초록 ▼

A semiconductor device in which degradation due to permeation of water and oxygen can be limited, e.g., a light emitting device having an organic light emitting device (OLED) formed on a plastic substrate, and a liquid crystal display using a plastic substrate. A layer to be debonded, containing ele

A semiconductor device in which degradation due to permeation of water and oxygen can be limited, e.g., a light emitting device having an organic light emitting device (OLED) formed on a plastic substrate, and a liquid crystal display using a plastic substrate. A layer to be debonded, containing elements, is formed on a substrate, bonded to a supporting member, and debonded from the substrate. A thin film is thereafter formed on the debonded layer. The debonded layer with the thin film is adhered to a transfer member. Cracks caused in the debonded layer at the time of debonding are thereby repaired. As the thin film in contact with the debonded layer, a film having thermal conductivity, e.g., film of aluminum nitride or aluminum nitroxide is used. This film dissipates heat from the elements and has the effect of preventing deformation and change in quality of the transfer member, e.g., a plastic substrate.

대표청구항 ▼

1. A semiconductor device comprising: a first substrate;a first thermal conductivity film over the first substrate;a thin film transistor over the first thermal conductivity film;a second thermal conductivity film over the thin film transistor;a light-emitting element disposed between the thin film

1. A semiconductor device comprising: a first substrate;a first thermal conductivity film over the first substrate;a thin film transistor over the first thermal conductivity film;a second thermal conductivity film over the thin film transistor;a light-emitting element disposed between the thin film transistor and the second thermal conductivity film; anda second substrate over the second thermal conductivity film,wherein each of the first thermal conductivity film and the second thermal conductivity film includes aluminum nitride. 2. A semiconductor device according to claim 1, further comprising an oxide layer disposed between the first thermal conductivity film and the thin film transistor. 3. A semiconductor device according to claim 1, wherein each of the first thermal conductivity film and the second thermal conductivity film has a light-transmitting property. 4. A semiconductor device according to claim 1, wherein the thin film transistor includes a semiconductor layer and a gate electrode,wherein the semiconductor layer includes a first impurity region, a second impurity region, a third impurity region, and a channel formation region,wherein the first impurity region and the second impurity region are not overlapped with the gate electrode,wherein the third impurity region and the channel formation region are overlapped with the gate electrode, andwherein the second impurity region and the third impurity region are disposed between the first impurity region and the channel formation region. 5. A semiconductor device according to claim 1, wherein each of the first substrate and the second substrate is a plastic substrate. 6. A semiconductor device according to claim 1, further comprising a first bonding layer between the first substrate and the first thermal conductivity film, and a second bonding layer between the second thermal conductivity film and the second substrate. 7. A semiconductor device according to claim 6, wherein the first bonding layer is in contact with the first substrate and the first thermal conductivity film, andwherein the second bonding layer is in contact with the second substrate and the second thermal conductivity film. 8. A semiconductor device comprising: a first substrate;a first thermal conductivity film over a first bonding layer;a thin film transistor over the first thermal conductivity film;a second thermal conductivity film over the thin film transistor;light-emitting element disposed between the thin film transistor and the second thermal conductivity film; anda second substrate over the second thermal conductivity film,wherein each of the first thermal conductivity film and the second thermal conductivity film includes aluminum oxide. 9. A semiconductor device according to claim 8, further comprising an oxide layer disposed between the first thermal conductivity film and the thin film transistor. 10. A semiconductor device according to claim 8, wherein each of the first thermal conductivity film and the second thermal conductivity film has a light-transmitting property. 11. A semiconductor device according to claim 8, wherein the thin film transistor includes a semiconductor layer and a gate electrode,wherein the semiconductor layer includes a first impurity region, a second impurity region, a third impurity region, and a channel formation region,wherein the first impurity region and the second impurity region are not overlapped with the gate electrode,wherein the third impurity region and the channel formation region are overlapped with the gate electrode, andwherein the second impurity region and the third impurity region are disposed between the first impurity region and the channel formation region. 12. A semiconductor device according to claim 8, wherein each of the first substrate and the second substrate is a plastic substrate. 13. A semiconductor device according to claim 8, wherein the first bonding layer is disposed between the first substrate and the first thermal conductivity film, and a second bonding layer is disposed between the second thermal conductivity film and the second substrate. 14. A semiconductor device according to claim 13, wherein the first bonding layer is in contact with the first substrate and the first thermal conductivity film, andwherein the second bonding layer is in contact with the second substrate and the second thermal conductivity film. 15. A semiconductor device comprising: a first substrate;a first thermal conductivity film over a first bonding layer;a thin film transistor over the first thermal conductivity film;a second thermal conductivity film over the thin film transistor;a light-emitting element disposed between the thin film transistor and the second thermal conductivity film; anda second substrate over the second thermal conductivity film,wherein each of the first thermal conductivity film and the second thermal conductivity film includes aluminum nitride oxide. 16. A semiconductor device according to claim 15, further comprising an oxide layer disposed between the first thermal conductivity film and the thin film transistor. 17. A semiconductor device according to claim 14, wherein each of the first thermal conductivity film and the second thermal conductivity film has a light-transmitting property. 18. A semiconductor device according to claim 14, wherein the thin film transistor includes a semiconductor layer and a gate electrode,wherein the semiconductor layer includes a first impurity region, a second impurity region, a third impurity region, and a channel formation region,wherein the first impurity region and the second impurity region are not overlapped with the gate electrode,wherein the third impurity region and the channel formation region are overlapped with the gate electrode, andwherein the second impurity region and the third impurity region are disposed between the first impurity region and the channel formation region. 19. A semiconductor device according to claim 15, wherein each of the first substrate and the second substrate is a plastic substrate. 20. A semiconductor device according to claim 15, wherein the first bonding layer is disposed between the first substrate and the first thermal conductivity film, and a second bonding layer is disposed between the second thermal conductivity film and the second substrate. 21. A semiconductor device according to claim 20, wherein the first bonding layer is in contact with the first substrate and the first thermal conductivity film, andwherein the second bonding layer is in contact with the second substrate and the second thermal conductivity film. 22. A semiconductor device comprising: a transfer member;a supporting member;a first thermal conductivity film;a second thermal conductivity film;a thin film transistor disposed between the transfer member and the supporting member, and disposed between the first thermal conductivity film and the second thermal conductivity film; anda light-emitting element disposed between the thin film transistor and the supporting member,wherein each of the first thermal conductivity film and the second thermal conductivity film includes aluminum nitride. 23. A semiconductor device according to claim 22, further comprising a first bonding layer disposed between the transfer member and the thin film transistor, and a second bonding layer disposed between the supporting member and the thin film transistor. 24. A semiconductor device according to claim 22, wherein each of the first thermal conductivity film and the second thermal conductivity film has a light-transmitting property. 25. A semiconductor device according to claim 22, wherein each of the first thermal conductivity film and the second thermal conductivity film includes metal. 26. A semiconductor device according to claim 22, further comprising an oxide layer disposed between the transfer member and the thin film transistor, and disposed between the first thermal conductivity film and the thin film transistor. 27. A semiconductor device according to claim 22, wherein each of the transfer member and the supporting member includes plastic. 28. A semiconductor device comprising: a transfer member;a supporting member;a first thermal conductivity film;a second thermal conductivity film;a thin film transistor disposed between the transfer member and the supporting member, and disposed between the first thermal conductivity film and the second thermal conductivity film; anda light-emitting element disposed between the thin film transistor and the supporting member,wherein each of the first thermal conductivity film and the second thermal conductivity film includes aluminum oxide. 29. A semiconductor device according to claim 28, further comprising a first bonding layer disposed between the transfer member and the thin film transistor, and a second bonding layer disposed between the supporting member and the thin film transistor. 30. A semiconductor device according to claim 28, wherein each of the first thermal conductivity film and the second thermal conductivity film has a light-transmitting property. 31. A semiconductor device according to claim 28, wherein each of the first thermal conductivity film and the second thermal conductivity film includes metal. 32. A semiconductor device according to claim 28, further comprising an oxide layer disposed between the transfer member and the thin film transistor, and disposed between the first thermal conductivity film and the thin film transistor. 33. A semiconductor device according to claim 28, wherein each of the transfer member and the supporting member includes plastic. 34. A semiconductor device comprising: a transfer member;a supporting member;a first thermal conductivity film;a second thermal conductivity film;a thin film transistor disposed between the transfer member and the supporting member, and disposed between the first thermal conductivity film and the second thermal conductivity film; anda light-emitting element disposed between the thin film transistor and the supporting member,wherein each of the first thermal conductivity film and the second thermal conductivity film includes aluminum nitride oxide. 35. A semiconductor device according to claim 34, further comprising a first bonding layer disposed between the transfer member and the thin film transistor, and a second bonding layer disposed between the supporting member and the thin film transistor. 36. A semiconductor device according to claim 34, wherein each of the first thermal conductivity film and the second thermal conductivity film has a light-transmitting property. 37. A semiconductor device according to claim 34, wherein each of the first thermal conductivity film and the second thermal conductivity film includes metal. 38. A semiconductor device according to claim 34, further comprising an oxide layer disposed between the transfer member and the thin film transistor, and disposed between the first thermal conductivity film and the thin film transistor. 39. A semiconductor device according to claim 34, wherein each of the transfer member and the supporting member includes plastic. 40. A semiconductor device comprising: a first substrate;a first thermal conductivity film over the first substrate;a thin film transistor over the first thermal conductivity film;a second thermal conductivity film over the thin film transistor;a liquid crystal layer disposed between the thin film transistor and the second thermal conductivity film; anda second substrate over the second thermal conductivity film,wherein each of the first thermal conductivity film and the second thermal conductivity film includes aluminum nitride. 41. A semiconductor device comprising: a first substrate;a first thermal conductivity film over a first bonding layer;a thin film transistor over the first thermal conductivity film;a second thermal conductivity film over the thin film transistor;a liquid crystal layer disposed between the thin film transistor and the second thermal conductivity film; anda second substrate over the second thermal conductivity film,wherein each of the first thermal conductivity film and the second thermal conductivity film includes aluminum oxide. 42. A semiconductor device comprising: a first substrate;a first thermal conductivity film over a first bonding layer;a thin film transistor over the first thermal conductivity film;a second thermal conductivity film over the thin film transistor;a liquid crystal layer disposed between the thin film transistor and the second thermal conductivity film; anda second substrate over the second thermal conductivity film,wherein each of the first thermal conductivity film and the second thermal conductivity film includes aluminum nitride oxide.