IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0842497
(2010-07-23)
|
등록번호 |
US-8367226
(2013-02-05)
|
우선권정보 |
DE-10 2004 047 135 (2004-09-27) |
발명자
/ 주소 |
- Fiukowski, Joerg
- List, Matthias
- Hecht, Hans-Christian
- Milde, Falk
|
출원인 / 주소 |
- Von Ardenne Anlagentechnik GmbH
|
인용정보 |
피인용 횟수 :
1 인용 특허 :
8 |
초록
▼
A layer system that can be annealed comprises a transparent substrate, preferably a glass substrate, and a first layer sequence which is applied directly to the substrate or to one or more bottom layers that are deposited onto the substrate. The layer sequence includes a substrate-proximal blocking
A layer system that can be annealed comprises a transparent substrate, preferably a glass substrate, and a first layer sequence which is applied directly to the substrate or to one or more bottom layers that are deposited onto the substrate. The layer sequence includes a substrate-proximal blocking layer, a selective layer and a substrate-distal blocking layer. Also provided is a method for producing a layer system that can be annealed and has a sufficient quality even under critical climatic conditions and/or undefined conditions of the substrate. During the heat treatment (annealing, bending), the color location of the layer system is maintained substantially stable and the color location can be widely varied at a low emissivity of the layer system. For this purpose, a first dielectric intermediate layer is interposed between the substrate-proximal blocking layer and the selective layer and is configured as a substoichiometric gradient layer.
대표청구항
▼
1. Annealable layer system comprising a transparent substrate, and a first layer sequence which is applied to the substrate directly or to one or more bottom layers which are deposited on the substrate, wherein the layer sequence comprises a substrate-proximal blocking layer comprising NiCrOx, a fir
1. Annealable layer system comprising a transparent substrate, and a first layer sequence which is applied to the substrate directly or to one or more bottom layers which are deposited on the substrate, wherein the layer sequence comprises a substrate-proximal blocking layer comprising NiCrOx, a first selective layer, and a substrate-distal blocking layer comprising NiCrOx, and a first dielectric intermediate layer of ZnAlOx is disposed between the substrate-proximal blocking layer and the first selective layer, and the first dielectric intermediate layer comprises a gradient layer with a gradient that passes from a stoichiometric part of ZnAlO to a substoichiometric part of ZnAlOx, and where the gradient points in a direction of the first selective layer, such that the substoichiometric part of the gradient layer lies on a side of the first selective layer. 2. Annealable layer system according to 1, wherein the layer sequence comprises a TiO2 bottom layer, the substrate-proximal blocking layer comprising NiCrOx, the gradient layer with a gradient that passes from a stoichiometric part of ZnAlO to a substoichiometric part of ZnAlOx, and where the gradient points in a direction of the first selective layer, such that the substoichiometric part of the gradient layer lies on a side of the first selective laver, the first selective layer comprising Ag, the substrate-distal blocking layer comprising NiCrOx , an SnO2 layer, and an Si3N4 layer. 3. Annealable layer system according to claim 1, further comprising, between the first selective layer and the substrate-distal blocking layer, a second dielectric intermediate layer. 4. Annealable layer system according to claim 1, further comprising a second layer sequence disposed on the first layer sequence, directly or with additional layers lying therebetween, the second layer sequence comprising a second substrate-proximal blocking laver, a second selective laver, a second substrate-distal blocking laver, and a second dielectric intermediate layer of ZnAlOx disposed between the second substrate-proximal blocking layer and the second selective layer, and the second dielectric intermediate layer is at least partially sub stoichiometric. 5. Annealable layer system according to claim 1, wherein the transparent substrate comprises a glass substrate. 6. Annealable layer system according to claim 1, wherein the layer sequence comprises a substrate-proximal blocking layer, a gradient layer with a gradient that passes from a stoichiometric part of ZnAlO to a substoichiometric part of ZnAlOx, and where the gradient points in a direction of the first selective layer, such that the substoichiometric part of the gradient layer lies on a side of the first selective layer, the first selective layer of Ag, the substrate-distal blocking layer of NiCrOx, an SnO2 layer, and an Si3N4 layer.
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