초록 ▼

An anchored conductive damascene buried in a multi-density dielectric layer and method for forming the same, the anchored conductive damascene including a dielectric layer with an opening extending through a thickness of the dielectric layer; wherein the dielectric layer comprises at least one relat

An anchored conductive damascene buried in a multi-density dielectric layer and method for forming the same, the anchored conductive damascene including a dielectric layer with an opening extending through a thickness of the dielectric layer; wherein the dielectric layer comprises at least one relatively higher density portion and a relatively lower density portion, the relatively lower density portion forming a contiguous major portion of the dielectric layer; and, wherein the opening in the relatively lower density portion has a lateral dimension relatively larger compared to the relatively higher density portion to form anchoring steps.

대표청구항 ▼

1. A dual damascene with recessed steps for anchoring a conductive filling comprising: a dielectric layer, comprising at least two relatively higher density portions and a contiguous relatively lower density portion sandwiched between the at least two relatively higher density portions, said relativ

1. A dual damascene with recessed steps for anchoring a conductive filling comprising: a dielectric layer, comprising at least two relatively higher density portions and a contiguous relatively lower density portion sandwiched between the at least two relatively higher density portions, said relatively lower density portion having a thickness greater than about 68 percent of a total thickness of said dielectric layer;a dual damascene opening extending through a full thickness of the dielectric layer;a major portion of trench and via portions of said dual damascene extending through a full thickness of said lower density layer, the relatively higher density layer having a thickness at least about ⅕ as thick as the relatively lower density layer, said relatively higher density layers comprising carbon and nitrogen; anda lowermost relatively higher density portion comprises an etch stop layer and an uppermost relatively higher density portion comprises a polish stop layer, said etch stop layer and said polish stop layer having a greater resistance to dielectric plasma etching compared to said relatively lower density portion;wherein, the opening in the lower density layer has third and fourth lateral dimensions that are relatively larger by between about 20 Angstroms and about 150 Angstroms compared to at least a first lateral dimension of the opening in the lowermost relatively higher density layer and a second lateral dimension of the opening in the uppermost relatively higher density layer, the relatively lower density layer comprising at least one pair of recessed steps, and undercut regions below the uppermost relatively higher density portion have equal lateral dimension;wherein said anchored conductive filling consists of a top and a bottom coplanar with a respective top and bottom of said dielectric layer. 2. The dual damascene of claim 1, further comprising a conductive region underlying the dielectric layer, wherein the opening comprises a dual damascene opening in closed communication with the underlying conductive region. 3. The dual damascene of claim 2, wherein the dual damascene opening comprises a via portion and a trench portion over the via portion, wherein the width of the trench portion is equal to or less than about 0.1 micron. 4. The dual damascene of claim 2, wherein the dual damascene opening comprises a via portion and a trench portion over the via portion, wherein the critical dimension of the via portion is less than about 0.007 square microns. 5. The dual damascene of claim 1, further comprising a conductive region underlying the dielectric layer, wherein the opening comprises a single damascene opening in closed communication with the underlying conductive region. 6. The dual damascene of claim 1, further comprising a device contact region underlying the dielectric layer, wherein the opening comprises a contact opening in closed communication with the underlying device contact region. 7. The dual damascene of claim 1, wherein the at least two relatively higher density portions comprises a lowermost portion of the dielectric layer. 8. The dual damascene of claim 7, wherein the lowermost portion of the dielectric layer is less than about 500 Angstroms in thickness. 9. The dual damascene of claim 1, wherein the at least two relatively higher density portions comprises an uppermost portion of the dielectric layer. 10. The dual damascene of claim 9, wherein the uppermost portion of the dielectric layer is less than about 1000 Angstroms in thickness. 11. The dual damascene of claim 1, wherein the relatively higher density portions have a dielectric constant between about 2.5 and about 5.0. 12. The dual damascene of claim 1, wherein the relatively lower density portion has a dielectric constant of less than or equal to about 2.7. 13. The dual damascene of claim 1, wherein the relatively lower density portion has a porosity of at least about 5%. 14. The dual damascene of claim 1, wherein the relatively lower density portion has a porosity larger than about 20%. 15. The dual damascene of claim 1, wherein the relatively lower density portion has a relatively higher rate of etching in a plasma etching process with a plasma etching chemistry of fluorocarbon (CxFy) chemicals compared to a rate of etching of the relatively higher density portion. 16. The dual damascene of claim 1, wherein the at least two relatively higher density portion comprises atomic species selected from the group consisting of carbon, nitrogen, and oxygen. 17. The dual damascene of claim 1, wherein the relatively lower density portion comprises a dielectric material selected from the group consisting of carbon doped silicon oxide and organo-silicates. 18. The dual damascene of claim 1, further comprising a barrier layer lining the opening, wherein the barrier layer comprises a refractory metal thereof having a melting temperature higher than 1200° C.