Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/331
H01L-021/8222
출원번호
US-0762600
(2010-04-19)
등록번호
US-8361873
(2013-01-29)
우선권정보
JP-2007-173070 (2007-06-29)
발명자
/ 주소
Ohnuma, Hideto
Imahayashi, Ryota
Iikubo, Yoichi
Makino, Kenichiro
Nagamatsu, Sho
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
인용정보
피인용 횟수 :
1인용 특허 :
6
초록▼
It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like, is used, and furthe
It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like, is used, and further, to manufacture a semiconductor device with high reliability by using such an SOI substrate. A semiconductor layer which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface is irradiated with electromagnetic waves, and the surface of the semiconductor layer is subjected to polishing treatment. At least part of a region of the semiconductor layer is melted by irradiation with electromagnetic waves, and a crystal defect in the semiconductor layer can be reduced. Further, the surface of the semiconductor layer can be polished and planarized by polishing treatment.
대표청구항▼
1. A method for manufacturing a semiconductor device comprising: irradiating one surface of a semiconductor substrate with an ion to form an embrittlement layer at a given depth from the one surface of the semiconductor substrate;bonding the one surface of the semiconductor substrate and a supportin
1. A method for manufacturing a semiconductor device comprising: irradiating one surface of a semiconductor substrate with an ion to form an embrittlement layer at a given depth from the one surface of the semiconductor substrate;bonding the one surface of the semiconductor substrate and a supporting substrate with an insulating layer interposed therebetween;separating the semiconductor substrate from the supporting substrate at the embrittlement layer to form a semiconductor layer over the supporting substrate;irradiating the semiconductor layer with a light from a lamp; andperforming a polishing treatment on a surface of the semiconductor layer after irradiating the semiconductor layer with the light from the lamp. 2. A method for manufacturing a semiconductor device according to claim 1, wherein the supporting substrate is glass. 3. A method for manufacturing a semiconductor device according to claim 1, wherein the irradiating step is performed in a nitrogen atmosphere which contains oxygen of 10 ppm or less. 4. A method for manufacturing a semiconductor device according to claim 1, wherein the lamp is one of a halogen lamp and a xenon lamp. 5. A method for manufacturing a semiconductor device according to claim 1, wherein the polishing treatment is a chemical mechanical polishing. 6. A method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is one selected from the group of a portable information terminal, a camera, a mobile phone, a television device, and a computer. 7. A method for manufacturing a semiconductor device comprising: irradiating one surface of a semiconductor substrate with an ion to form an embrittlement layer at a given depth from the one surface of the semiconductor substrate;bonding the one surface of the semiconductor substrate and a supporting substrate with an insulating layer interposed therebetween;separating the semiconductor substrate from the supporting substrate at the embrittlement layer to form a semiconductor layer over the supporting substrate;irradiating the semiconductor layer with a light from a lamp for less than or equal to one second; andperforming a polishing treatment on a surface of the semiconductor layer after irradiating the semiconductor layer with the light from the lamp. 8. A method for manufacturing a semiconductor device according to claim 7, wherein the supporting substrate is glass. 9. A method for manufacturing a semiconductor device according to claim 7, wherein the irradiating step is performed in a nitrogen atmosphere which contains oxygen of 10 ppm or less. 10. A method for manufacturing a semiconductor device according to claim 7, wherein the lamp is one of a halogen lamp and a xenon lamp. 11. A method for manufacturing a semiconductor device according to claim 7, wherein the polishing treatment is a chemical mechanical polishing. 12. A method for manufacturing a semiconductor device according to claim 7, wherein the semiconductor device is one selected from the group of a portable information terminal, a camera, a mobile phone, a television device, and a computer. 13. A method for manufacturing a semiconductor device comprising: irradiating one surface of a semiconductor substrate with an ion to form an embrittlement layer at a given depth from the one surface of the semiconductor substrate;bonding the one surface of the semiconductor substrate and a supporting substrate with an insulating layer interposed therebetween;separating the semiconductor substrate from the supporting substrate at the embrittlement layer to form a semiconductor layer over the supporting substrate;performing a first polishing treatment on a surface of the semiconductor layer;irradiating the semiconductor layer with a light from a lamp; andperforming a second polishing treatment on the surface of the semiconductor layer after irradiating the semiconductor layer with the light from the lamp. 14. A method for manufacturing a semiconductor device according to claim 13, wherein the supporting substrate is glass. 15. A method for manufacturing a semiconductor device according to claim 13, wherein the irradiating step is performed in a nitrogen atmosphere which contains oxygen of 10 ppm or less. 16. A method for manufacturing a semiconductor device according to claim 13, wherein the lamp is one of a halogen lamp and a xenon lamp. 17. A method for manufacturing a semiconductor device according to claim 13, wherein the first and the second polishing treatments are a chemical mechanical polishing. 18. A method for manufacturing a semiconductor device according to claim 13, wherein the semiconductor device is one selected from the group of a portable information terminal, a camera, a mobile phone, a television device, and a computer. 19. A method for manufacturing a semiconductor device comprising: irradiating one surface of a semiconductor substrate with an ion to form an embrittlement layer at a given depth from the one surface of the semiconductor substrate;bonding the one surface of the semiconductor substrate and a supporting substrate with an insulating layer interposed therebetween;separating the semiconductor substrate from the supporting substrate at the embrittlement layer to form a semiconductor layer over the supporting substrate;performing a first polishing treatment on a surface of the semiconductor layer;irradiating the semiconductor layer with a light from a lamp for less than or equal to one second; andperforming a second polishing treatment on the surface of the semiconductor layer after irradiating the semiconductor layer with the light from the lamp. 20. A method for manufacturing a semiconductor device according to claim 19, wherein the supporting substrate is glass. 21. A method for manufacturing a semiconductor device according to claim 19, wherein the irradiating step is performed in a nitrogen atmosphere which contains oxygen of 10 ppm or less. 22. A method for manufacturing a semiconductor device according to claim 19, wherein the lamp is one of a halogen lamp and a xenon lamp. 23. A method for manufacturing a semiconductor device according to claim 19, wherein the first and the second polishing treatments are a chemical mechanical polishing. 24. A method for manufacturing a semiconductor device according to claim 19, wherein the semiconductor device is one selected from the group of a portable information terminal, a camera, a mobile phone, a television device, and a computer.
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이 특허에 인용된 특허 (6)
Hiroji Aga JP; Naoto Tate JP; Kiyoshi Mitani JP, Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method.
Ohnuma, Hideto; Imahayashi, Ryota; Iikubo, Yoichi; Makino, Kenichiro; Nagamatsu, Sho, Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device.
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