초록 ▼

An electronic device can include an organic active layer and an electrode. In one aspect, the electrode can further include a first layer that is conductive, and a second layer that is conductive. The second layer can include a defect extending at least partly through a thickness of the second condu

An electronic device can include an organic active layer and an electrode. In one aspect, the electrode can further include a first layer that is conductive, and a second layer that is conductive. The second layer can include a defect extending at least partly through a thickness of the second conductive layer. The electrode can also include a third layer lying within and substantially filling the defect, wherein each of the second and third layers includes a same metallic element. In another aspect, a process for forming an electronic device can include forming an organic active layer and forming a first layer that is conductive and is part of an electrode. The process can also include forming a second layer and exposing the second layer to a first plasma to form a first compound from the second layer.

대표청구항 ▼

1. A process for forming an electronic device comprising: forming an organic active layer;forming an electrode further comprising a first layer and a second layer, wherein: each of the first and second layers is conductive;the second layer is a last layer formed when forming the electrode; andthe se

1. A process for forming an electronic device comprising: forming an organic active layer;forming an electrode further comprising a first layer and a second layer, wherein: each of the first and second layers is conductive;the second layer is a last layer formed when forming the electrode; andthe second layer includes a defect extending at least partly through a thickness of the second layer; andexposing the second layer to a plasma to form a compound in the defect, wherein the compound is formed from a portion of the second layer. 2. The process of claim 1, wherein forming the organic active layer comprises continuously printing the organic active layer. 3. The process of claim 1, wherein forming the electrode further comprises forming each of the first and second layers of the electrode using a physical vapor deposition process. 4. The process of claim 1, wherein forming the electrode further comprises forming each of the first and second layers of the electrode using a same stencil mask. 5. The process of claim 1, wherein the plasma includes oxygen, nitrogen, fluorine, argon, helium, another noble gas, or any combination thereof. 6. The process of claim 5, wherein the plasma of the plasma treatment process is formed in a nitrogen-containing, oxygen-containing, fluorine-containing or any combination there of ambient. 7. A process for forming an electronic device comprising: forming an organic active layer;forming a first layer that is conductive and is part of an electrode;forming a second layer; andexposing the second layer to a first plasma to form a first compound from the second layer, wherein substantially all of the second layer is consumed when forming the first compound. 8. The process of claim 7, wherein the first plasma includes nitrogen, oxygen, fluorine, argon, helium, another noble gas, or any combination thereof. 9. The process of claim 7, wherein each of the first and second layers comprise a metal-containing material. 10. The process of claim 7 further comprising forming a third layer after forming the first layer and before forming the second layer, wherein the third layer is conductive and is part of the electrode. 11. The process of claim 10, further comprising forming a fourth layer after exposing the second layer to the first plasma. 12. The process of claim 11, wherein the fourth layer includes a metal-containing layer. 13. The process of claim 12, further comprising exposing the fourth layer to a second plasma to form a second compound from the fourth layer, wherein substantially all of the fourth layer is consumed when forming the second compound. 14. The process of claim 7, wherein forming the second layer comprises depositing a material including aluminum, tantalum, niobium, titanium, zirconium, hafnium, nickel, cobalt, chromium, molybdenum, tungsten, lanthanum, cerium, another rare earth metal, indium, tin, zinc, an alloy of titanium and zirconium, indium and tin, indium and zinc, aluminum and zinc or any combination thereof.