[특허]High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles

High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/20 B05D-005/12
출원번호	US-0765422 (2007-06-19)
등록번호	US-8372734 (2013-02-12)
발명자 / 주소	Van Duren, Jeroen K. J. Robinson, Matthew R. Sager, Brian M.
출원인 / 주소	Nanosolar, Inc
인용정보	피인용 횟수 : 7 인용 특허 : 80

초록 ▼

Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.

대표청구항 ▼

1. A method comprising: formulating a dispersion of particles wherein about 50% or more of the particles are flakes each containing at least one element from group IB, IIIA and/or VIA and having a non-spherical, planar shape with a jagged, irregular outline, wherein overall amounts of elements from group IB, IIIA and/or VIA contained in the dispersion are such that the dispersion has a desired stoichiometric ratio of the elements;coating a substrate with the dispersion to form a precursor layer; andprocessing the precursor layer in a suitable atmosphere to form a dense film;wherein at least one set of the particles in the dispersion are inter-metallic flake particles containing at least one group IB-IIIA inter-metallic alloy phase. 2. The process of claim 1 wherein at least one set of the particles in the dispersion is in the form of nanoglobules. 3. The process of claim 1 wherein at least one set of the particles in the dispersion are in the form of nanoglobules and contain at least one group IIIA element. 4. The process of claim 1 wherein at least one set of the particles in the dispersion is in the form of nanoglobules comprising of a group IIIA element in elemental form. 5. The process of claim 1 wherein the inter-metallic phase is not a terminal solid solution phase. 6. The process of claim 1 wherein the inter-metallic phase is not a solid solution phase. 7. The process of claim 1 wherein inter-metallic particles contribute less than about 50 molar percent of group IB elements found in all of the particles. 8. The process of claim 1 wherein inter-metallic particles contribute less than about 50 molar percent of group IIIA elements found in all of the particles. 9. The process of claim 1 wherein inter-metallic particles contribute less than about 50 molar percent of the group IB elements and less than about 50 molar percent of the group IIIA elements in the dispersion deposited on the substrate. 10. The process of claim 9 wherein the molar percent is based on a total molar mass of the elements in all particles present in the dispersion. 11. The process of claim 1 wherein inter-metallic particles contribute less than about 50 molar percent of the group IB elements and more than about 50 molar percent of the group IIIA elements in the dispersion deposited on the substrate. 12. The process of claim 1 wherein inter-metallic particles contribute more than about 50 molar percent of the group IB elements and less than about 50 molar percent of the group IIIA elements in the dispersion deposited on the substrate. 13. The process of claim 1 wherein at least some of the particles have a platelet shape. 14. The process of claim 1 wherein the coating step comprises depositing the dispersion on the substrate. 15. The process of claim 1 wherein the dispersion comprises an emulsion. 16. The process of claim 1 wherein the inter-metallic flake particles are a binary material. 17. The process of claim 1 wherein the inter-metallic flake particles are a ternary material. 18. A method comprising: formulating a dispersion of particles wherein about 50% or more of the particles are flakes each containing at least one element from group IB, IIIA and/or VIA and having a non-spherical, planar shape with a jagged, irregular outline, wherein overall amounts of elements from group IB, IIIA and/or VIA contained in the dispersion are such that the dispersion has a desired stoichiometric ratio of the elements;coating a substrate with the dispersion to form a precursor layer; andprocessing the precursor layer in a suitable atmosphere to form a dense film;wherein at least one set of the particles in the dispersion are inter-metallic flake particles containing at least one group IB-IIIA inter-metallic alloy phasewherein the flakes have an oxygen content of 5 wt % or less. 19. The process of claim 18 wherein at least one set of the particles in the dispersion is in the form of nanoglobules. 20. The process of claim 18 wherein at least one set of the particles in the dispersion are in the form of nanoglobules and contain at least one group IIIA element. 21. The process of claim 18 wherein at least one set of the particles in the dispersion is in the form of nanoglobules comprising of a group IIIA element in elemental form. 22. The process of claim 18 wherein the inter-metallic phase is not a terminal solid solution phase. 23. The process of claim 18 wherein the inter-metallic phase is not a solid solution phase. 24. The process of claim 18 wherein inter-metallic particles contribute less than about 50 molar percent of group IB elements found in all of the particles. 25. The process of claim 18 wherein inter-metallic particles contribute less than about 50 molar percent of group IIIA elements found in all of the particles. 26. The process of claim 18 wherein inter-metallic particles contribute less than about 50 molar percent of the group IB elements and less than about 50 molar percent of the group IIIA elements in the dispersion deposited on the substrate. 27. The process of claim 26 wherein the molar percent is based on a total molar mass of the elements in all particles present in the dispersion. 28. The process of claim 18 wherein inter-metallic particles contribute less than about 50 molar percent of the group IB elements and more than about 50 molar percent of the group IIIA elements in the dispersion deposited on the substrate. 29. The process of claim 18 wherein inter-metallic particles contribute more than about 50 molar percent of the group IB elements and less than about 50 molar percent of the group IIIA elements in the dispersion deposited on the substrate. 30. The process of claim 18 wherein at least some of the particles have a platelet shape. 31. The process of claim 18 wherein the depositing step comprises coating the substrate with the dispersion. 32. The process of claim 18 wherein the dispersion comprises an emulsion. 33. The process of claim 18 wherein the inter-metallic material is a binary material. 34. The process of claim 18 wherein the inter-metallic material is a ternary material. 35. A method comprising: formulating a dispersion of particles wherein about 50% or more of the particles are flakes each containing at least one element from group IB, IIIA and/or VIA and having a non-spherical, planar shape with a jagged, irregular outline, wherein overall amounts of elements from group IB, IIIA and/or VIA contained in the dispersion are such that the dispersion has a desired stoichiometric ratio of the elements;coating a substrate with the dispersion to form a precursor layer; andprocessing the precursor layer in a suitable atmosphere to form a dense film;wherein at least one set of the particles in the dispersion are inter-metallic flake particles containing at least one group IB-IIIA inter-metallic alloy phasewherein the flakes have a chalcogen-based shell. 36. The process of claim 35 wherein at least one set of the particles in the dispersion is in the form of nanoglobules. 37. The process of claim 35 wherein at least one set of the particles in the dispersion are in the form of nanoglobules and contain at least one group IIIA element. 38. The process of claim 35 wherein at least one set of the particles in the dispersion is in the form of nanoglobules comprising of a group IIIA element in elemental form. 39. The process of claim 35 wherein the inter-metallic phase is not a terminal solid solution phase. 40. The process of claim 35 wherein the inter-metallic phase is not a solid solution phase. 41. The process of claim 35 wherein inter-metallic particles contribute less than about 50 molar percent of group IB elements found in all of the particles. 42. The process of claim 35 wherein inter-metallic particles contribute less than about 50 molar percent of group IIIA elements found in all of the particles. 43. The process of claim 35 wherein inter-metallic particles contribute less than about 50 molar percent of the group IB elements and less than about 50 molar percent of the group IIIA elements in the dispersion deposited on the substrate. 44. The process of claim 35 wherein inter-metallic particles contribute less than about 50 molar percent of the group IB elements and more than about 50 molar percent of the group IIIA elements in the dispersion deposited on the substrate. 45. The process of claim 35 wherein inter-metallic particles contribute more than about 50 molar percent of the group IB elements and less than about 50 molar percent of the group IIIA elements in the dispersion deposited on the substrate. 46. The process of claim 35 wherein at least some of the particles have a platelet shape. 47. The process of claim 35 wherein the depositing step comprises coating the substrate with the dispersion. 48. The process of claim 35 wherein the dispersion comprises an emulsion. 49. The process of claim 35 wherein the inter-metallic material is a binary material. 50. The process of claim 35 wherein the inter-metallic material is a ternary material.

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles 원문보기

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High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles 원문보기

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