Method for calibrating a pyrometer, method for determining the temperature of a semiconducting wafer and system for determining the temperature of a semiconducting wafer
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A method for calibrating a pyrometer a temperature of a calibration sample is determined from the ratio of a first reflectance and a second reflectance and the pyrometer is calibrated by assigning the determined temperature of the calibration sample with a thermal radiation signal measured by the py
A method for calibrating a pyrometer a temperature of a calibration sample is determined from the ratio of a first reflectance and a second reflectance and the pyrometer is calibrated by assigning the determined temperature of the calibration sample with a thermal radiation signal measured by the pyrometer.
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1. Method for calibrating a pyrometer (1) adapted to intercept and measure thermal radiation, wherein at least one measured thermal radiation signal is assigned with a temperature value, the method comprising: providing a calibration sample (12), wherein the calibration sample (12) comprises a semic
1. Method for calibrating a pyrometer (1) adapted to intercept and measure thermal radiation, wherein at least one measured thermal radiation signal is assigned with a temperature value, the method comprising: providing a calibration sample (12), wherein the calibration sample (12) comprises a semiconducting wafer (2) and a transparent calibration layer (13) disposed on the semiconducting wafer (2),heating the calibration sample (12),during the heating process: irradiating a first optical radiation having a first wavelength onto the calibration sample (12), measuring a first reflection signal resulting from reflection of the first radiation on the calibration sample (12), and determining a first reflectance of the calibration sample (12) for the first wavelength from the measured first reflection signal,irradiating a second optical radiation having a second wavelength onto the calibration sample (12), the first wavelength and the second wavelength being different from each other, measuring a second reflection signal resulting from reflection of the second radiation on the calibration sample (12), and determining a second reflectance of the calibration sample (12) for the second wavelength from the measured second reflection signal, andmeasuring, by the pyrometer (1), a thermal radiation signal received from the calibration sample (12),wherein a temperature of the calibration sample (12) is determined from the ratio of the first reflectance and the second reflectance and wherein the pyrometer (1) is calibrated by assigning the determined temperature of the calibration sample (12) with the thermal radiation signal measured by the pyrometer (1). 2. The method of claim 1, wherein the steps of irradiating the first optical radiation,measuring the first reflection signal,irradiating the second optical radiation,measuring a second reflection signal, andmeasuring the thermal radiation signal,are simultaneously carried out. 3. The method of claim 2, wherein the calibration sample (12) is continuously heated, and/or wherein the calibration sample (12) is heated with a temperature gradient ranging between 0.1K/min and 10K/min and/or the calibration sample (12) is continuously heated up to a temperature between 500° C. and 1200° C. 4. The method of claim 1, wherein the transparent calibration layer (13) comprises an optical transparency for the first optical radiation and the second optical radiation of 0.5 or more and/or wherein the transparent calibration layer (13) comprises a thickness ranging between 1 μm and 5 μm and/or wherein the transparent calibration layer (13) consists of gallium nitride. 5. The method of claim 4, wherein the calibration sample (12) further comprises a transparent protection layer (14), the transparent protection layer (14) being disposed on the transparent calibration layer (13). 6. The method of claim 1, wherein the first optical radiation and the second optical radiation have a central wavelength ranging between 380 nm and 1300 nm, and/or wherein the first optical radiation and the second optical radiation comprise a full width at half maximum (FWHM) ranging between 0.1 nm and 20 nm, and/or wherein the absolute value of the difference between the wavelength of the first optical radiation and the wavelength of the second optical radiation ranges between 5 nm and 600 nm. 7. The method of claim 1, wherein the first optical radiation and the second optical radiation are perpendicularly irradiated onto the calibration sample (12) with respect to the surface of the calibration sample (12). 8. The method of claim 1, further comprising: continuously heating the calibration sample (12) for a predetermined temperature range, and during the continuous heating process:continuously measuring the thermal radiation signal, continuously irradiating the first optical radiation having the first wavelength onto the calibration sample (12), continuously measuring the first reflection signal and continuously determining first reflectance values of the calibration sample (12),wherein a second temperature of the calibration sample (12) is determined from a minimum of the reflectance values and wherein the second temperature is assigned with the measured thermal radiation signal which was measured during the time at which the minimum reflectance value was measured, andwherein the second temperature determined from the minimum of the reflectance values is compared with the first temperature determined from the ratio of the first reflectance and the second reflectance. 9. The method according to claim 1, further comprising a verification of the calibration of the pyrometer (1), the verification comprising: replacing the calibration sample (12) or replacing an integrating sphere (8) by a non-coated semiconducting wafer (2),heating the non-coated semiconducting wafer (2) to a predetermined temperature,measuring, by the pyrometer (1), a second thermal radiation signal of a third wavelength of the non-coated semiconducting wafer (2),measuring, by the pyrometer (1), a third thermal radiation signal of a fourth wavelength of the non-coated semiconducting wafer (2), the third wavelength and the fourth wavelength being different from each other,determining a first temperature of the non-coated semiconducting wafer (2) from the ratio of the second thermal radiation signal and the third thermal radiation signal, andwherein the calibration of the pyrometer (1) is verified by assigning the determined first temperature of the non-coated semiconducting wafer (2) with at least one of the second thermal radiation signal measured by the pyrometer (1) and the third thermal radiation signal measured by the pyrometer (1), and comparing the assigned first temperature with the previously assigned temperature. 10. Method for determining the temperature of a semiconducting wafer (2) which is located within a processing chamber (10) by using a pyrometer (1), the method comprising: calibrating the pyrometer (1),measuring a thermal radiation which is emitted by the semiconducting wafer (2) due to its temperature by using the pyrometer (1),wherein the pyrometer (1) is located outside the processing chamber (10) and the thermal radiation is received by the pyrometer (1) after passing through a window (11) of the processing chamber (10), anddetermining the temperature of the semiconducting wafer (2) from the measured thermal radiation,wherein the pyrometer (1) is calibrated according to the method of claim 1. 11. The method according to claim 10, wherein a surface area of the semiconducting wafer (2) corresponds with the surface area of an opening (10) of the integrating sphere (8) and/or wherein the surface area of the semiconducting wafer (2) corresponds with the surface area of the calibration sample (12). 12. System adapted for determining the temperature of a semiconducting wafer (2) according to claim 10, the system comprising: the calibration sample (12), wherein the calibration sample (12) comprises the semiconducting wafer (2) and the transparent calibration layer (13) disposed on the semiconducting wafer (2), the pyrometer (1) adapted to intercept and measure thermal radiation, and adapted to measure the first thermal radiation signal received from the calibration sample (12), and adapted to measure the thermal radiation which is emitted by the semiconducting wafer (2) due to its temperature, a first light source and first optical detector, adapted to irradiate the first optical radiation having the first wavelength onto the calibration sample (12), measuring the first reflection signal resulting from reflection of the first radiation on the calibration sample (12), anddetermining the first reflectance of the calibration sample (12) for the first wavelength from the measured first reflection signal,a second light source and a second optical detector, adapted to irradiate the second optical radiation having the second wavelength different from the first wavelength onto the calibration sample (12),measuring the second reflection signal resulting from reflection of the second radiation on the calibration sample (12), and determining the second reflectance of the calibration sample (12) for the second wavelength from the measured first reflection signal,wherein the system further comprises a control unit adapted to calibrate the pyrometer. 13. The system according to claim 12, wherein the first optical detector is used as the detector of the pyrometer (1) or wherein the first optical detector is used as a first detector of the pyrometer (1) and the second optical detector is used as a second detector of the pyrometer (1). 14. The system according to claim 13, wherein the first optical detector is alternately switched in a first mode for measuring the thermal radiation which is emitted by the semiconducting wafer (2) due to its temperature and in a second mode for measuring the second reflection signal resulting from reflection of the second radiation on the calibration sample (12) and/or wherein the second optical detector is alternately switched in a first mode for measuring the thermal radiation which is emitted by the semiconducting wafer (2) due to its temperature and in a second mode for measuring the second reflection signal resulting from reflection of the second radiation on the calibration sample (12). 15. Method for calibrating a pyrometer (1) adapted to intercept and measure thermal radiation, wherein at least one measured thermal radiation signal is assigned with a temperature value, the method comprising: providing an integrating sphere (8),irradiating the integrating sphere (8) with radiation corresponding to a predetermined temperature and to a wavelength detection characteristics of the pyrometer,wherein the radiation which is irradiated into the integrating sphere (8) is calibrated by comparison of a flux density leaving through a window plate (10) with the emitted light of a calibrated black-body source and stabilized according to the predetermined radiation-temperature using a detector (8) which is located inside the integrating sphere (8),measuring, by the pyrometer (1), a thermal radiation signal of the integrating sphere (8),determining an apparent temperature of the integrating sphere (8) from measured thermal radiation signal of the integrating sphere (8), andwherein the pyrometer (1) is calibrated by assigning the pre-determined radiation temperature of the integrating sphere (8) with the thermal radiation signal measured by the pyrometer (1).
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