초록 ▼

An object is to provide a method for manufacturing a semiconductor device which suppresses an influence on a semiconductor element due to entry of an impurity element, moisture, or the like from outside even in the case of thinning or removing a substrate after forming a semiconductor element over t

An object is to provide a method for manufacturing a semiconductor device which suppresses an influence on a semiconductor element due to entry of an impurity element, moisture, or the like from outside even in the case of thinning or removing a substrate after forming a semiconductor element over the substrate. A feature is to form an insulating film functioning as a protective film on at least one side of the substrate by performing surface treatment on the substrate, to form a semiconductor element such as a thin film transistor over the insulating film, and to thin the substrate. As the surface treatment, addition of an impurity element or plasma treatment is performed on the substrate. As a means for thinning the substrate, the substrate can be partially removed by performing grinding treatment, polishing treatment, or the like on the other side of the substrate.

대표청구항 ▼

1. A method for manufacturing a semiconductor device comprising the steps of: performing plasma treatment on a glass substrate using a microwave in a nitrogen atmosphere;forming an element group over the glass substrate after performing the plasma treatment; andthinning the glass substrate after for

1. A method for manufacturing a semiconductor device comprising the steps of: performing plasma treatment on a glass substrate using a microwave in a nitrogen atmosphere;forming an element group over the glass substrate after performing the plasma treatment; andthinning the glass substrate after forming the element group. 2. The method for manufacturing the semiconductor device according to claim 1, wherein the glass substrate is thinned by performing either or both grinding treatment and polishing treatment. 3. The method for manufacturing the semiconductor device according to claim 1, wherein the nitrogen atmosphere is an atmosphere containing nitrogen and a noble gas, an atmosphere containing NH3 and a noble gas, an atmosphere containing NO2 and a noble gas, or an atmosphere containing N2O and a noble gas. 4. The method for manufacturing the semiconductor device according to claim 1, wherein the plasma treatment is performed under a condition that an electron density is in the range of 1×1011 cm−3 to 1×1013 cm−3 and an electron temperature is in the range of 0.5 eV to 1.5 eV. 5. A method for manufacturing a semiconductor device comprising the steps of: performing plasma treatment on a glass substrate using a microwave in a nitrogen atmosphere;forming an element group over the glass substrate after performing the plasma treatment;thinning the glass substrate to form a thinned glass substrate; andperforming sealing with a flexible film so as to cover the thinned glass substrate and the element group. 6. The method for manufacturing the semiconductor device according to claim 5, wherein the glass substrate is thinned by performing either or both grinding treatment and polishing treatment. 7. The method for manufacturing the semiconductor device according to claim 5, wherein the nitrogen atmosphere is an atmosphere containing nitrogen and a noble gas, an atmosphere containing NH3 and a noble gas, an atmosphere containing NO2 and a noble gas, or an atmosphere containing N2O and a noble gas. 8. The method for manufacturing the semiconductor device according to claim 5, wherein the plasma treatment is performed under a condition that an electron density is in the range of 1×1011 cm−3 to 1×1013 cm−3 and an electron temperature is in the range of 0.5 eV to 1.5 eV. 9. A method for manufacturing a semiconductor device comprising the steps of: performing plasma treatment on a substrate using a microwave in a nitrogen atmosphere;forming an element group over the substrate after performing the plasma treatment;thinning the substrate to form a thinned substrate; andperforming chemical treatment to the thinned substrate to remove the thinned substrate. 10. The method for manufacturing the semiconductor device according to claim 9, wherein the substrate is thinned by performing either or both grinding treatment and polishing treatment. 11. The method for manufacturing the semiconductor device according to claim 9, wherein the nitrogen atmosphere is an atmosphere containing nitrogen and a noble gas, an atmosphere containing NH3 and a noble gas, an atmosphere containing NO2 and a noble gas, or an atmosphere containing N2O and a noble gas. 12. The method for manufacturing the semiconductor device according to claim 9, wherein the plasma treatment is performed under a condition that an electron density is in the range of 1×1011 cm−3 to 1×1013 cm−3 and an electron temperature is in the range of 0.5 eV to 1.5 eV. 13. A method for manufacturing a semiconductor device comprising the steps of: performing plasma treatment on a substrate using a microwave in a nitrogen atmosphere;forming an element group over the substrate after performing the plasma treatment;thinning the substrate to form a thinned substrate;performing chemical treatment to the thinned substrate to remove the thinned substrate; andperforming sealing with a flexible film so as to cover the element group. 14. The method for manufacturing the semiconductor device according to claim 13, wherein the substrate is thinned by performing either or both grinding treatment and polishing treatment. 15. The method for manufacturing the semiconductor device according to claim 13, wherein the nitrogen atmosphere is an atmosphere containing nitrogen and a noble gas, an atmosphere containing NH3 and a noble gas, an atmosphere containing NO2 and a noble gas, or an atmosphere containing N2O and a noble gas. 16. The method for manufacturing the semiconductor device according to claim 13, wherein the plasma treatment is performed under a condition that an electron density is in the range of 1×1011 cm−3 to 1×1013 cm−3 and an electron temperature is in the range of 0.5 eV to 1.5 eV. 17. A method for manufacturing a semiconductor device comprising the steps of: performing plasma treatment on a glass substrate using a microwave in a nitrogen atmosphere;forming an element group over the glass substrate after performing the plasma treatment; andremoving the glass substrate. 18. The method for manufacturing the semiconductor device according to claim 17, wherein the glass substrate is removed by performing at least chemical treatment. 19. The method for manufacturing the semiconductor device according to claim 17, wherein sealing is performed with a flexible film so as to cover the element group. 20. The method for manufacturing the semiconductor device according to claim 17, wherein the nitrogen atmosphere is an atmosphere containing nitrogen and a noble gas, an atmosphere containing NH3 and a noble gas, an atmosphere containing NO2 and a noble gas, or an atmosphere containing N2O and a noble gas. 21. The method for manufacturing the semiconductor device according to claim 17, wherein the plasma treatment is performed under a condition that an electron density is in the range of 1×1011 cm−3 to 1×1013 cm−3 and an electron temperature is in the range of 0.5 eV to 1.5 eV.