IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0840518
(2010-07-21)
|
등록번호 |
US-8384041
(2013-02-26)
|
발명자
/ 주소 |
- Tredwell, Timothy J.
- Heiler, Gregory N.
|
출원인 / 주소 |
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
4 |
초록
▼
Exemplary embodiments provide a radiographic array, flat detector panel and/or X-ray imaging apparatus including the same and/or methods for using the same or calibrating the same. Exemplary embodiments can reduce or address noise occurring in the optically sensitive pixels that is temporally not re
Exemplary embodiments provide a radiographic array, flat detector panel and/or X-ray imaging apparatus including the same and/or methods for using the same or calibrating the same. Exemplary embodiments can reduce or address noise occurring in the optically sensitive pixels that is temporally not related to image data detected by the optically sensitive pixels or dark reference frames detected by the optically sensitive pixels. Exemplary embodiments can include a capacitive element in a calibration pixel coupled between a row conductive line and a column conductive line in an imaging array.
대표청구항
▼
1. A radiographic sensing array comprising: a scintillator configured to emit light in response to reception of radiation;a plurality of optically sensitive pixels formed over a substrate arranged to form a light-sensitive area optically coupled to the scintillator, wherein each optically sensitive
1. A radiographic sensing array comprising: a scintillator configured to emit light in response to reception of radiation;a plurality of optically sensitive pixels formed over a substrate arranged to form a light-sensitive area optically coupled to the scintillator, wherein each optically sensitive pixel comprises:a scan line oriented along a first direction of the array;a data line oriented along a second direction of the array;a bias line;a switching element comprising a first electrode, a second electrode connected to the data line, and a control electrode connected to the scan line; anda photosensitive element including at least first and second electrodes, the first electrode electrically connected to the bias line and the second electrode electrically connected to the first electrode of the transistor; anda plurality of calibration pixels, wherein each calibration pixel comprises:a scan line;a data line;a capacitive element coupled between the data line and the scan line, where the calibration pixels do not include photosensitive elements. 2. The radiographic sensing array of claim 1, wherein the plurality of calibration pixels are disposed along at least the first direction of the array or the plurality of calibration pixels are disposed along at least the second direction of the substrate, wherein the first direction is a horizontal or scan direction and the second direction is a vertical or column direction of the array. 3. The radiographic sensing array of claim 1, wherein the plurality of calibration pixels are external to the plurality of optically sensitive pixels, where the capacitive element does not include at least a part of photosensitive element. 4. The radiographic sensing array of claim 1, wherein columns of optically sensitive pixels occupy a first length along the first direction and columns of the plurality of calibration pixels occupy a second length along the first direction, wherein the second length is less than the first length. 5. The radiographic sensing array of claim 4, wherein the second length is less than 85% of the first length, wherein the second length is less than 50% of the first length, wherein the second length is less than 25% of the first length, or wherein the second length is less than 10% of the first length. 6. The radiographic sensing array of claim 5, wherein the columns of the plurality of calibration pixels are interspersed among the columns of optically sensitive pixels, wherein the interspersed calibration pixels are provided for each read out integrated circuit (ROTC). 7. radiographic sensing array of claim 5, wherein the columns of the plurality of calibration pixels are along at least one edge of the columns of optically sensitive pixels. 8. The radiographic sensing array of claim 1, the capacitive elements comprise metal-insulator-metal type capacitors or metal-insulator-semiconductor type capacitors; a first metal electrode, a second metal electrode, an insulator and a Semiconductor; a transistor including a first electrode, a second electrode connected to the data line and a control electrode connected to the scan line; or the transistor including the first electrode and the second electrode connected to the data line, and the control electrode connected to the scan line. 9. The radiographic sensing array of claim 1, wherein each capacitive element comprises an overlap capacitor. 10. The radiographic sensing array of claim 1, wherein capacitance of the capacitive element between the scan line and a column line in the plurality of calibration pixels is configured to correspond to capacitance between the scan line and the drain line in the optically active pixels, or wherein total overlap capacitance between the scan line and the column line in the calibration pixels is about equal to total capacitance between the scan line and the column line in the optically sensitive pixels. 11. The radiographic sensing array of claim 1, wherein capacitance of the capacitive element between the scan line and a column line in the plurality of calibration pixels is greater than the capacitance between the scan line and the column line in the optically active pixels by a scale factor α or wherein total overlap capacitance between the scan line and the column line in the calibration pixels is greater than total capacitance between the scan line and the column line in the optically sensitive pixels by the scale factor α. 12. The radiographic sensing array of claim 11, wherein the value of the scale factor α is 2, a binary multiple, an integer multiple or a fractional multiple. 13. The radiographic sensing array of claim 1, wherein the plurality of calibration pixels further comprises: a plurality of thin-film-transistors, wherein each thin-film-transistor comprises a first electrode and a second electrode connected to the data line, and a control electrode connected to the scan line, wherein the thin-film-transistor in the calibration pixels is substantially identical to the transistor in the optically sensitive pixels. 14. The radiographic sensing array of claim 1, wherein the capacitive elements comprise capacitors, and wherein each data line is vertically oriented over each entire corresponding capacitor. 15. The radiographic sensing array of claim 1, wherein the plurality of calibration pixels are configured to compensate noise occurring in the optically sensitive pixels that is temporally not related to timing of image data read out by the optically sensitive pixels or dark reference frames detected by the optically sensitive pixels. 16. The radiographic sensing array of claim 15, wherein the noise occurring in the optically sensitive pixels that is temporally not related to data readout from the optically sensitive pixels comprises at least one of power supply noise and electro-magnetic interference noise generated through the data lines, power supply noise and electro-magnetic interference noise generated through the bias lines, reference power supply noise and noise charge on a feedback capacitor of a charge amplifier, electro-magnetic interference noise generated through the scan lines or feedthrough of a gate line row select clock. 17. The radiographic sensing array of claim 15, wherein the noise occurring in the optically sensitive pixels that is temporally not related to data readout from the optically sensitive pixels comprises all of power supply noise and electro-magnetic interference noise generated through the data lines, reference power supply noise and noise charge on a feedback capacitor of a charge amplifier or feedthrough of the gate line row select clock, wherein the capacitive elements comprise metal-insulator-metal type capacitors, metal-insulator-semiconductor type capacitors, or a transistor including a first electrode and a second electrode connected to the data line, and a control electrode connected to the scan line. 18. The radiographic sensing array of claim 1, wherein each of the plurality of calibration pixels further comprises: the bias line;and wherein the capacitive element comprises, a transistor including a first electrode, a second electrode connected to the data line, and a control electrode connected to the scan line; anda capacitor comprising a first electrode, an insulator and a second electrode, the first electrode being electrically connected to the bias line and the second electrode being electrically connected to the first electrode of the transistor.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.