer over the first conductive layer and the seco

이 특허에 인용된 특허 (57)

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  9. Takasu Hiroaki (Tokyo JPX) Kojima Yoshikazu (Tokyo JPX) Kamiya Masaaki (Tokyo JPX) Yamazaki Tsuneo (Tokyo JPX) Suzuki Hiroshi (Tokyo JPX) Taguchi Masaaki (Tokyo JPX) Takano Ryuichi (Tokyo JPX) Yabe S, Light valve device making.
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  26. Yamazaki, Shunpei, Nonvolatile memory and electronic apparatus.
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  33. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
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  54. Iwasaki,Tatsuya, Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer.
  55. Kawasaki, Masashi; Ohno, Hideo, Transistor and semiconductor device.
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이 특허를 인용한 특허 (49)

  1. Yamazaki, Shunpei, Display device.
  2. Yamazaki, Shunpei, Display device.
  3. Kimura, Hajime; Akimoto, Kengo; Tsubuku, Masashi; Sasaki, Toshinari, Display device and electronic device.
  4. Yamazaki, Shunpei; Koyama, Jun; Hirakata, Yoshiharu, Liquid crystal display device and electronic device.
  5. Yamazaki, Shunpei; Tsubuku, Masashi; Akimoto, Kengo; Ohara, Hiroki; Honda, Tatsuya; Omata, Takatsugu; Nonaka, Yusuke; Takahashi, Masahiro; Miyanaga, Akiharu, Method for manufacturing oxide semiconductor film.
  6. Hatano, Takehisa; Tezuka, Sachiaki; Isobe, Atsuo, Method for manufacturing semiconductor device.
  7. Hatano, Takehisa; Tezuka, Sachiaki; Isobe, Atsuo, Method for manufacturing semiconductor device.
  8. Sasaki, Toshinari; Sakata, Junichiro; Ohara, Hiroki; Yamazaki, Shunpei, Method for manufacturing semiconductor device.
  9. Kato, Kiyoshi; Koyama, Jun, Nonvolatile latch circuit and logic circuit, and semiconductor device using the same.
  10. Kato, Kiyoshi; Koyama, Jun, Nonvolatile latch circuit and logic circuit, and semiconductor device using the same.
  11. Kato, Kiyoshi; Koyama, Jun, Nonvolatile latch circuit and logic circuit, and semiconductor device using the same.
  12. Kato, Kiyoshi; Koyama, Jun, Semiconductor device.
  13. Kato, Kiyoshi; Koyama, Jun, Semiconductor device.
  14. Kato, Kiyoshi; Koyama, Jun, Semiconductor device.
  15. Kato, Kiyoshi; Koyama, Jun, Semiconductor device.
  16. Saito, Toshihiko, Semiconductor device.
  17. Saito, Toshihiko, Semiconductor device.
  18. Saito, Toshihiko, Semiconductor device.
  19. Saito, Toshihiko, Semiconductor device.
  20. Yamazaki, Shunpei; Ando, Yoshinori, Semiconductor device.
  21. Yamazaki, Shunpei; Ando, Yoshinori, Semiconductor device.
  22. Yamazaki, Shunpei; Tsubuku, Masashi; Noda, Kosei; Toyotaka, Kouhei; Watanabe, Kazunori; Harada, Hikaru, Semiconductor device.
  23. Yamazaki, Shunpei; Tsubuku, Masashi; Noda, Kosei; Toyotaka, Kouhei; Watanabe, Kazunori; Harada, Hikaru, Semiconductor device.
  24. Yamazaki, Shunpei; Tsubuku, Masashi; Noda, Kosei; Toyotaka, Kouhei; Watanabe, Kazunori; Harada, Hikaru, Semiconductor device.
  25. Yamazaki, Shunpei; Koyama, Jun; Miyake, Hiroyuki, Semiconductor device and display device comprising oxide semiconductor layer.
  26. Inoue, Hiroki; Kato, Kiyoshi; Matsuzaki, Takanori; Nagatsuka, Shuhei, Semiconductor device and driving method thereof.
  27. Inoue, Hiroki; Kato, Kiyoshi; Matsuzaki, Takanori; Nagatsuka, Shuhei, Semiconductor device and driving method thereof.
  28. Inoue, Hiroki; Kato, Kiyoshi; Matsuzaki, Takanori; Nagatsuka, Shuhei, Semiconductor device and driving method thereof.
  29. Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.
  30. Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.
  31. Sakata, Junichiro; Maruyama, Tetsunori; Imoto, Yuki, Semiconductor device and method for manufacturing the same.
  32. Sasaki, Toshinari; Sakata, Junichiro; Ohara, Hiroki; Yamazaki, Shunpei, Semiconductor device and method for manufacturing the same.
  33. Yamazaki, Shunpei, Semiconductor device and method for manufacturing the same.
  34. Yamazaki, Shunpei, Semiconductor device and method for manufacturing the same.
  35. Yamazaki, Shunpei; Akimoto, Kengo, Semiconductor device and method for manufacturing the same.
  36. Yamazaki, Shunpei; Hosoba, Miyuki; Hiraishi, Suzunosuke, Semiconductor device and method for manufacturing the same.
  37. Yamazaki, Shunpei, Semiconductor device comprising oxide semiconductor.
  38. Hatano, Takehisa; Tezuka, Sachiaki; Isobe, Atsuo, Semiconductor device comprising oxide semiconductor film.
  39. Yamazaki, Shunpei, Semiconductor device has an oxide semiconductor layer containing a C-axis aligned crystal.
  40. Yamazaki, Shunpei; Takahashi, Kei; Ito, Yoshiaki, Semiconductor device having different types of thin film transistors.
  41. Yamazaki, Shunpei, Semiconductor device having switching transistor that includes oxide semiconductor material.
  42. Yamazaki, Shunpei, Semiconductor device having switching transistor that includes oxide semiconductor material.
  43. Kato, Kiyoshi; Nagatsuka, Shuhei; Inoue, Hiroki; Matsuzaki, Takanori, Semiconductor device having transistor and capacitor.
  44. Yamazaki, Shunpei, Semiconductor device having transistor including two oxide semiconductor layers having different lattice constants.
  45. Yamazaki, Shunpei; Abe, Takayuki; Shishido, Hideaki, Semiconductor device including first and second gate electrodes and stack of insulating layers.
  46. Yamazaki, Shunpei, Semiconductor device including oxide semiconductor.
  47. Yamazaki, Shunpei; Abe, Takayuki; Shishido, Hideaki, Semiconductor device including oxide semiconductor.
  48. Takeuchi, Katsuhiko; Taniguchi, Satoshi, Semiconductor device, antenna switch circuit, and radio communication apparatus.
  49. Takeuchi, Katsuhiko; Taniguchi, Satoshi, Semiconductor device, antenna switch circuit, and radio communication apparatus.
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