A light emitting element having an organic compound, which can be extended its longevity is provided. According to the present invention, there is provided a constitution in which, in order to protect a light emitting element from moisture, an inorganic insulating film 312a, a stress relaxation laye
A light emitting element having an organic compound, which can be extended its longevity is provided. According to the present invention, there is provided a constitution in which, in order to protect a light emitting element from moisture, an inorganic insulating film 312a, a stress relaxation layer 312b having transparency and a hygroscopic property, and an inorganic insulating film 312c are repeatedly laminated over a cathode. The stress relaxation layer 312b having transparency and the hygroscopic property uses at least one film selected from the group consisting of a film comprising a same material as that of a layer 310, containing an organic compound, sandwiched between a cathode and an anode, a layer capable of being formed by vapor deposition, and a layer capable of being formed by coating.
대표청구항▼
1. A light emitting device comprising: a first substrate;a light emitting element over the first substrate;a laminate over the light emitting element; anda second substrate over the laminate,wherein the light emitting element comprises: an anode;a layer containing an organic light emitting compound
1. A light emitting device comprising: a first substrate;a light emitting element over the first substrate;a laminate over the light emitting element; anda second substrate over the laminate,wherein the light emitting element comprises: an anode;a layer containing an organic light emitting compound over the anode; anda cathode over the layer containing the organic light emitting compound,wherein the laminate comprises: a first inorganic insulating film;a first film comprising an organic compound having a hygroscopic property on the first inorganic insulating film; anda second inorganic insulating film on the first film,wherein the light emitting element is covered by the laminate,wherein a top surface of the cathode is in contact with the first inorganic insulating film, andwherein a luminescence from the light emitting element is passed through the first substrate. 2. The light emitting device according to claim 1, wherein the first film has a smaller stress than that of at least one of the first inorganic insulating film and the second inorganic insulating film. 3. The light emitting device according to claim 1, wherein at least one of the first inorganic insulating film and the second inorganic insulating film comprises at least one film selected from the group consisting of a silicon nitride film, a silicon oxide film, a silicon oxynitride film, a DLC film, a CN film, and a laminate thereof. 4. The light emitting device according to claim 1, wherein at least one of the first inorganic insulating film and the second inorganic insulating film is a silicon nitride film formed by RF sputtering using silicon as a target. 5. The light emitting device according to claim 1, wherein the light emitting element and a TFT connected to the light emitting element are provided over the first substrate. 6. The light emitting device according to claim 1, wherein the first film is formed by vapor deposition. 7. The light emitting device according to claim 1, wherein the first film is a polymeric material film containing the organic compound, obtained by coating. 8. A semiconductor device comprising the light emitting device of claim 1, wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal. 9. The light emitting device according to claim 1, wherein the first film comprises a material selected from the group consisting of α-NPD (4,4′-bisbiphenyl), BCP (bathocuproin), MTDATA (4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine), and Alg3 (a tris-8-quinolinolate aluminum complex). 10. The light emitting device according to claim 1, wherein the first film comprises a material selected from the group consisting of MgO, SrO2, and SrO. 11. A light emitting device comprising: a first substrate;a light emitting element over the first substrate;a laminate over the light emitting element; anda second substrate over the laminate,wherein the light emitting element comprises: an anode;a layer containing an organic light emitting compound over the anode; anda cathode over the layer containing the organic light emitting compound,wherein the laminate comprises: a first inorganic insulating film;a first film comprising an organic compound having a hygroscopic property on the first inorganic insulating film; anda second inorganic insulating film on the first film,wherein the light emitting element is covered by the laminate,wherein a top surface of the cathode is in contact with the first inorganic insulating film,wherein a luminescence from the light emitting element is passed through the first substrate, andwherein the first film comprises a same material as that of at least one layer of a plurality of layers which constitute the layer containing the organic light emitting compound sandwiched between the cathode and the anode. 12. The light emitting device according to claim 11, wherein the first film has a smaller stress than that of at least one of the first inorganic insulating film and the second inorganic insulating film. 13. The light emitting device according to claim 11, wherein at least one of the first inorganic insulating film and the second inorganic insulating film comprises at least one film selected from the group consisting of a silicon nitride film, a silicon oxide film, a silicon oxynitride film, a DLC film, a CN film, and a laminate thereof. 14. The light emitting device according to claim 11, wherein at least one of the first inorganic insulating film and the second inorganic insulating film is a silicon nitride film formed by RF sputtering using silicon as a target. 15. The light emitting device according to claim 11, wherein the light emitting element and a TFT connected to the light emitting element are provided over the first substrate. 16. The light emitting device according to claim 11, wherein the first film is formed by vapor deposition. 17. The light emitting device according to claim 11, wherein the first film is a polymeric material film containing the organic compound, obtained by coating. 18. A semiconductor device comprising the light emitting device of claim 11, wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal. 19. The light emitting device according to claim 11, wherein the first film comprises a material selected from the group consisting of α-NPD (4,4′-bisbiphenyl), BCP (bathocuproin), MTDATA (4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine), and Alg3 (a tris-8-quinolinolate aluminum complex). 20. The light emitting device according to claim 11, wherein the first film comprises a material selected from the group consisting of MgO, SrO2, and SrO. 21. A light emitting device comprising: a first substrate;a light emitting element over the first substrate;a first film having a hygroscopic property over the light emitting element;a laminate over the first film; anda second substrate over the laminate,wherein the light emitting element comprises: an anode;a layer containing an organic light emitting compound over the anode; anda cathode over the layer containing the organic light emitting compound,wherein the laminate comprises: a first inorganic insulating film;a second film comprising an organic compound having a hygroscopic property on the first inorganic insulating film; anda second inorganic insulating film on the second film,wherein the first film having the hygroscopic property is covered by the laminate,wherein a top surface of the cathode is in contact with the first film, andwherein a luminescence from the light emitting element is passed through the first substrate. 22. The light emitting device according to claim 21, wherein the second film has a smaller stress than that of at least one of the first inorganic insulating film and the second inorganic insulating film. 23. The light emitting device according to claim 21, wherein at least one of the first inorganic insulating film and the second inorganic insulating film comprises at least one film selected from the group consisting of a silicon nitride film, a silicon oxide film, a silicon oxynitride film, a DLC film, a CN film, and a laminate thereof. 24. The light emitting device according to claim 21, wherein at least one of the first inorganic insulating film and the second inorganic insulating film is a silicon nitride film formed by RF sputtering using silicon as a target. 25. The light emitting device according to claim 21, wherein the light emitting element and a TFT connected to the light emitting element are provided over the first substrate. 26. The light emitting device according to claim 21, wherein the second film is formed by vapor deposition. 27. The light emitting device according to claim 21, wherein the second film is a polymeric material film containing the organic compound, obtained by coating. 28. A semiconductor device comprising the light emitting device of claim 21, wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal. 29. The light emitting device according to claim 21, wherein the second film comprises a material selected from the group consisting of α-NPD (4,4′-bisbiphenyl), BCP (bathocuproin), MTDATA (4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine), and Alq3 (a tris-8-quinolinolate aluminum complex). 30. The light emitting device according to claim 21, wherein the second film comprises a material selected from the group consisting of MgO, SrO2, and SrO. 31. A light emitting device comprising: a first substrate;a light emitting element over the first substrate;a first film having a hygroscopic property over the light emitting element;a laminate over the first film; anda second substrate over the laminate,wherein the light emitting element comprises: an anode;a layer containing an organic light emitting compound over the anode; anda cathode over the layer containing the organic light emitting compound,wherein the laminate comprises: a first inorganic insulating film;a second film comprising an organic compound having a hygroscopic property on the first inorganic insulating film; anda second inorganic insulating film on the second film,wherein the first film having the hygroscopic property is covered by the laminate,wherein a top surface of the cathode is in contact with the first film, andwherein a luminescence from the light emitting element is passed through the first substrate, andwherein the second film comprises a same material as that of at least one layer of a plurality of layers which constitute the layer containing the organic light emitting compound sandwiched between the cathode and the anode. 32. The light emitting device according to claim 31, wherein the second film has a smaller stress than that of at least one of the first inorganic insulating film and the second inorganic insulating film. 33. The light emitting device according to claim 31, wherein at least one of the first inorganic insulating film and the second inorganic insulating film comprises at least one film selected from the group consisting of a silicon nitride film, a silicon oxide film, a silicon oxynitride film, a DLC film, a CN film, and a laminate thereof. 34. The light emitting device according to claim 31, wherein at least one of the first inorganic insulating film and the second inorganic insulating film is a silicon nitride film formed by RF sputtering using silicon as a target. 35. The light emitting device according to claim 31, wherein the light emitting element and a TFT connected to the light emitting element are provided over the first substrate. 36. The light emitting device according to claim 31, wherein the second film is formed by vapor deposition. 37. The light emitting device according to claim 31, wherein the second film is a polymeric material film containing the organic compound, obtained by coating. 38. A semiconductor device comprising the light emitting device of claim 31, wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal. 39. The light emitting device according to claim 31, wherein the second film comprises a material selected from the group consisting of α-NPD (4,4′-bisbiphenyl), BCP (bathocuproin), MTDATA (4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine), and Alg3 (a tris-8-quinolinolate aluminum complex). 40. The light emitting device according to claim 31, wherein the second film comprises a material selected from the group consisting of MgO, SrO2, and SrO.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (107)
Yamazaki Shunpei,JPX, Active matrix electro-luminescent display thin film transistor.
Hidler Henry T. (35 Bayberry Rd. Danvers MA 01923) Hope Lawrence L. (402 Taylor Rd. Stow MA 01775) Davey Ernest A. (11 Esquire Dr. Peabody MA 01960) Schrank Martin P. (25 Howe St. Ipswich MA 01938), Electroluminescent display device.
Hung Liang S. ; Tang Ching W. ; Raychaudhuri Pranab K., Electron-injecting layer providing a modified interface between an organic light-emitting structure and a cathode buffer layer.
Bulovic Vladimir ; Forrest Stephen R. ; Burrows Paul ; Garbuzov Dmitri Z., High reliability, high efficiency, integratable organic light emitting devices and methods of producing same.
Tsuchiya,Kaoru, Light-emitting device having electrode formed by laminate of at least first inorganic film, organic film, and second inorganic film and method for manufacturing the same.
Burrows Paul E. ; Forrest Stephen R. ; Bulovic Vladimir ; Tian Peifang ; Brown Julie, Method for patterning light emitting devices incorporating a movable mask.
Yamazaki Shunpei,JPX ; Arai Yasuyuki,JPX ; Teramoto Satoshi,JPX, Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bo.
Hirano Hisakazu (Takatsuki JPX) Mori Kiju (Machida JPX) Watanabe Junichi (Yokohama JPX) Kondo Fumio (Yokohama JPX), Moisture trapping film for EL lamps of the organic dispersion type.
Codama Mitsufumi,JPX ; Inoue Tetsushi,JPX ; Nakaya Kenji,JPX ; Onitsuka Osamu,JPX ; Arai Michio,JPX, Organic electroluminescent color display having color transmitting layers and fluorescence converting layer with improved structure for color conversion efficiency on a color transmitting layer.
Suzuki Mutsumi,JPX ; Fukuyama Masao,JPX ; Hori Yoshikazu,JPX, Organic electroluminescent device having a protective covering comprising organic and inorganic layers.
Onitsuka Osamu,JPX ; Ebisawa Akira,JPX ; Suzuki Mitsunari,JPX ; Yamamoto Hiroshi,JPX ; Arai Michio,JPX, Organic electroluminescent display device, and method and system for making the same.
Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
Hwang Do Hoon,KRX ; Jung Sang Don,KRX ; Do Lee Mi,KRX ; Zyung Tae Hyoung,KRX ; Lee Hyang Mok,KRX ; Choi Kang Hoon,KRX, Synthetic method of soluble PPV derivatives having two silyl groups and light-emitting devices using the same.
Tanabe Hiroshi,JPX ; Yamamoto Hiroshi,JPX ; Fukuyu Kengo,JPX ; Onitsuka Osamu,JPX, System and process for fabricating an organic electroluminescent display device.
Wolk, Martin B.; Baude, Paul F.; Florczak, Jeffrey M.; McCormick, Fred B.; Hsu, Yong, Thermal transfer element and process for forming organic electroluminescent devices.
Sheats James R. ; Hueschen Mark R. ; Seaward Karen L. ; Roitman Daniel B. ; Briggs George Andrew Davidson,GBX, Transparent, flexible permeability barrier for organic electroluminescent devices.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.