Microcavity light emitting diode method of manufacture
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-027/15
H01L-029/26
H01L-031/12
H01L-033/00
출원번호
US-0569337
(2009-09-29)
등록번호
US-8354679
(2013-01-15)
발명자
/ 주소
D'Evelyn, Mark P.
Sharma, Rajat
출원인 / 주소
SORAA, Inc.
인용정보
피인용 횟수 :
30인용 특허 :
75
초록▼
A high efficiency microcavity light emitting diode comprises a stack of AlxInyGa1-x-yN layers, where 0≦x, y, x+y≦1, with each layer having a high crystalline quality. The stack has a uniform thickness less than 6λ/n, with an active layer centered approximately (2i+1)λ/(4n) from a reflective electric
A high efficiency microcavity light emitting diode comprises a stack of AlxInyGa1-x-yN layers, where 0≦x, y, x+y≦1, with each layer having a high crystalline quality. The stack has a uniform thickness less than 6λ/n, with an active layer centered approximately (2i+1)λ/(4n) from a reflective electrical contact, where λ is the peak emission wavelength, n is the index of refraction at the peak emission wavelength, i is an integer, and each layer within the stack has a dislocation density below about 105 cm−2.
대표청구항▼
1. A microcavity light emitting diode, comprising: a semiconductor active layer comprising AlwInxGa1-w-xN, where 0≦w, x, w+x≦1, the semiconductor active layer being characterized by a peak emission wavelength (λ) and having an active layer surface dislocation density below about 105 cm−2;at least on
1. A microcavity light emitting diode, comprising: a semiconductor active layer comprising AlwInxGa1-w-xN, where 0≦w, x, w+x≦1, the semiconductor active layer being characterized by a peak emission wavelength (λ) and having an active layer surface dislocation density below about 105 cm−2;at least one semiconductor n-type layer comprising AluInvGa1-u-vN, where 0≦u, v, u+v≦1, the at least one semiconductor n-type layer having an n-type layer surface dislocation density below about 105 cm−2;at least one semiconductor p-type layer comprising AlqInrGa1-q-rN, where 0≦q, r, q+r≦1;an electrical contact coupled to the at least one semiconductor n-type layer;a reflective electrical contact coupled to the at least one semiconductor p-type layer and the at least one semiconductor n-type layer, the reflective electrical contact having a reflectivity greater than about 70% at the peak emission wavelength;a total thickness characterizing the semiconductor active layer, the at least one semiconductor n-type layer, and the at least one semiconductor p-type layer of less than 6λ/n; anda uniformity to within approximately ±λ/(4n) wherein n is a thickness averaged index of refraction at the peak emission wavelength characterizing the total thickness of the semiconductor active layer, the at least one semiconductor n-type layer, and the at least one semiconductor p-type layer. 2. The microcavity light emitting diode of claim 1, wherein the total thickness is less than 3λ/n. 3. The microcavity light emitting diode of claim 1, wherein the at least one semiconductor p-type layer has a p-type layer surface dislocation density below about 105 cm−2. 4. The microcavity light emitting diode of claim 1, wherein each of the active layer surface dislocation density, the n-type layer surface dislocation density, and a p-type layer surface dislocation density of the at least one semiconductor p-type layer are below 104 cm−2. 5. The microcavity light emitting diode of claim 4, wherein each of the active layer surface dislocation density, the n-type layer surface dislocation density, and the p-type layer surface dislocation density are below 103 cm−2. 6. The microcavity light emitting diode of claim 5, wherein each of the active layer surface dislocation density, the n-type layer surface dislocation density, and the p-type layer surface dislocation density are below 102 cm−2. 7. The microcavity light emitting diode of claim 1, wherein the semiconductor active layer is centered at a distance within ±λ/(8n) of (2i+1)λ/(4n), where i is an integer, from the reflective electrical contact. 8. The microcavity light emitting diode of claim 1, wherein the semiconductor active layer has an overall thickness of less than λ/(4n). 9. The microcavity light emitting diode of claim 1, wherein the total thickness is uniformly within ±λ/(4n) of jλ/(2n), where j is an integer. 10. The microcavity light emitting diode of claim 1, wherein the total thickness is uniform to within ±λ/(8n). 11. The microcavity light emitting diode of claim 1, wherein the reflectivity of the reflective electrical contact is greater than about 90%. 12. The microcavity light emitting diode of claim 1, wherein the semiconductor active layer has an active layer surface orientation within 5 degrees of {1 −1 0 0}, the at least one semiconductor n-type layer has an n-type surface orientation within 5 degrees of {1 −1 0 0}, and the at least one semiconductor p-type layer has a p-type surface orientation within 5 degrees of {1 −1 0 0}. 13. The microcavity light emitting diode of claim 1, the semiconductor active layer has an active layer surface orientation within 5 degrees of {1 1 −2 0}, the at least one semiconductor n-type layer has an n-type surface orientation within 5 degrees of {1 1 −2 0}, and the at least one semiconductor p-type layer has a p-type surface orientation within 5 degrees of {1 1 −2 0}. 14. The microcavity light emitting diode of claim 1, the semiconductor active layer has an active layer surface orientation within 5 degrees of {1 −1 0 ±1}, the at least one semiconductor n-type layer has an n-type surface orientation within 5 degrees of {1 −1 0 ±1}, and the at least one semiconductor p-type layer has a p-type surface orientation within 5 degrees of {1 −1 0 ±1}. 15. The microcavity light emitting diode of claim 1, the semiconductor active layer has an active layer surface orientation within 5 degrees of {1 −1 0 ±2}, the at least one semiconductor n-type layer has an n-type surface orientation within 5 degrees of {1 −1 0 ±2}, and the at least one semiconductor p-type layer has a p-type surface orientation within 5 degrees of {1 −1 0 ±2}. 16. The microcavity light emitting diode of claim 1, the semiconductor active layer has an active layer surface orientation within 5 degrees of {1 −1 0 ±3}, the at least one semiconductor n-type layer has an n-type surface orientation within 5 degrees of {1 −1 0 ±3}, and the at least one semiconductor p-type layer has a p-type surface orientation within 5 degrees of {1 −1 0 ±3}. 17. The microcavity light emitting diode of claim 1, the semiconductor active layer has an active layer surface orientation within 5 degrees of {1 1 −2 ±2}, the at least one semiconductor n-type layer has an n-type surface orientation within 5 degrees of {1 1 −2 ±2}, and the at least one semiconductor p-type layer has a p-type surface orientation within 5 degrees of {1 1 −2 ±2}. 18. The microcavity light emitting diode of claim 1, the semiconductor active layer has an active layer surface orientation within 5 degrees of {2 0 −2 ±1}, the at least one semiconductor n-type layer has an n-type surface orientation within 5 degrees of {2 0 −2 ±1}, and the at least one semiconductor p-type layer has a p-type surface orientation within 5 degrees of {2 0 −2 ±1}. 19. The microcavity light emitting diode of claim 1, the semiconductor active layer has an active layer surface orientation within 5 degrees of (0 0 0 1), the at least one semiconductor n-type layer has an n-type surface orientation within 5 degrees of (0 0 0 1), and the at least one semiconductor p-type layer has a p-type surface orientation within 5 degrees of (0 0 0 1). 20. The microcavity light emitting diode of claim 1, the semiconductor active layer has an active layer surface orientation within 5 degrees of (0 0 0 −1), the at least one semiconductor n-type layer has an n-type surface orientation within 5 degrees of (0 0 0 −1), and the at least one semiconductor p-type layer has a p-type surface orientation within 5 degrees of (0 0 0 −1). 21. The microcavity light emitting diode of claim 1, further comprising a tunnel junction. 22. The microcavity light emitting diode of claim 1, wherein the at least one semiconductor p-type layer and the reflective electrical contact are substantially parallel in configuration. 23. The microcavity light emitting diode of claim 1, wherein the at least one semiconductor p-type layer, the reflective electrical contact, and the one semiconductor n-type layer are in parallel configuration. 24. The microcavity light emitting diode of claim 1 further comprising a light extraction efficiency of greater than about 50%. 25. The microcavity light emitting diode of claim 1 further comprising a drive current of greater than about 100 milliamperes per square millimeter. 26. The microcavity light emitting diode of claim 1 wherein the thickness averaged index of refraction (n) is between about 2.2 and about 2.8.
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